ACNP - Italian Periodicals Catalogue

AAAAAA

ITA
ENG

Results: 1-25 | 26-29

Results: 1-25/29

THE EFFECT OF BIAXIAL STRESS ON THE SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GEXSI((1-X)) FILMS

Authors: CORNI F FRABBONI S TONINI R LEONE D DEBOER W GASPAROTTO A

Citation: F. Corni et al., THE EFFECT OF BIAXIAL STRESS ON THE SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF GEXSI((1-X)) FILMS, JPN J A P 2, 37(3B), 1998, pp. 339-342

MOLECULAR-CLONING AND FUNCTIONAL EXPRESSION OF A NOVEL NUCLEAR CHLORIDE-ION CHANNEL

Authors: MAZZANTI M TONINI R VALENZUELA SM BREIT SN

Citation: M. Mazzanti et al., MOLECULAR-CLONING AND FUNCTIONAL EXPRESSION OF A NOVEL NUCLEAR CHLORIDE-ION CHANNEL, Pflugers Archiv, 436(5), 1998, pp. 23-23

EXPRESSION OF CDC25MM RAS-GRF IN THE SK-N-BE NEUROBLASTOMA CELL-LINE ACCELERATES RETINOIC ACID-INDUCED NEURONAL DIFFERENTIATION/

Authors: TONINI R FERRONI A MANCINELLI E MAZZANTI MN STURANI E ZIPPEL R

Citation: R. Tonini et al., EXPRESSION OF CDC25MM RAS-GRF IN THE SK-N-BE NEUROBLASTOMA CELL-LINE ACCELERATES RETINOIC ACID-INDUCED NEURONAL DIFFERENTIATION/, Pflugers Archiv, 436(5), 1998, pp. 51-51

GROWTH-KINETICS OF A DISPLACEMENT FIELD IN HYDROGEN IMPLANTED SINGLE-CRYSTALLINE SILICON

Authors: BISERO D CORNI F FRABBONI S TONINI R OTTAVIANI G BALBONI R

Citation: D. Bisero et al., GROWTH-KINETICS OF A DISPLACEMENT FIELD IN HYDROGEN IMPLANTED SINGLE-CRYSTALLINE SILICON, Journal of applied physics, 83(8), 1998, pp. 4106-4110

ELECTRON-PARAMAGNETIC-RESONANCE EVIDENCE FOR REVERSIBLE TRANSFORMATION OF THERMAL DONOR INTO SHALLOW DONOR-TYPE CENTER IN HYDROGEN-IMPLANTED SILICON

Authors: RAKVIN B PIVAC B TONINI R CORNI F OTTAVIANI G

Citation: B. Rakvin et al., ELECTRON-PARAMAGNETIC-RESONANCE EVIDENCE FOR REVERSIBLE TRANSFORMATION OF THERMAL DONOR INTO SHALLOW DONOR-TYPE CENTER IN HYDROGEN-IMPLANTED SILICON, Applied physics letters, 73(22), 1998, pp. 3250-3252

USING ATOMIC-FORCE MICROSCOPY TO INVESTIGATE PATCH-CLAMPED NUCLEAR-MEMBRANE

Authors: DANKER T MAZZANTI M TONINI R RAKOWSKA A OBERLEITHNER H

Citation: T. Danker et al., USING ATOMIC-FORCE MICROSCOPY TO INVESTIGATE PATCH-CLAMPED NUCLEAR-MEMBRANE, Cell biology international (Print), 21(11), 1997, pp. 747-757

INFRARED STUDY OF SI-RICH SILICON-OXIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors: SASSELLA A BORGHESI A CORNI F MONELLI A OTTAVIANI G TONINI R PIVAC B BACCHETTA M ZANOTTI L

Citation: A. Sassella et al., INFRARED STUDY OF SI-RICH SILICON-OXIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 377-389

