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Results: 1-25 |
Results: 25
STM study of controlling heteroepitaxial growth of nitride semiconductor films on an atomic scale
Authors: Bakhtizin, RZ Xue, QZ Xue, QK Hasegawa, Y Tsong, IST Sakurai, T
Citation: Rz. Bakhtizin et al., STM study of controlling heteroepitaxial growth of nitride semiconductor films on an atomic scale, PHYS LOW-D, 3-4, 2001, pp. 243-256
Decay kinetics of two-dimensional islands and holes on Si(111) studied by low-energy electron microscopy - art. no. 245402
Authors: Hibino, H Hu, CW Ogino, T Tsong, IST
Citation: H. Hibino et al., Decay kinetics of two-dimensional islands and holes on Si(111) studied by low-energy electron microscopy - art. no. 245402, PHYS REV B, 6324(24), 2001, pp. 5402
Hysteresis in the (1 x 1)-(7 x 7) first-order phase transition on the Si(111) surface
Authors: Hu, CW Hibino, H Ogino, T Tsong, IST
Citation: Cw. Hu et al., Hysteresis in the (1 x 1)-(7 x 7) first-order phase transition on the Si(111) surface, SURF SCI, 487(1-3), 2001, pp. 191-200
Enhanced terrace stability for preparation of step-free Si(001)-(2x1) surfaces - art. no. 136103
Authors: Nielsen, JF Pelz, JP Hibino, H Hu, CW Tsong, IST
Citation: Jf. Nielsen et al., Enhanced terrace stability for preparation of step-free Si(001)-(2x1) surfaces - art. no. 136103, PHYS REV L, 8713(13), 2001, pp. 6103
Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC
Authors: Xue, QK Xue, QZ Kuwano, S Nakayama, K Sakurai, T Tsong, IST Qiu, XG Segawa, Y
Citation: Qk. Xue et al., Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC, J CRYST GR, 229(1), 2001, pp. 41-47
Elastic properties of nanocrystalline zirconium-silicon-boron thin films
Authors: Chirita, M Xia, H Sooryakumar, R Tolle, JB Torres, VM Wilkens, BJ Smith, DJ Kouvetakis, J Tsong, IST
Citation: M. Chirita et al., Elastic properties of nanocrystalline zirconium-silicon-boron thin films, J APPL PHYS, 89(8), 2001, pp. 4349-4353
Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure
Authors: Nielsen, JF Pelz, JP Hibino, H Hu, CW Tsong, IST Kouvetakis, J
Citation: Jf. Nielsen et al., Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure, APPL PHYS L, 79(23), 2001, pp. 3857-3859
Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates
Authors: Roucka, R Tolle, J Smith, DJ Crozier, P Tsong, IST Kouvetakis, J
Citation: R. Roucka et al., Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates, APPL PHYS L, 79(18), 2001, pp. 2880-2882
Supersonic beam epitaxy of wide bandgap semiconductors
Authors: Torres, VM Jordan, DC Tsong, IST Doak, RB
Citation: Vm. Torres et al., Supersonic beam epitaxy of wide bandgap semiconductors, ATOMIC AND MOLECULAR BEAMS: THE STATE OF THE ART 2000, 2001, pp. 945-958
Morphological control of GaN buffer layers grown by molecular beam epitaxyon 6H-SiC(0001)
Authors: Hu, CW Smith, DJ Doak, RB Tsong, IST
Citation: Cw. Hu et al., Morphological control of GaN buffer layers grown by molecular beam epitaxyon 6H-SiC(0001), SURF REV L, 7(5-6), 2000, pp. 565-570
Preface
Authors: Tsong, IST Ichimiya, A
Citation: Ist. Tsong et A. Ichimiya, Preface, SURF REV L, 7(5-6), 2000, pp. III-III
Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunnelingmicroscopy
Authors: Xue, QK Xue, QZ Kuwano, S Sakurai, T Ohno, T Tsong, IST Qiu, XG Segawa, Y
Citation: Qk. Xue et al., Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunnelingmicroscopy, THIN SOL FI, 367(1-2), 2000, pp. 149-158
III-N semiconductor growth with activated nitrogen: State-specific study of A(3)Sigma(+)(u) metastable N-2 molecules
Authors: Jordan, DC Tsong, IST Smith, DJ Wilkens, BJ Doak, RB
