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Results: 1-25/37
Authors:
Sarangi, D
Godon, C
Granier, A
Moalic, R
Goullet, A
Turban, G
Chauvet, O
Citation: D. Sarangi et al., Carbon nanotubes and nanostructures grown from diamond-like carbon and polyethylene, APPL PHYS A, 73(6), 2001, pp. 765-768
Authors:
Angleraud, B
Mubumbila, N
Tessier, PY
Fernandez, V
Turban, G
Citation: B. Angleraud et al., Bonding structure of carbon nitride films deposited by reactive plasma beam sputtering, DIAM RELAT, 10(3-7), 2001, pp. 1142-1146
Authors:
Rhallabi, A
Turban, G
Citation: A. Rhallabi et G. Turban, Study of the early stage of SiO2 growth by a TEOS-O-2 plasma mixture usinga three-dimensional Monte Carlo model, J VAC SCI A, 19(3), 2001, pp. 743-749
Authors:
Benlahsen, M
Racine, B
Zellama, K
Turban, G
Citation: M. Benlahsen et al., On the hydrogen incorporation, intrinsic stress and thermal stability of hydrogenated amorphous carbon films deposited from an electron cyclotron resonance plasma, J NON-CRYST, 283(1-3), 2001, pp. 47-55
Authors:
Aumaille, K
Granier, A
Grolleau, B
Turban, G
Citation: K. Aumaille et al., Mass spectrometric investigation of the positive ions formed in low-pressure oxygen/tetraethoxysilane and argon/tetraethoxysilane plasmas, J APPL PHYS, 89(9), 2001, pp. 5227-5229
Authors:
Aumaille, K
Granier, A
Schmidt, M
Grolleau, B
Vallee, C
Turban, G
Citation: K. Aumaille et al., Study of oxygen/tetraethoxysilane plasmas in a helicon reactor using optical emission spectroscopy and mass spectrometry, PLASMA SOUR, 9(3), 2000, pp. 331-339
Authors:
Hong, JG
Granier, A
Goullet, A
Turban, G
Citation: Jg. Hong et al., In situ deposition and etching process of a-C : H : N films in a dual electron cyclotron resonance-radio frequency plasma, DIAM RELAT, 9(3-6), 2000, pp. 573-576
Authors:
Durand-Drouhin, O
Zeinert, A
Benlahsen, M
Zellama, K
Kre, R
Turban, G
Grosman, A
Citation: O. Durand-drouhin et al., On the microstructural, optical and mechanical properties of hydrogenated amorphous carbon films deposited in electron cyclotron resonance plasma, DIAM RELAT, 9(3-6), 2000, pp. 752-755
Authors:
Vallee, C
Rhallabi, A
Granier, A
Goullet, A
Turban, G
Citation: C. Vallee et al., Estimation of the TEOS dissociation coefficient by electron impact, J VAC SCI A, 18(6), 2000, pp. 2728-2732
Authors:
Goullet, A
Vallee, C
Granier, A
Turban, G
Citation: A. Goullet et al., Optical spectroscopic analyses of OH incorporation into SiO2 films deposited from O-2/tetraethoxysilane plasmas, J VAC SCI A, 18(5), 2000, pp. 2452-2458
Authors:
Rhallabi, A
Houlet, L
Turban, G
Citation: A. Rhallabi et al., Estimation of surface kinetic parameters and two-dimensional simulation ofInP pattern features during CH4-H-2 plasma etching, J VAC SCI A, 18(4), 2000, pp. 1366-1372
Authors:
Hong, JG
Granier, A
Leteinturier, C
Peignon, MC
Turban, G
Citation: Jg. Hong et al., Measurements of rf bias effect in a dual electron cyclotron resonance-rf methane plasma using the Langmuir probe method, J VAC SCI A, 18(2), 2000, pp. 497-502
Authors:
Tessier, PY
N'guessan, RK
Angleraud, B
Fernandez, V
Mubumbila, N
Turban, G
Citation: Py. Tessier et al., Carbon nitride thin films deposited by reactive plasma beam sputtering, SURF COAT, 125(1-3), 2000, pp. 295-300
Authors:
Rolland, L
Peignon, MC
Cardinaud, C
Turban, G
Citation: L. Rolland et al., SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer, MICROEL ENG, 53(1-4), 2000, pp. 375-379
Authors:
Gaboriau, F
Peignon, MC
Barreau, A
Turban, G
Cardinaud, C
Pfeiffer, K
Bleidiessel, G
Grutzner, G
Citation: F. Gaboriau et al., High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography, MICROEL ENG, 53(1-4), 2000, pp. 501-505
Authors:
Le Brizoual, L
Guilet, S
Lemperiere, G
Granier, A
Coulon, N
Lancin, M
Turban, G
Citation: L. Le Brizoual et al., Analysis of Ti-Si-N diffusion barrier films obtained by r.f. magnetron sputtering, MICROEL ENG, 50(1-4), 2000, pp. 509-513
Authors:
Hong, JG
Goullet, A
Turban, G
Citation: Jg. Hong et al., Optical characterization of hydrogenated amorphous carbon (a-C : H) thin films deposited from methane plasma, THIN SOL FI, 364(1-2), 2000, pp. 144-149
Authors:
Aumaille, K
Vallee, C
Granier, A
Goullet, A
Gaboriau, F
Turban, G
Citation: K. Aumaille et al., A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor, THIN SOL FI, 359(2), 2000, pp. 188-196
Authors:
Hong, JG
Lee, S
Cardinaud, C
Turban, G
Citation: Jg. Hong et al., Electronic and optical investigation of hydrogenated amorphous carbon (a-C: H) by X-ray photoemission spectroscopy and spectroscopic ellipsometry, J NON-CRYST, 265(1-2), 2000, pp. 125-132
Authors:
Gogolides, E
Vauvert, P
Kokkoris, G
Turban, G
Boudouvis, AG
Citation: E. Gogolides et al., Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition, J APPL PHYS, 88(10), 2000, pp. 5570-5584
Authors:
Bhattacharyya, S
Vallee, C
Cardinaud, C
Turban, G
Citation: S. Bhattacharyya et al., Structure of nitrogenated carbon films prepared from acetylene and nitrogen mixture in electron cyclotron resonance plasma, J APPL PHYS, 87(10), 2000, pp. 7524-7532
Authors:
Houlet, L
Rhallabi, A
Turban, G
Citation: L. Houlet et al., Simulation of mesa structures for III-V semiconductors under ion beam etching, EPJ-APPL PH, 6(3), 1999, pp. 273-280
Authors:
Racine, B
Benlahsen, M
Zellama, K
Zarrabian, M
Villain, JP
Turban, G
Citation: B. Racine et al., Mechanical and tribological properties of diamond-like carbon coatings films deposited from an electron cyclotron resonance plasma, DIAM RELAT, 8(2-5), 1999, pp. 567-571
Authors:
Hong, JG
Turban, G
Citation: Jg. Hong et G. Turban, Etching process of hydrogenated amorphous carbon (a-C : H) thin films in adual ECR-r.f. nitrogen plasma, DIAM RELAT, 8(2-5), 1999, pp. 572-576
Authors:
Bhattacharyya, S
Vallee, C
Cardinaud, C
Turban, G
Citation: S. Bhattacharyya et al., Studies on structural properties of a-CN : H films prepared in electron cyclotron resonance plasma, DIAM RELAT, 8(2-5), 1999, pp. 586-590