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Results: 1-25/80
Authors:
KISSINGER G
VANHELLEMONT J
LAMBERT U
GRAF D
GRABOLLA T
RICHTER H
Citation: G. Kissinger et al., CONDITIONS FOR THE FORMATION OF RING-LIKE DISTRIBUTED STACKING-FAULTSIN CZ-SI WAFERS, JPN J A P 2, 37(3B), 1998, pp. 306-308
Authors:
FEDINA L
GUTAKOVSKII A
ASEEV A
VANLANDUYT J
VANHELLEMONT J
Citation: L. Fedina et al., ON THE MECHANISM OF (111)-DEFECT FORMATION IN SILICON STUDIED BY IN-SITU ELECTRON-IRRADIATION IN A HIGH-RESOLUTION ELECTRON-MICROSCOPE, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(2), 1998, pp. 423-435
Authors:
HOU FC
BOSMAN G
SIMOEN E
VANHELLEMONT J
CLAEYS C
Citation: Fc. Hou et al., BULK DEFECT-INDUCED LOW-FREQUENCY NOISE IN N(-P SILICON DIODES()), I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2528-2536
Authors:
KISSINGER G
VANHELLEMONT J
LAMBERT U
GRAF D
DORNBERGER E
RICHTER H
Citation: G. Kissinger et al., INFLUENCE OF RESIDUAL POINT-DEFECT SUPERSATURATION ON THE FORMATION OF GROWN-IN OXIDE PRECIPITATE NUCLEI IN CZ-SI, Journal of the Electrochemical Society, 145(5), 1998, pp. 75-78
Authors:
KISSINGER G
MORGENSTERN G
VANHELLEMONT J
GRAF D
LAMBERT U
RICHTER H
Citation: G. Kissinger et al., INTERNAL OXIDATION OF VACANCY AGGLOMERATES IN CZOCHRALSKI SILICON-WAFERS DURING HIGH-TEMPERATURE ANNEALS, Applied physics letters, 72(2), 1998, pp. 223-225
Authors:
BENDER H
VANHELLEMONT J
SCHMOLKE R
Citation: H. Bender et al., HIGH-RESOLUTION STRUCTURE IMAGING OF OCTAHEDRAL VOID DEFECTS IN AS-GROWN CZOCHRALSKI SILICON, JPN J A P 2, 36(9AB), 1997, pp. 1217-1220
Authors:
VANHELLEMONT J
MILITA S
SERVIDORI M
HIGGS V
KISSINGER G
GRAMENOVA E
SIMOEN E
JANSEN P
Citation: J. Vanhellemont et al., NONDESTRUCTIVE TECHNIQUES FOR IDENTIFICATION AND CONTROL OF PROCESSING INDUCED EXTENDED DEFECTS IN SILICON AND CORRELATION WITH DEVICE YIELD, Journal de physique. III, 7(7), 1997, pp. 1425-1433
Authors:
CLAEYS C
SIMOEN E
VANHELLEMONT J
Citation: C. Claeys et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF OXYGEN-PRECIPITATION INDUCED EXTENDED DEFECTS IN SILICON, Journal de physique. III, 7(7), 1997, pp. 1469-1486
Authors:
ARMIGLIATO A
BALBONI R
BENEDETTI A
FRABBONI S
TIXIER A
VANHELLEMONT J
Citation: A. Armigliato et al., STRAIN-MEASUREMENTS IN THIN-FILM STRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION, Journal de physique. III, 7(12), 1997, pp. 2375-2381
Authors:
SIMOEN E
VANHELLEMONT J
ALAERTS A
CLAEYS C
GAUBAS E
KANIAVA A
OHYAMA H
SUNAGA H
NAHSIYAMA I
SKORUPA W
Citation: E. Simoen et al., PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES, Radiation physics and chemistry, 50(5), 1997, pp. 417-422
Authors:
OHYAMA H
VANHELLEMONT J
TAKAMI Y
SUNAGA H
NASHIYAMA I
UWATOKO Y
POORTMANS J
CAYMAX M
Citation: H. Ohyama et al., DEGRADATION OF SIGE DEVICES BY PROTON IRRADIATION, Radiation physics and chemistry, 50(4), 1997, pp. 341-346
Authors:
JANSSENS KGF
VANDERBIEST O
VANHELLEMONT J
MAES HE
Citation: Kgf. Janssens et al., ASSESSMENT OF THE QUANTITATIVE CHARACTERIZATION OF LOCALIZED STRAIN USING ELECTRON-DIFFRACTION CONTRAST IMAGING, Ultramicroscopy, 69(3), 1997, pp. 151-167