Citation: Dc. Jordan et al., III-N semiconductor growth with activated nitrogen: State-specific study of A(3)Sigma(+)(u) metastable N-2 molecules, APPL PHYS L, 77(19), 2000, pp. 3030-3032
Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching
Authors: Stirman, JN Ponce, FA Pavlovska, A Tsong, IST Smith, DJ
Citation: Jn. Stirman et al., Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching, APPL PHYS L, 76(7), 2000, pp. 822-824
Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
Authors: Hearne, SJ Han, J Lee, SR Floro, JA Follstaedt, DM Chason, E Tsong, IST
Citation: Sj. Hearne et al., Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures, APPL PHYS L, 76(12), 2000, pp. 1534-1536
Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH3 in helium
Authors: Torres, VM Doak, RB Wilkens, BJ Smith, DJ Tsong, IST
Citation: Vm. Torres et al., Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH3 in helium, J VAC SCI A, 17(4), 1999, pp. 1570-1576
Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition
Authors: Nesting, DC Kouvetakis, J Hearne, S Chason, E Tsong, IST
Citation: Dc. Nesting et al., Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition, J VAC SCI A, 17(3), 1999, pp. 891-894
Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface
Authors: Xue, Q Xue, QK Bakhtizin, RZ Hasegawa, Y Tsong, IST Sakurai, T Ohno, T
Citation: Q. Xue et al., Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface, PHYS REV B, 59(19), 1999, pp. 12604-12611
Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions
Authors: Xue, QK Xue, QZ Bakhtizin, RZ Hasegawa, Y Tsong, IST Sakurai, T Ohno, T
Citation: Qk. Xue et al., Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions, PHYS REV L, 82(15), 1999, pp. 3074-3077
Homoepitaxial GaN layers studied by low-energy electron microscopy, atomicforce microscopy and transmission electron microscopy
Authors: Pavlovska, A Torres, VM Edwards, JL Bauer, E Smith, DJ Doak, RB Tsong, IST Thomson, DB Davis, RF
Citation: A. Pavlovska et al., Homoepitaxial GaN layers studied by low-energy electron microscopy, atomicforce microscopy and transmission electron microscopy, PHYS ST S-A, 176(1), 1999, pp. 469-473
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
Authors: Pavlovska, A Torres, VM Bauer, E Doak, RB Tsong, IST Thomson, DB Davis, RF
Citation: A. Pavlovska et al., Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source, APPL PHYS L, 75(7), 1999, pp. 989-991
Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers
Authors: Torres, VM Edwards, JL Wilkens, BJ Smith, DJ Doak, RB Tsong, IST
Citation: Vm. Torres et al., Influence of 6H-SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers, APPL PHYS L, 74(7), 1999, pp. 985-987
Stress evolution during metalorganic chemical vapor deposition of GaN
Authors: Hearne, S Chason, E Han, J Floro, JA Figiel, J Hunter, J Amano, H Tsong, IST
Citation: S. Hearne et al., Stress evolution during metalorganic chemical vapor deposition of GaN, APPL PHYS L, 74(3), 1999, pp. 356-358
Two-step preparation of 6H-SiC(0001) surface for epitaxial growth of GaN thin film
Authors: Xue, QZ Xue, QK Hasegawa, Y Tsong, IST Sakurai, T
Citation: Qz. Xue et al., Two-step preparation of 6H-SiC(0001) surface for epitaxial growth of GaN thin film, APPL PHYS L, 74(17), 1999, pp. 2468-2470
Comment on "Step faceting at the (001) surface of boron doped silicon"
Authors: Pelz, JP Ebner, C Jones, DE Hong, Y Bauer, E Tsong, IST
Citation: Jp. Pelz et al., Comment on "Step faceting at the (001) surface of boron doped silicon", PHYS REV L, 81(24), 1998, pp. 5473-5473
Risultati: 1-25 |