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Results: 1-15 |
Results: 15

Authors: MEZDROGINA MM ABRAMOV AV MOSINA GN TRAPEZNIKOVA IN PATSEKIN AV
Citation: Mm. Mezdrogina et al., EFFECT OF ANNEALING IN AN ATOMIC-HYDROGEN ATMOSPHERE ON THE PROPERTIES OF AMORPHOUS HYDRATED SILICON FILMS AND THE PARAMETERS OF P-I-N STRUCTURES BASED ON THEM, Semiconductors, 32(5), 1998, pp. 555-561

Authors: KOMPAN ME KONKOV OI TERUKOV EI TRAPEZNIKOVA IN SHABANOV IY
Citation: Me. Kompan et al., INTENSE LUMINESCENCE WITH A TUNABLE WAVELENGTH FROM FILMS OF TETRAHEDRAL AMORPHOUS HYDROGENATED CARBON ON A FUSED QUARTZ SUBSTRATE, Technical physics letters, 23(2), 1997, pp. 160-161

Authors: KONKOV OI KAPITONOV IN TRAPEZNIKOVA IN TERUKOV EI
Citation: Oi. Konkov et al., MEASUREMENT OF THE AMOUNT OF FREE AND BOUND HYDROGEN IN AMORPHOUS-CARBON, Technical physics letters, 23(1), 1997, pp. 9-10

Authors: KONKOV OI KAPITONOV IN TRAPEZNIKOVA IN TERUKOV EI
Citation: Oi. Konkov et al., MEASUREMENT OF THE CONTENT OF FREE AND BO UNDED HYDROGEN IN AMORPHOUS-CARBON, Pis'ma v Zurnal tehniceskoj fiziki, 23(1), 1997, pp. 3-8

Authors: VASILEV BA TERUKOV EI TRAPEZNIKOVA IN CHELNOKOV VE
Citation: Ba. Vasilev et al., EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTOLUMINESCENCE PROPERTIES OF A-C-H FILMS, Semiconductors, 30(9), 1996, pp. 849-850

Authors: BABAEV AA TRAPEZNIKOVA IN KONKOV OI TERUKOV EI
Citation: Aa. Babaev et al., MODIFICATION OF THE PROPERTIES OF AMORPHOUS HYDROGENATED SILICON-CARBIDE A-SI1-XCX-H FILMS AS A RESULT OF ANNEALING, Semiconductors, 30(4), 1996, pp. 389-390

Authors: KONKOV OI TERUKOV EI TRAPEZNIKOVA IN
Citation: Oi. Konkov et al., FABRICATION AND PROPERTIES OF LOW-TEMPERATURE TETRAHEDRAL AMORPHOUS-CARBON FILMS, Semiconductors, 30(12), 1996, pp. 1138-1139

Authors: KUDOYAROVA VK TERUKOV EI TRAPEZNIKOVA IN VIOLINA GN ELKINA NV KAVALYAUSKAS RA
Citation: Vk. Kudoyarova et al., OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI1-XCX-H LAYERS IN CONNECTIONWITH PROMISING ELECTROPHOTOGRAPHIC APPLICATIONS, Semiconductors, 28(8), 1994, pp. 742-747

Authors: ROGACHEV NA KUZNETSOV AN TRAPEZNIKOVA IN TERUKOV EI CHELNOKOV VE
Citation: Na. Rogachev et al., AMORPHOUS HYDROGENATED SILICON-CARBIDE PRODUCED BY MAGNETRON REACTIVESPUTTERING, Semiconductors, 28(8), 1994, pp. 776-778

Authors: KONKOV OI TRAPEZNIKOVA IN TERUKOV EI
Citation: Oi. Konkov et al., ELECTRON-MOBILITY AND DENSITY-OF-STATES IN A-C-H, Semiconductors, 28(8), 1994, pp. 791-792

Authors: DANISHEVSKII AM TRAPEZNIKOVA IN TERUKOV EI TSOLOV MB
Citation: Am. Danishevskii et al., EFFECT OF CARBON CONCENTRATION ON THE PROPERTIES OF THE STRUCTURAL NETWORK IN A-SI1-XCX-H ALLOYS, Semiconductors, 28(10), 1994, pp. 1001-1005

Authors: KONKOV OI TERUKOV EI TRAPEZNIKOVA IN CHELNOKOV VE
Citation: Oi. Konkov et al., A MODEL OF DENSITY-OF-STATES IN AMORPHOUS SI, C AND SIC FROM TIME-OF-FLIGHT MEASUREMENT, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1356-1359

Authors: TRAPEZNIKOVA IN KONKOV OI TERUKOV EI YASTREBOV SG
Citation: In. Trapeznikova et al., MODIFICATION OF PROPERTIES OF ALPHA-SI1-X CX-H FILMS BY THE HIGH-TEMPERATURE ANNEALING TECHNIQUE, Fizika tverdogo tela, 36(9), 1994, pp. 2780-2784

Authors: KONKOV OI TRAPEZNIKOVA IN TERUKOV EI
Citation: Oi. Konkov et al., SCHOTTKY DIODE ON ALPHA-SI-0.5C-0.5-H, Pis'ma v Zurnal tehniceskoj fiziki, 20(8), 1994, pp. 41-43

Authors: KHOLODKEVICH SV BEKRENEV AV DOMOROSHCENKOV VI KONKOV OI POBORCHY VV TERUKOV EI TRAPEZNIKOVA IN
Citation: Sv. Kholodkevich et al., NATURAL FULLERENES SEPARATION FROM THE SH UNGITE ROCKS OF KARELIA, Doklady Akademii nauk. Rossijskaa akademia nauk, 330(3), 1993, pp. 340-341
Risultati: 1-15 |