HELIUM IN SILICON - THERMAL-DESORPTION INVESTIGATION OF BUBBLE PRECURSORS

Authors: CORNI F NOBILI C OTTAVIANI G TONINI R CALZOLARI G CEROFOLINI GF QUEIROLO G

Citation: F. Corni et al., HELIUM IN SILICON - THERMAL-DESORPTION INVESTIGATION OF BUBBLE PRECURSORS, Physical review. B, Condensed matter, 56(12), 1997, pp. 7331-7338

INFRARED LIGHT-EMISSION DUE TO RADIATION-DAMAGE IN CRYSTALLINE SILICON

Authors: BISERO D CORNI F OTTAVIANI G TONINI R PAVESI L

Citation: D. Bisero et al., INFRARED LIGHT-EMISSION DUE TO RADIATION-DAMAGE IN CRYSTALLINE SILICON, Solid state communications, 101(12), 1997, pp. 889-891

MULTIPLE CONDUCTANCES OF NUCLEAR-ENVELOPE - SEARCHING FOR NUCLEOCYTOPLASMIC IONIC PERMEABILITY

Authors: MAZZANTI M TONINI R BERTASO F

Citation: M. Mazzanti et al., MULTIPLE CONDUCTANCES OF NUCLEAR-ENVELOPE - SEARCHING FOR NUCLEOCYTOPLASMIC IONIC PERMEABILITY, Pflugers Archiv, 434(2), 1997, pp. 50-50

RADIATION-ENHANCED TRANSPORT OF HYDROGEN IN SIO2

Authors: CORNI F MONELLI A OTTAVIANI G TONINI R QUEIROLO G ZANOTTI L

Citation: F. Corni et al., RADIATION-ENHANCED TRANSPORT OF HYDROGEN IN SIO2, Journal of non-crystalline solids, 216, 1997, pp. 71-76

PHOTOLUMINESCENCE CHARACTERIZATION OF SIGE QW GROWN BY MBE

Authors: DEPADOVA P PERFETTI P FELICI R PRIORI S QUARESIMA C PIZZOFERRATO R CASALBONI M PROSPOSITO P CORNI F TONINI R GRILLI A RACO A

Citation: P. Depadova et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SIGE QW GROWN BY MBE, Journal of luminescence, 72-4, 1997, pp. 324-326

VISIBLE-LIGHT EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS

Authors: GHISLOTTI G NIELSEN B ASOKAKUMAR P LYNN KG DIMAURO LF BOTTANI CE CORNI F TONINI R OTTAVIANI GP

Citation: G. Ghislotti et al., VISIBLE-LIGHT EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS, Journal of the Electrochemical Society, 144(6), 1997, pp. 2196-2199

OUTWARD-RECTIFIER K-ENVELOPE OF NEONATAL MICE ISOLATED-NUCLEI( CHANNEL ON THE NUCLEAR)

Authors: TONINI R MAZZANTI M

Citation: R. Tonini et M. Mazzanti, OUTWARD-RECTIFIER K-ENVELOPE OF NEONATAL MICE ISOLATED-NUCLEI( CHANNEL ON THE NUCLEAR), Biophysical journal, 72(2), 1997, pp. 108-108

POSITRON-ANNIHILATION STUDIES OF SILICON-RICH SIO2 PRODUCED BY HIGH-DOSE ION-IMPLANTATION

Authors: GHISLOTTI G NIELSEN B ASOKAKUMAR P LYNN KG DIMAURO LF COMI F TONINI R

Citation: G. Ghislotti et al., POSITRON-ANNIHILATION STUDIES OF SILICON-RICH SIO2 PRODUCED BY HIGH-DOSE ION-IMPLANTATION, Applied physics letters, 70(4), 1997, pp. 496-498

BANDGAP WIDENING IN QUANTUM SIEVES

Authors: CEROFOLINI GF MEDA L BISERO D CORNI F OTTAVIANI G TONINI R

Citation: Gf. Cerofolini et al., BANDGAP WIDENING IN QUANTUM SIEVES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 108-111