Authors:
GAUBAS E
VANHELLEMONT J
SIMOEN E
CLAUWS P
KRANER HW
VILKELIS G
SMILGA AP
Citation: E. Gaubas et al., STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS, Semiconductor science and technology, 12(9), 1997, pp. 1092-1099
Authors:
VANHELLEMONT J
SENKADER S
KISSINGER G
HIGGS V
TRAUWAERT MA
GRAF D
LAMBERT U
WAGNER P
Citation: J. Vanhellemont et al., MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON, Journal of crystal growth, 180(3-4), 1997, pp. 353-362
Authors:
SEIFERT W
KITTLER M
VANHELLEMONT J
Citation: W. Seifert et al., EBIC STUDY OF RECOMBINATION ACTIVITY OF OXYGEN PRECIPITATION RELATED DEFECTS IN SI, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 260-264
Authors:
BORGHESI A
GOSELE U
VANHELLEMONT J
Citation: A. Borghesi et al., PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 9-9
Authors:
SIMOEN E
DUBUC JP
VANHELLEMONT J
CLAEYS C
Citation: E. Simoen et al., IMPACT OF THE STARTING INTERSTITIAL OXYGEN CONCENTRATION ON THE ELECTRICAL CHARACTERISTICS OF ELECTRON-IRRADIATED SI JUNCTION DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 179-182
Authors:
TRAUWAERT MA
VANHELLEMONT J
MAES HE
VANBAVEL AM
LANGOUCHE G
STESMANS A
CLAUWS P
Citation: Ma. Trauwaert et al., INFLUENCE OF OXYGEN AND CARBON ON THE GENERATION AND ANNIHILATION OF RADIATION DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 196-199
Authors:
KISSINGER G
VANHELLEMONT J
SIMOEN E
CLAEYS C
RICHTER H
Citation: G. Kissinger et al., INVESTIGATION OF OXYGEN PRECIPITATION RELATED CRYSTAL DEFECTS IN PROCESSED SILICON-WAFERS BY INFRARED LIGHT-SCATTERING TOMOGRAPHY, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 225-229
Authors:
SIMOEN E
VANHELLEMONT J
CLAEYS C
Citation: E. Simoen et al., THE LOW-FREQUENCY NOISE BEHAVIOR OF SI N(+)P JUNCTION DIODES FABRICATED ON (100) AND (111) SUBSTRATES, Physica. B, Condensed matter, 228(3-4), 1996, pp. 219-225
Authors:
SIMOEN E
VANHELLEMONT J
CLAEYS C
KANIAVA A
GAUBAS E
Citation: E. Simoen et al., THE RESPONSE OF SI P-N-JUNCTION DIODES TO PROTON IRRADIATION, Semiconductor science and technology, 11(10), 1996, pp. 1434-1442
Authors:
OHYAMA H
VANHELLEMONT J
TAKAMI Y
HAYAMA K
KUDOU T
KOHIKI S
SUNAGA H
HAKATA T
Citation: H. Ohyama et al., DEGRADATION OF INGAAS PIN PHOTODIODES BY NEUTRON-IRRADIATION, Semiconductor science and technology, 11(10), 1996, pp. 1461-1463
Authors:
CLAEYS C
SIMOEN E
VANHELLEMONT J
Citation: C. Claeys et al., PROCESS-INDUCED AND IRRADIATION-INDUCED DEFECTS IN SILICON DEVICES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 244-257
Authors:
FEDINA L
VANLANDUYT J
VANHELLEMONT J
ASEEV AL
Citation: L. Fedina et al., OBSERVATION OF VACANCY CLUSTERING IN FZ-SI CRYSTALS DURING IN-SITU ELECTRON-IRRADIATION IN A HIGH-VOLTAGE ELECTRON-MICROSCOPE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 133-138
Authors:
TONOVA D
DEPAS M
VANHELLEMONT J
Citation: D. Tonova et al., INTERPRETATION OF SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS OF ULTRATHIN DIELECTRIC LAYERS ON SILICON - IMPACT OF ACCURACY OF THE SILICON OPTICAL-CONSTANTS, Thin solid films, 288(1-2), 1996, pp. 64-68