ACNP - Italian Periodicals Catalogue

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Results: 1-14 |

Results: 14

PHOTOLUMINESCENCE MEASUREMENTS OF GAAS GROWN BY LIQUID-PHASE EPITAXY FROM GA-BI SOLUTION

Authors: CIORGA M BRYJA L MISIEWICZ J PASZKIEWICZ R PANEK M PASZKIEWICZ B TLACZALA M

Citation: M. Ciorga et al., PHOTOLUMINESCENCE MEASUREMENTS OF GAAS GROWN BY LIQUID-PHASE EPITAXY FROM GA-BI SOLUTION, Advanced materials for optics and electronics, 8(1), 1998, pp. 9-12

Authors: LESZCZYNSKI M PRYSTAWKO P SLIWINSKI A SUSKI T LITWINSTASZEWSKA E POROWSKI S PASZKIEWICZ R TLACZALA M BEAUMONT B GIBART P BARSKI A LANGER R KNAP W FRAYSSINET E

Citation: M. Leszczynski et al., POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 94(3), 1998, pp. 427-430

STUDY OF THE NATURE OF LIGHT-HOLE EXCITONIC TRANSITIONS IN INGAAS GAAS QUANTUM-WELL/

Authors: SEK G MISIEWICZ J RADZIEWICZ D TLACZALA M PANEK M KORBUTOWICZ R

Citation: G. Sek et al., STUDY OF THE NATURE OF LIGHT-HOLE EXCITONIC TRANSITIONS IN INGAAS GAAS QUANTUM-WELL/, Vacuum, 50(1-2), 1998, pp. 199-201

GROWTH AND CHARACTERIZATION OF GAN EPITAXIAL LAYERS

Authors: PASZKIEWICZ R KORBUTOWICZ R RADZIEWICZ D PANEK M PASZKIEWICZ B KOZLOWSKI J BORATYNSKI B TLACZALA M NOVIKOV SV

Citation: R. Paszkiewicz et al., GROWTH AND CHARACTERIZATION OF GAN EPITAXIAL LAYERS, Vacuum, 50(1-2), 1998, pp. 211-214

CRITICAL LAYER THICKNESS OF INGAAS ON GAAS EXAMINED BY PHOTOREFLECTANCE SPECTROSCOPY

Authors: SEK G MISIEWICZ J RADZIEWICZ D TLACZALA M PANEK M KORBUTOWICZ R

Citation: G. Sek et al., CRITICAL LAYER THICKNESS OF INGAAS ON GAAS EXAMINED BY PHOTOREFLECTANCE SPECTROSCOPY, Vacuum, 50(1-2), 1998, pp. 219-221

OPTICAL INVESTIGATIONS OF STRAINED INCAAS QUANTUM-WELLS

Authors: SEK G CIORGA M MISIEWICZ J RADZIEWICZ D KORBUTOWICZ R PANEK M TLACZALA M

Citation: G. Sek et al., OPTICAL INVESTIGATIONS OF STRAINED INCAAS QUANTUM-WELLS, Advanced materials for optics and electronics, 7(6), 1997, pp. 307-310

SURFACE AND INTERFACE OF GAAS SL-GAAS STRUCTURES INVESTIGATED BY PHOTOREFLECTANCE SPECTROSCOPY/

Authors: JEZIERSKI K SITAREK P MISIEWICZ J PANEK M SCIANA B KORBUTOWICZ R TLACZALA M

Citation: K. Jezierski et al., SURFACE AND INTERFACE OF GAAS SL-GAAS STRUCTURES INVESTIGATED BY PHOTOREFLECTANCE SPECTROSCOPY/, Vacuum, 48(3-4), 1997, pp. 277-282

NEW LINES OBSERVED IN PHOTOLUMINESCENCE FROM GAAS GROWN BY MOCVD

Authors: CIORGA M MISIEWICZ J TLACZALA M PANEK M VEJE E

Citation: M. Ciorga et al., NEW LINES OBSERVED IN PHOTOLUMINESCENCE FROM GAAS GROWN BY MOCVD, Journal of luminescence, 72-4, 1997, pp. 650-651

PHOTOREFLECTANCE CHARACTERIZATION OF GAAS AND GAAS GAALAS STRUCTURES GROWN BY MOCVD/

Authors: MISIEWICZ J JEZIERSKI K SITAREK P MARKIEWICZ P KORBUTOWICZ R PANEK M SCIANA B TLACZALA M

Citation: J. Misiewicz et al., PHOTOREFLECTANCE CHARACTERIZATION OF GAAS AND GAAS GAALAS STRUCTURES GROWN BY MOCVD/, Advanced materials for optics and electronics, 5(6), 1995, pp. 321-327

INTERFACE AND SURFACE SUBSIGNALS IN PHOTOREFLECTANCE SPECTRA FOR GAASSI-GAAS STRUCTURES/

Authors: JEZIERSKI K SITAREK P MISIEWICZ J PANEK M SCIANA B KORBUTOWICZ R TLACZALA M

Citation: K. Jezierski et al., INTERFACE AND SURFACE SUBSIGNALS IN PHOTOREFLECTANCE SPECTRA FOR GAASSI-GAAS STRUCTURES/, Acta Physica Polonica. A, 88(4), 1995, pp. 751-754

PHOTOELECTRONIC PROPERTIES OF THE GAAS, SI EPITAXIAL LAYERS ON THE GAAS SUBSTRATE

Authors: CZEKALAMUKALLED Z KUZMINSKI S TLACZALA M

Citation: Z. Czekalamukalled et al., PHOTOELECTRONIC PROPERTIES OF THE GAAS, SI EPITAXIAL LAYERS ON THE GAAS SUBSTRATE, Vacuum, 46(5-6), 1995, pp. 489-491

INTERFACE AND SURFACE PHOTOREFLECTANCE SPECTRA FOR GAAS SI-GAAS STRUCTURES/

Authors: JEZIERSKI K MISIEWICZ J MARKIEWICZ P PANEK M SCIANA B TLACZALA M KORBUTOWICZ R

Citation: K. Jezierski et al., INTERFACE AND SURFACE PHOTOREFLECTANCE SPECTRA FOR GAAS SI-GAAS STRUCTURES/, Physica status solidi. a, Applied research, 147(2), 1995, pp. 467-475

APPLICATION OF KRAMERS-KRONIG ANALYSIS TO THE PHOTOREFLECTANCE SPECTRA OF HEAVILY-DOPED GAAS SI-GAAS STRUCTURES/

Authors: JEZIERSKI K MARKIEWICZ P MISIEWICZ J PANEK M SCIANA B KORBUTOWICZ R TLACZALA M

Citation: K. Jezierski et al., APPLICATION OF KRAMERS-KRONIG ANALYSIS TO THE PHOTOREFLECTANCE SPECTRA OF HEAVILY-DOPED GAAS SI-GAAS STRUCTURES/, Journal of applied physics, 77(8), 1995, pp. 4139-4141

PHOTOREFLECTANCE SPECTROSCOPY OF MOCVD GROWN GAAS EPILAYERS

Authors: MISIEWICZ J MARKIEWICZ P REBISZ J GUMIENNY Z PANEK M SCIANA B TLACZALA M

Citation: J. Misiewicz et al., PHOTOREFLECTANCE SPECTROSCOPY OF MOCVD GROWN GAAS EPILAYERS, Physica status solidi. b, Basic research, 183(2), 1994, pp. 110000043-110000046

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