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Results: 1-9 |
Results: 9
MICROPIPE AND DISLOCATION DENSITY REDUCTION IN 6H-SIC AND 4H-SIC STRUCTURES GROWN BY LIQUID-PHASE EPITAXY
Authors: RENDAKOVA SV NIKITINA IP TREGUBOVA AS DMITRIEV VA
Citation: Sv. Rendakova et al., MICROPIPE AND DISLOCATION DENSITY REDUCTION IN 6H-SIC AND 4H-SIC STRUCTURES GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 292-295
INVESTIGATION OF THE HETEROEPITAXIAL STRUCTURES (P-3C N-6H)-SIC/
Authors: LEBEDEV AA SAVKINA NS TREGUBOVA AS SHCHEGLOV MP
Citation: Aa. Lebedev et al., INVESTIGATION OF THE HETEROEPITAXIAL STRUCTURES (P-3C N-6H)-SIC/, Semiconductors, 31(9), 1997, pp. 926-928
STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES
Authors: ANDREEV AN SMIRNOVA NY TREGUBOVA AS SHCHEGLOV MP CHELNOKOV VE
Citation: An. Andreev et al., STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES, Semiconductors, 31(3), 1997, pp. 232-236
CHARACTERIZATION OF MACRODEFECTS IN PURE SILICON-CARBIDE FILMS USING X-RAY TOPOGRAPHY AND RAMAN-SCATTERING
Authors: DANISHEVSKII AM TREGUBOVA AS LEBEDEV AA
Citation: Am. Danishevskii et al., CHARACTERIZATION OF MACRODEFECTS IN PURE SILICON-CARBIDE FILMS USING X-RAY TOPOGRAPHY AND RAMAN-SCATTERING, Semiconductors, 31(10), 1997, pp. 1025-1029
INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION
Authors: ANDREEV AN TREGUBOVA AS SCHEGLOV MP SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 141-146
6H-3C SIC STRUCTURES GROWN BY SUBLIMATION EPITAXY
Authors: LEBEDEV AA SAVKINA NS STRELCHUK AM TREGUBOVA AS SCHEGLOV MP
Citation: Aa. Lebedev et al., 6H-3C SIC STRUCTURES GROWN BY SUBLIMATION EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 168-170
GROWTH AND INVESTIGATION OF THE BIG AREA LELY-GROWN SUBSTRATES
Authors: LEBEDEV AA TREGUBOVA AS CHELNOKOV VE SCHEGLOV MP GLAGOVSKII AA
Citation: Aa. Lebedev et al., GROWTH AND INVESTIGATION OF THE BIG AREA LELY-GROWN SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 291-295
ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD
Authors: ANDREEV AN TREGUBOVA AS SHCHEGLOV MP RASTEGAEV VP DOROZHKIN SI CHELNOKOV VE
Citation: An. Andreev et al., ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD, Semiconductors, 29(10), 1995, pp. 955-956
DISLOCATION NUCLEATION AND MOTION UNDER M ECHANICAL SURFACE DAMAGE OFSILICON-CARBIDE
Authors: TREGUBOVA AS MOKHOV EN SHULPINA IL
Citation: As. Tregubova et al., DISLOCATION NUCLEATION AND MOTION UNDER M ECHANICAL SURFACE DAMAGE OFSILICON-CARBIDE, Fizika tverdogo tela, 36(1), 1994, pp. 132-136
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