SILICON INTERSTITIALS GENERATION DURING THE EXPOSURE OF SILICON TO HYDROGEN PLASMA

Authors: TONINI R MONELLI A CORNI F FRABBONI S OTTAVIANI G QUEIROLO G

Citation: R. Tonini et al., SILICON INTERSTITIALS GENERATION DURING THE EXPOSURE OF SILICON TO HYDROGEN PLASMA, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 158-161

HYDROGEN DETERMINATION IN SI-RICH OXIDE THIN-FILMS

Authors: MONELLI A CORNI F TONINI R FERRARI C OTTAVIANI G ZANOTTI L QUEIROLO G

Citation: A. Monelli et al., HYDROGEN DETERMINATION IN SI-RICH OXIDE THIN-FILMS, Journal of applied physics, 80(1), 1996, pp. 109-114

STRESS AND INTERFACE MORPHOLOGY CONTRIBUTIONS IN THE CRYSTALLIZATION KINETICS OF A GEXSI1-X THIN-LAYER ON (100)SI

Authors: CORNI F FRABBONI S TONINI R OTTAVIANI G QUEIROLO G

Citation: F. Corni et al., STRESS AND INTERFACE MORPHOLOGY CONTRIBUTIONS IN THE CRYSTALLIZATION KINETICS OF A GEXSI1-X THIN-LAYER ON (100)SI, Journal of applied physics, 79(7), 1996, pp. 3528-3533

MULTIPLE CONDUCTANCE LEVELS IN NEONATAL MOUSE AND RAT-LIVER NUCLEI

Authors: TONINI R BERTASO F MAZZANTI M

Citation: R. Tonini et al., MULTIPLE CONDUCTANCE LEVELS IN NEONATAL MOUSE AND RAT-LIVER NUCLEI, Biophysical journal, 70(2), 1996, pp. 152-152

METALLURGICAL AND ELECTRICAL INVESTIGATION OF PT5NI95 SILICON INTERACTIONS/

Authors: CORNI F NOBILI C OTTAVIANI G TONINI R GREGORIO BG QUEIROLO G

Citation: F. Corni et al., METALLURGICAL AND ELECTRICAL INVESTIGATION OF PT5NI95 SILICON INTERACTIONS/, Applied surface science, 91(1-4), 1995, pp. 107-111

HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON

Authors: CEROFOLINI GF BALBONI R BISERO D CORNI F FRABBONI S OTTAVIANI G TONINI R BRUSA RS ZECCA A CESCHINI M GIEBEL G PAVESI L

Citation: Gf. Cerofolini et al., HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON, Physica status solidi. a, Applied research, 150(2), 1995, pp. 539-586

VISIBLE PHOTOLUMINESCENCE FROM HE-IMPLANTED SILICON

Authors: BISERO D COMI F NOBILI C TONINI R OTTAVIANI G MAZZOLENI C PAVESI L

Citation: D. Bisero et al., VISIBLE PHOTOLUMINESCENCE FROM HE-IMPLANTED SILICON, Applied physics letters, 67(23), 1995, pp. 3447-3449

RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES

Authors: CORNI F TONINI R BALBONI R VESCAN L

Citation: F. Corni et al., RECRYSTALLIZATION OF STRAINED GEXSI1-X SI LAYERS WITH VARIOUS GE GRADIENTS AND IN THE PRESENCE OF IMPURITIES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 9-13

RAPID THERMAL PROCESS-INDUCED DEFECTS IN SILICON POSITION DETECTORS

Authors: ALIETTI M NAVA F TONINI R CANTONI P STAGNI L CAVALLINI A

Citation: M. Alietti et al., RAPID THERMAL PROCESS-INDUCED DEFECTS IN SILICON POSITION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 337(2-3), 1994, pp. 394-402

Risultati: 1-25 | 26-29