ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

THE ATOMIC-STRUCTURE OF CO DIMERS IN SILICON

Authors: VANBAVEL AM LANGOUCHE G OVERHOF H

Citation: Am. Vanbavel et al., THE ATOMIC-STRUCTURE OF CO DIMERS IN SILICON, Semiconductor science and technology, 13(1), 1998, pp. 108-115

INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON

Authors: TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G STESMANS A CLAUWS P

Citation: Ma. Trauwaert et al., INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 196-199

MOSSBAUER-SPECTROSCOPY ON BENT SI CRYSTALS

Authors: VANBAVEL AM DEGROOTE S VANTOMME A LANGOUCHE G

Citation: Am. Vanbavel et al., MOSSBAUER-SPECTROSCOPY ON BENT SI CRYSTALS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(2-3), 1996, pp. 293-297

MOSSBAUER-SPECTROSCOPY OF FECL3-DOPED POLY(P-PHENYLENEVINYLENE) AND OF I-2-DOPED POLY(2,5-THIENYLENEVINYLENE)

Authors: BRIERS J EEVERS W DEWIT M GEISE HJ DOLIESLAGER W WAUTERS J VANBAVEL AM BEMELMANS H LANGOUCHE G

Citation: J. Briers et al., MOSSBAUER-SPECTROSCOPY OF FECL3-DOPED POLY(P-PHENYLENEVINYLENE) AND OF I-2-DOPED POLY(2,5-THIENYLENEVINYLENE), Journal of physical chemistry, 99(34), 1995, pp. 12971-12974

STRUCTURAL CHARACTERIZATION OF ION-BEAM SYNTHESIZED NISI2 LAYERS

Authors: WU MF DEWACHTER J VANBAVEL AM MOONS R VANTOMME A PATTYN H LANGOUCHE G BENDER H VANHELLEMONT J TEMST K BRUYNSERAEDE Y

Citation: Mf. Wu et al., STRUCTURAL CHARACTERIZATION OF ION-BEAM SYNTHESIZED NISI2 LAYERS, Journal of applied physics, 78(3), 1995, pp. 1707-1712

LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES

Authors: TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G CLAUWS P

Citation: Ma. Trauwaert et al., LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES, Applied physics letters, 66(22), 1995, pp. 3057-3058

GROWTH AND PROPERTIES OF ION-BEAM SYNTHESIZED SI COXNI1-XSI2/SI(111) STRUCTURES/

Authors: WU MF DEWACHTER J VANBAVEL AM PATTYN H LANGOUCHE G VANHELLEMONT J BENDER H TEMST K WUYTS B BRUYNSERAEDE Y

Citation: Mf. Wu et al., GROWTH AND PROPERTIES OF ION-BEAM SYNTHESIZED SI COXNI1-XSI2/SI(111) STRUCTURES/, Journal of applied physics, 75(2), 1994, pp. 1201-1203

ION-BEAM SYNTHESIS OF BURIED AND SURFACE NICKEL SILICIDES DURING A SINGLE IMPLANTATION STEP

Authors: WU MF DEWACHTER J PATTYN H VANBAVEL AM LANGOUCHE G VANHELLEMONT J BENDER H MAENHOUDT M BRUYNSERAEDE Y

Citation: Mf. Wu et al., ION-BEAM SYNTHESIS OF BURIED AND SURFACE NICKEL SILICIDES DURING A SINGLE IMPLANTATION STEP, Applied surface science, 73, 1993, pp. 246-252

MOSSBAUER SEARCH FOR CO-ACCEPTOR PAIRS IN SI

Authors: VANBAVEL AM BENNEBROEK M NEERINCK D LANGOUCHE G

Citation: Am. Vanbavel et al., MOSSBAUER SEARCH FOR CO-ACCEPTOR PAIRS IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 76(1-4), 1993, pp. 434-436

SIMULTANEOUS SYNTHESIS OF WELL-SEPARATED BURIED AND SURFACE SILICIDESUSING A SINGLE-ION IMPLANTATION STEP

Authors: WU MF DEWACHTER J HENDRICKX P VANBAVEL AM PATTYN H LANGOUCHE G VANHELLEMONT J BENDER H MAENHOUDT M BRUYNSERAEDE Y

Citation: Mf. Wu et al., SIMULTANEOUS SYNTHESIS OF WELL-SEPARATED BURIED AND SURFACE SILICIDESUSING A SINGLE-ION IMPLANTATION STEP, Applied physics letters, 63(4), 1993, pp. 542-544

IMPLANTATION TEMPERATURE-DEPENDENT DISTRIBUTION OF NISI2 FORMED BY ION-BEAM SYNTHESIS IN SILICON

Authors: VANHELLEMONT J BENDER H WU MF DEWACHTER J HENDRICKX P PATTYN H VANBAVEL AM LANGOUCHE G MAENHOUDT M BRUYNSERAEDE Y

Citation: J. Vanhellemont et al., IMPLANTATION TEMPERATURE-DEPENDENT DISTRIBUTION OF NISI2 FORMED BY ION-BEAM SYNTHESIS IN SILICON, Applied physics letters, 62(22), 1993, pp. 2795-2797

Risultati: 1-11 |