Authors:
TRAUWAERT MA
VANHELLEMONT J
MAES HE
VANBAVEL AM
LANGOUCHE G
STESMANS A
CLAUWS P
Citation: Ma. Trauwaert et al., INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 196-199
Authors:
VANBAVEL AM
DEGROOTE S
VANTOMME A
LANGOUCHE G
Citation: Am. Vanbavel et al., MOSSBAUER-SPECTROSCOPY ON BENT SI CRYSTALS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(2-3), 1996, pp. 293-297
Authors:
BRIERS J
EEVERS W
DEWIT M
GEISE HJ
DOLIESLAGER W
WAUTERS J
VANBAVEL AM
BEMELMANS H
LANGOUCHE G
Citation: J. Briers et al., MOSSBAUER-SPECTROSCOPY OF FECL3-DOPED POLY(P-PHENYLENEVINYLENE) AND OF I-2-DOPED POLY(2,5-THIENYLENEVINYLENE), Journal of physical chemistry, 99(34), 1995, pp. 12971-12974
Authors:
TRAUWAERT MA
VANHELLEMONT J
MAES HE
VANBAVEL AM
LANGOUCHE G
CLAUWS P
Citation: Ma. Trauwaert et al., LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES, Applied physics letters, 66(22), 1995, pp. 3057-3058
Authors:
WU MF
DEWACHTER J
VANBAVEL AM
PATTYN H
LANGOUCHE G
VANHELLEMONT J
BENDER H
TEMST K
WUYTS B
BRUYNSERAEDE Y
Citation: Mf. Wu et al., GROWTH AND PROPERTIES OF ION-BEAM SYNTHESIZED SI COXNI1-XSI2/SI(111) STRUCTURES/, Journal of applied physics, 75(2), 1994, pp. 1201-1203
Authors:
WU MF
DEWACHTER J
PATTYN H
VANBAVEL AM
LANGOUCHE G
VANHELLEMONT J
BENDER H
MAENHOUDT M
BRUYNSERAEDE Y
Citation: Mf. Wu et al., ION-BEAM SYNTHESIS OF BURIED AND SURFACE NICKEL SILICIDES DURING A SINGLE IMPLANTATION STEP, Applied surface science, 73, 1993, pp. 246-252
Authors:
VANBAVEL AM
BENNEBROEK M
NEERINCK D
LANGOUCHE G
Citation: Am. Vanbavel et al., MOSSBAUER SEARCH FOR CO-ACCEPTOR PAIRS IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 76(1-4), 1993, pp. 434-436
Authors:
WU MF
DEWACHTER J
HENDRICKX P
VANBAVEL AM
PATTYN H
LANGOUCHE G
VANHELLEMONT J
BENDER H
MAENHOUDT M
BRUYNSERAEDE Y
Citation: Mf. Wu et al., SIMULTANEOUS SYNTHESIS OF WELL-SEPARATED BURIED AND SURFACE SILICIDESUSING A SINGLE-ION IMPLANTATION STEP, Applied physics letters, 63(4), 1993, pp. 542-544
Authors:
VANHELLEMONT J
BENDER H
WU MF
DEWACHTER J
HENDRICKX P
PATTYN H
VANBAVEL AM
LANGOUCHE G
MAENHOUDT M
BRUYNSERAEDE Y
Citation: J. Vanhellemont et al., IMPLANTATION TEMPERATURE-DEPENDENT DISTRIBUTION OF NISI2 FORMED BY ION-BEAM SYNTHESIS IN SILICON, Applied physics letters, 62(22), 1993, pp. 2795-2797