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Results: 51-59/59
Authors:
FUJISAWA T
BEVER T
HIRAYAMA Y
TARUCHA S
Citation: T. Fujisawa et al., NANOSTRUCTURE FABRICATION AND THE SCIENCE USING FOCUSED ION-BEAMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3755-3759
Authors:
TOKURA Y
TARUCHA S
Citation: Y. Tokura et S. Tarucha, EXCHANGE INTERACTION IN QUANTUM-WIRE SUBBANDS, Physical review. B, Condensed matter, 50(15), 1994, pp. 10981-10989
Authors:
TOKURA Y
TARUCHA S
Citation: Y. Tokura et S. Tarucha, EXCHANGE INTERACTION IN QUANTUM-WIRE SUBBANDS, Physical review. B, Condensed matter, 50(15), 1994, pp. 10981-10989
Authors:
TARUCHA S
HONDA T
SAKU T
TOKURA Y
Citation: S. Tarucha et al., CHARGING EFFECTS IN SMALL-AREA MODULATION-DOPED DOUBLE-BARRIER HETEROSTRUCTURES, Surface science, 305(1-3), 1994, pp. 547-552
Authors:
BEVER T
HIRAYAMA Y
TARUCHA S
Citation: T. Bever et al., ENHANCED COLLIMATION IN NARROW CHANNELS FABRICATED BY FOCUSED-ION-BEAM IMPLANTATION, Journal of applied physics, 75(5), 1994, pp. 2477-2480
Authors:
BEVER T
HIRAYAMA Y
TARUCHA S
Citation: T. Bever et al., STRONG NEGATIVE TRANSCONDUCTANCE IN IN-PLANE-GATE TRANSISTORS WRITTENBY FOCUSED-ION-BEAM IMPLANTATION, Journal of applied physics, 75(11), 1994, pp. 7573-7575
Authors:
FUJISAWA T
HIRAYAMA Y
TARUCHA S
Citation: T. Fujisawa et al., ALGAAS INGAAS/GAAS SINGLE-ELECTRON TRANSISTORS FABRICATED BY GA FOCUSED ION-BEAM IMPLANTATION/, Applied physics letters, 64(17), 1994, pp. 2250-2252
Authors:
HIRAYAMA Y
TARUCHA S
Citation: Y. Hirayama et S. Tarucha, HIGH-TEMPERATURE BALLISTIC TRANSPORT OBSERVED IN ALGAAS INGAAS/GAAS SMALL 4-TERMINAL STRUCTURES/, Applied physics letters, 63(17), 1993, pp. 2366-2368
Authors:
FUJISAWA T
SAKU T
HIRAYAMA Y
TARUCHA S
Citation: T. Fujisawa et al., SUB-MU-M WIDE CHANNELS WITH SURFACE-POTENTIAL COMPENSATED BY FOCUSED SI ION-BEAM IMPLANTATION, Applied physics letters, 63(1), 1993, pp. 51-53