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Results:
1-24
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Results: 24
Authors:
IACONA F
RAINERI V
LAVIA F
TERRASI A
RIMINI E
Citation: F. Iacona et al., ARSENIC REDISTRIBUTION AT THE SIO2 SI INTERFACE DURING OXIDATION OF IMPLANTED SILICON/, Physical review. B, Condensed matter, 58(16), 1998, pp. 10990-10999
Authors:
IVANEO J
HORVATH ZJ
VANTUYEN V
COLUZZA C
ALMEIDA J
TERRASI A
PECZ B
VINCZE G
MARGARITONDO G
Citation: J. Ivaneo et al., ELECTRICAL CHARACTERIZATION OF AU SIOX/N-GAAS JUNCTIONS/, Solid-state electronics, 42(2), 1998, pp. 229-233
Authors:
LOMBARDO S
CRUPI F
LAMAGNA A
SPINELLA C
TERRASI A
LAMANTIA A
NERI B
Citation: S. Lombardo et al., ELECTRICAL AND THERMAL TRANSIENT DURING DIELECTRIC-BREAKDOWN OF THIN OXIDES IN METAL-SIO2-SILICON CAPACITORS, Journal of applied physics, 84(1), 1998, pp. 472-479
Authors:
TERRASI A
RIMINI E
RAINERI V
IACONA F
LAVIA F
COLONNA S
MOBILIO S
Citation: A. Terrasi et al., PRECIPITATION OF AS IN THERMALLY OXIDIZED ION-IMPLANTED SI CRYSTALS, Applied physics letters, 73(18), 1998, pp. 2633-2635
Authors:
TERRASI A
LAVIA F
DACAPITO F
MOBILIO S
Citation: A. Terrasi et al., EXAFS INVESTIGATION OF CO SITES IN COSI2 FILM GROWN BY ION-BEAM-ASSISTED DEPOSITION, Microelectronic engineering, 37-8(1-4), 1997, pp. 491-497
Authors:
TERRASI A
MARSI M
BERGER H
MARGARITONDO G
KELLEY RJ
ONELLION M
Citation: A. Terrasi et al., TEMPERATURE-DEPENDENCE OF ELECTRONIC STATES IN (TASE4)(2)I - REPLY, Physical review. B, Condensed matter, 56(19), 1997, pp. 12647-12648
Authors:
ALMEIDA J
COLUZZA C
DELLORTO T
MARGARITONDO G
TERRASI A
IVANCO J
Citation: J. Almeida et al., AU GAAS(100) INTERFACE SCHOTTKY-BARRIER MODIFICATION BY A SILICON-NITRIDE INTRALAYER/, Journal of applied physics, 81(1), 1997, pp. 292-296
Authors:
TERRASI A
FRANZO G
COFFA S
PRIOLO F
DACAPITO F
MOBILIO S
Citation: A. Terrasi et al., EVOLUTION OF THE LOCAL ENVIRONMENT AROUND ER UPON THERMAL ANNEALING IN ER AND O CO-IMPLANTED SI, Applied physics letters, 70(13), 1997, pp. 1712-1714
Authors:
FANFONI M
GOLETTI C
CHIARADIA P
NG W
CERRINA F
HWU Y
TERRASI A
MARGARITONDO G
Citation: M. Fanfoni et al., SCHOTTKY-BARRIER AT THE AU GAP(110) INTERFACE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2433-2436
Authors:
TERRASI A
MARSI M
BERGER H
GAUTHIER F
FORRO L
MARGARITONDO G
KELLEY RJ
ONELLION M
Citation: A. Terrasi et al., INCOMPLETE CHARGE-DENSITY-WAVE GAP OPENING IN ORTHORHOMBIC MO4O11, Zeitschrift fur Physik. B, Condensed matter, 100(4), 1996, pp. 493-496
Authors:
BERGER H
LAROSA S
TERRASI A
MARSI M
COLLINS I
KELLEY RJ
QUITMANN C
MA JA
KENDZIORA C
SKELTON E
ONELLION M
MARGARITONDO G
Citation: H. Berger et al., PROGRESS IN UNDERSTANDING VUV PHOTOEMISSION IN LOW-DIMENSIONALITY SYSTEMS, Journal of electron spectroscopy and related phenomena, 78, 1996, pp. 431-436
Authors:
TERRASI A
ALMEIDA J
COLUZZA C
MARGARITONDO G
