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Results: 1-12 |
Results: 12
Empirical modeling of LF gate noise irm GaAs DCFET in impact ionization regime
Authors: Lambert, B Malbert, N Labat, N Verdier, F Touboul, A
Citation: B. Lambert et al., Empirical modeling of LF gate noise irm GaAs DCFET in impact ionization regime, IEEE ELEC D, 22(2), 2001, pp. 50-52
Front side and backside OBIT mappings applied to single event transient testing
Authors: Lewis, D Pouget, V Beauchene, T Lapuyade, H Fouillat, P Touboul, A Beaudoin, F Perdu, P
Citation: D. Lewis et al., Front side and backside OBIT mappings applied to single event transient testing, MICROEL REL, 41(9-10), 2001, pp. 1471-1476
Evolution of LF noise in power PHEMT's submitted to RF and DC step stresses
Authors: Lambert, B Malbert, N Labat, N Verdier, F Touboul, A Huguet, P Bonnet, R
Citation: B. Lambert et al., Evolution of LF noise in power PHEMT's submitted to RF and DC step stresses, MICROEL REL, 41(9-10), 2001, pp. 1573-1578
Special issue - 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Authors: Labat, N Touboul, A
Citation: N. Labat et A. Touboul, Special issue - 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, MICROEL REL, 41(9-10), 2001, pp. IX-IX
Experimental procedure for the evaluation of GaAs-based HBT's reliability
Authors: Maneux, C Labat, N Malbert, N Touboul, A Danto, Y Dumas, JM Riet, M Benchimol, JL
Citation: C. Maneux et al., Experimental procedure for the evaluation of GaAs-based HBT's reliability, MICROELEC J, 32(4), 2001, pp. 357-371
Low frequency gate noise in a diode-connected MESFET: measurements and modeling
Authors: Lambert, B Malbert, N Verdier, F Labat, N Touboul, A Vandamme, LKJ
Citation: B. Lambert et al., Low frequency gate noise in a diode-connected MESFET: measurements and modeling, IEEE DEVICE, 48(4), 2001, pp. 628-633
Laser cross section measurement for the evaluation of single-event effectsin integrated circuits
Authors: Pouget, V Fouillat, P Lewis, D Lapuyade, H Darracq, F Touboul, A
Citation: V. Pouget et al., Laser cross section measurement for the evaluation of single-event effectsin integrated circuits, MICROEL REL, 40(8-10), 2000, pp. 1371-1375
Comparison of RF and DC life-test effects on GaAs power MESFETs
Authors: Lambert, B Saysset-Malbert, N Labat, N Verdier, F Touboul, A Huguet, P Garat, F
Citation: B. Lambert et al., Comparison of RF and DC life-test effects on GaAs power MESFETs, MICROEL REL, 40(8-10), 2000, pp. 1727-1731
Effects of RF life-test on LF electrical parameters of GaAs power MESFETs
Authors: Saysset-Malbert, N Lambert, B Maneux, C Labat, N Touboul, A Danto, Y Vandamme, LKJ Huguet, P Auxemery, P Garat, F
Citation: N. Saysset-malbert et al., Effects of RF life-test on LF electrical parameters of GaAs power MESFETs, MICROEL REL, 39(6-7), 1999, pp. 1061-1066
Special issue - Reliability of electron devices, failure physics and analysis
Authors: Labat, N Touboul, A
Citation: N. Labat et A. Touboul, Special issue - Reliability of electron devices, failure physics and analysis, MICROEL REL, 39(6-7), 1999, pp. IX-X
Total dose effects on gate controlled lateral PNP bipolar junction transistors
Authors: Cazenave, P Fouillat, P Montagner, X Barnaby, H Schrimpf, RD Bonora, L David, JP Touboul, A Calvet, MC Calvel, P
Citation: P. Cazenave et al., Total dose effects on gate controlled lateral PNP bipolar junction transistors, IEEE NUCL S, 45(6), 1998, pp. 2577-2583
Does transoesophageal echocardiography modify the management of atrial fibrillation?
Authors: Lardoux, H Touboul, A Thai, SP Payot, L Jacq, L Pezzano, M
Citation: H. Lardoux et al., Does transoesophageal echocardiography modify the management of atrial fibrillation?, ANN CARD AN, 47(9), 1998, pp. 676-682
Risultati: 1-12 |