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Results:
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Results: 17
Authors:
Normand, P
Kapetanakis, E
Tsoukalas, D
Kamoulakos, G
Beltsios, K
Van den Berg, J
Zhang, S
Citation: P. Normand et al., MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation, MAT SCI E C, 15(1-2), 2001, pp. 145-147
Authors:
Chatzandroulis, S
Tsoukalas, D
Citation: S. Chatzandroulis et D. Tsoukalas, Capacitance to frequency converter suitable for sensor applications using telemetry, ANALOG IN C, 27(1-2), 2001, pp. 31-38
Authors:
Normand, P
Beltsios, K
Kapetanakis, E
Tsoukalas, D
Travlos, T
Stoemenos, J
Van Den Berg, J
Zhang, S
Vieu, C
Launois, H
Gautier, J
Jourdan, F
Palun, L
Citation: P. Normand et al., Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films, NUCL INST B, 178, 2001, pp. 74-77
Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon
Authors:
Cristiano, F
Colombeau, B
Grisolia, J
de Mauduit, B
Giles, F
Omri, M
Skarlatos, D
Tsoukalas, D
Claverie, A
Citation: F. Cristiano et al., Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon, NUCL INST B, 178, 2001, pp. 84-88
Authors:
Tsoukalas, D
Skarlatos, D
Stoemenos, J
Citation: D. Tsoukalas et al., Investigation of the influence of a dislocation loop layer on interstitialkinetics during surface oxidation of silicon, NUCL INST B, 178, 2001, pp. 180-183
Authors:
Normand, P
Kapetanakis, E
Tsoukalas, D
Tserepi, A
Tsoi, E
Beltsios, K
Aidinis, K
Zhang, S
van den Berg, J
Citation: P. Normand et al., Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques, MICROEL ENG, 57-8, 2001, pp. 1003-1007
Authors:
Mateescu, I
Johnson, G
Manea, A
Hatzakis, M
Tsoi, E
Tsoukalas, D
Citation: I. Mateescu et al., Mass-loading effect on parameters of quartz and langasite resonators: Recent results, ANN CHIM-SC, 26(1), 2001, pp. 165-171
Authors:
Tsoukalas, D
Tsamis, C
Normand, P
Citation: D. Tsoukalas et al., Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material, J APPL PHYS, 89(12), 2001, pp. 7809-7813
Authors:
Chatzandroulis, S
Tsoukalas, D
Neukomm, PA
Citation: S. Chatzandroulis et al., A miniature pressure system with a capacitive sensor and a passive telemetry link for use in implantable applications, J MICROEL S, 9(1), 2000, pp. 18-23
Authors:
Skarlatos, D
Tsoukalas, D
Giles, LF
Claverie, A
Citation: D. Skarlatos et al., Point defect injection during nitrous oxidation of silicon at low temperatures, J APPL PHYS, 87(3), 2000, pp. 1103-1109
Authors:
Tsoukalas, D
Skarlatos, D
Stoemenos, J
Citation: D. Tsoukalas et al., Investigation of the interaction between silicon interstitials and dislocation loops using the wafer bonding technique, J APPL PHYS, 87(12), 2000, pp. 8380-8384
Authors:
Kapetanakis, E
Normand, P
Tsoukalas, D
Beltsios, K
Stoemenos, J
Zhang, S
van den Berg, J
Citation: E. Kapetanakis et al., Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing, APPL PHYS L, 77(21), 2000, pp. 3450-3452
Authors:
Goustouridis, D
Tsoukalas, D
Normand, P
Kontos, AG
Raptis, Y
Anastassakis, E
Citation: D. Goustouridis et al., Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding, SENS ACTU-A, 76(1-3), 1999, pp. 403-408
Authors:
Giles, LF
Omri, M
de Mauduit, B
Claverie, A
Skarlatos, D
Tsoukalas, D
Nejim, A
Citation: Lf. Giles et al., Coarsening of end-of-range defects in ion-implanted silicon annealed in neutral and oxidizing ambients, NUCL INST B, 148(1-4), 1999, pp. 273-278
Authors:
Skarlatos, D
Omri, M
Claverie, A
Tsoukalas, D
Citation: D. Skarlatos et al., Estimation of the number of interstitial atoms injected in silicon during thin oxide formation, J ELCHEM SO, 146(6), 1999, pp. 2276-2283
Authors:
Normand, P
Tsoukalas, D
Kapetanakis, E
Van den Berg, JA
Armour, DG
Stoemenos, J
Vieu, C
Citation: P. Normand et al., Formation of 2-D arrays of silicon nanocrystals in thin SiO2 films by very-low energy Si+ ion implantation, EL SOLID ST, 1(2), 1998, pp. 88-90
Authors:
Tsamis, C
Tsoukalas, D
Citation: C. Tsamis et D. Tsoukalas, Model for the recombination velocity of silicon interstitials at nonoxidizing interfaces, J APPL PHYS, 84(12), 1998, pp. 6650-6658
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