Citation: A. Terrasi et al., SILICON-OXIDE THIN-FILMS OBTAINED BY AR-TEMPERATURE( BOMBARDMENT OF SI(100) IN OXYGEN ATMOSPHERE AT ROOM), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 416-419
Authors:
TERRASI A
RAVESI S
MARCELLINO C
SPINELLA C
PANNITTERI S
Citation: A. Terrasi et al., ION-BEAM-ASSISTED DEPOSITION OF AL FILMS ON SI, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2827-2831
Authors:
TERRASI A
MARSI M
BERGER H
MARGARITONDO G
KELLEY RJ
ONELLION M
Citation: A. Terrasi et al., TEMPERATURE-DEPENDENCE OF ELECTRONIC STATES IN (TASE4)(2)I, Physical review. B, Condensed matter, 52(8), 1995, pp. 5592-5597
Authors:
TERRASI A
COLUZZA C
MARGARITONDO G
Citation: A. Terrasi et al., AR- ROOM-TEMPERATURE OXIDE FORMATION STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY( BOMBARDMENT OF SI(100) IN OXYGEN ATMOSPHERE ), Journal of applied physics, 78(6), 1995, pp. 3820-3823
Authors:
TERRASI A
RAVESI S
GRIMALDI MG
SPINELLA C
Citation: A. Terrasi et al., ION-BEAM-ASSISTED GROWTH OF BETA-FESI2, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 289-294
Authors:
GRIMALDI MG
FRANZO G
RAVESI S
TERRASI A
SPINELLA C
LAMANTIA A
Citation: Mg. Grimaldi et al., FORMATION OF EPITAXIAL GAMMA-FESI(2) AND BETA-FESI(2) LAYERS ON (111)SI, Applied surface science, 74(1), 1994, pp. 19-26
Authors:
DELLORTO T
ALMEIDA J
TERRASI A
MARSI M
COLUZZA C
MARGARITONDO G
PERFETTI P
Citation: T. Dellorto et al., ANOMALOUS AU SI BARRIER MODIFICATION BY A CAF2 INTRALAYER/, Physical review. B, Condensed matter, 50(24), 1994, pp. 18189-18193
Authors:
ARMELAO L
TERRASI A
BOARO M
RAVESI S
GRANOZZI G
Citation: L. Armelao et al., X-RAY PHOTOELECTRON-SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY OF BETA-FESI2 FILMS GROWN BY ION-BEAM-ASSISTED DEPOSITION, Surface and interface analysis, 22(1-12), 1994, pp. 36-40
Authors:
TERRASI A
RAVESI S
SPINELLA C
GRIMALDI MG
LAMANTIA A
Citation: A. Terrasi et al., MORPHOLOGICAL AND STRUCTURAL STUDIES OF BETA-FESI2 FILMS GROWN BY ION-BEAM-ASSISTED DEPOSITION, Thin solid films, 241(1-2), 1994, pp. 188-191
Authors:
RAVESI S
TERRASI A
TORRISI L
FOTI G
Citation: S. Ravesi et al., ELECTRONIC-STRUCTURE OF 0.5 KEV AR+ IRRADIATED GRAPHITE, Radiation effects and defects in solids, 127(2), 1993, pp. 137-145
Authors:
LAVIA F
RAVESI S
TERRASI A
SPINELLA C
Citation: F. Lavia et al., FORMATION AND CHARACTERIZATION OF SI COSI2,/SI EPITAXIAL HETEROSTRUCTURES/, Applied surface science, 73, 1993, pp. 135-140
Authors:
RAVESI S
TERRASI A
LAMANTIA A
Citation: S. Ravesi et al., SURFACE-MORPHOLOGY AND EPITAXY OF BETA-FESI2 OBTAINED BY ION-BEAM-ASSISTED GROWTH, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1371-1375
Authors:
TERRASI A
RAVESI S
GRIMALDI MG
Citation: A. Terrasi et al., EPITAXY ENHANCEMENT OF BETA-FESI2 GROWN BY ION-BEAM ASSISTED DEPOSITION, Applied physics letters, 62(17), 1993, pp. 2102-2104
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1-24
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