AAAAAA

   
Results: 1-12 |
Results: 12
Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
Authors: Wang, WC Pan, HJ Thei, KB Lin, KW Yu, KH Cheng, CC Cheng, SY Liu, WC
Citation: Wc. Wang et al., Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor, SUPERLATT M, 29(5), 2001, pp. 359-365
Characterization of polysilicon resistors in sub-0.25 mu m CMOS ULSI applications
Authors: Liu, WC Thei, KB Chuang, HM Lin, KW Cheng, CC Ho, YS Su, CW Wong, SC Lin, CH Diaz, CH
Citation: Wc. Liu et al., Characterization of polysilicon resistors in sub-0.25 mu m CMOS ULSI applications, IEEE ELEC D, 22(7), 2001, pp. 318-320
A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications
Authors: Thei, KB Liu, WC Chuang, HM Lin, KW Cheng, CC Ho, CH Su, CW Wuu, SG Wang, CS
Citation: Kb. Thei et al., A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications, IEEE DEVICE, 48(8), 2001, pp. 1740-1742
A new and improved borderless contact (BLC) structure for high-performanceTi-salicide in sub-quarter micron CMOS devices
Authors: Liu, WC Thei, KB Wang, WC Pan, HJ Wuu, SG Lei, MT Wang, CS Cheng, SY
Citation: Wc. Liu et al., A new and improved borderless contact (BLC) structure for high-performanceTi-salicide in sub-quarter micron CMOS devices, IEEE ELEC D, 21(7), 2000, pp. 344-346
Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor
Authors: Liu, WC Pan, HJ Wang, WC Thei, KB Lin, KW Yu, KH Cheng, CC
Citation: Wc. Liu et al., Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor, IEEE ELEC D, 21(11), 2000, pp. 524-527
Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor
Authors: Wang, WC Pan, HJ Thei, KB Lin, KW Yu, KH Cheng, CC Laih, LW Cheng, SY Liu, WC
Citation: Wc. Wang et al., Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor, SEMIC SCI T, 15(9), 2000, pp. 935-940
Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors
Authors: Pan, HJ Wang, WC Thei, KB Cheng, CC Yu, KH Lin, KW Wu, CZ Liu, WC
Citation: Hj. Pan et al., Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors, SEMIC SCI T, 15(12), 2000, pp. 1101-1106
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
Authors: Chang, WL Pan, HJ Wang, WC Thei, KB Yu, KH Lin, KW Cheng, CC Lour, WS Liu, WC
Citation: Wl. Chang et al., High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors, SEMIC SCI T, 15(1), 2000, pp. 1-6
Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications
Authors: Liu, WC Wang, WC Pan, HJ Chen, JY Cheng, SY Lin, KW Yu, KH Thei, KB Cheng, CC
Citation: Wc. Liu et al., Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications, IEEE DEVICE, 47(8), 2000, pp. 1553-1559
Temperature-dependent characteristics of the inverted delta-doped V-shapedInGaP/InxGa1-xAs/GaAs pseudomorphic transistors
Authors: Chang, WL Pan, HJ Wang, WC Thei, KB Cheng, SY Lour, WS Liu, WC
Citation: Wl. Chang et al., Temperature-dependent characteristics of the inverted delta-doped V-shapedInGaP/InxGa1-xAs/GaAs pseudomorphic transistors, JPN J A P 2, 38(12A), 1999, pp. L1385-L1387
A novel InP/InAlGaAs negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) with interesting topee-shaped current-voltage characteristics
Authors: Liu, WC Wang, WC Chen, JY Pan, HJ Cheng, SY Thei, KB Chang, WL
Citation: Wc. Liu et al., A novel InP/InAlGaAs negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) with interesting topee-shaped current-voltage characteristics, IEEE ELEC D, 20(10), 1999, pp. 510-513
Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
Authors: Chang, WL Pan, HJ Wang, WC Thei, KB Lour, WS Liu, WC
Citation: Wl. Chang et al., Influences of the mesa-sidewall effect on Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors, SEMIC SCI T, 14(10), 1999, pp. 887-891
Risultati: 1-12 |