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Results:
1-14
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Results: 14
Authors:
WHITEAKER KL
ROBINSON IK
VANNOSTRAND JE
CAHILL DG
Citation: Kl. Whiteaker et al., COMPOSITIONAL ORDERING IN SIGE ALLOY THIN-FILMS, Physical review. B, Condensed matter, 57(19), 1998, pp. 12410-12420
Authors:
VANNOSTRAND JE
CHEY SJ
CAHILL DG
Citation: Je. Vannostrand et al., LOW-TEMPERATURE GROWTH-MORPHOLOGY OF SINGULAR AND VICINAL GE(001), Physical review. B, Condensed matter, 57(19), 1998, pp. 12536-12543
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
VANNOSTRAND JE
JONES R
JENNY J
Citation: Dc. Reynolds et al., SOURCE OF THE YELLOW LUMINESCENCE BAND IN GAN GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY AND THE GREEN LUMINESCENCE BAND IN SINGLE-CRYSTAL ZNO, Solid state communications, 106(10), 1998, pp. 701-704
Authors:
VANNOSTRAND JE
CAHILL DG
PETROV I
GREENE JE
Citation: Je. Vannostrand et al., MORPHOLOGY AND MICROSTRUCTURE OF TENSILE-STRAINED SIGE(001) THIN EPITAXIAL-FILMS, Journal of applied physics, 83(2), 1998, pp. 1096-1102
Authors:
JENNY JR
VANNOSTRAND JE
KASPI R
Citation: Jr. Jenny et al., THE EFFECT OF AL ON GA DESORPTION DURING GAS SOURCE-MOLECULAR BEAM EPITAXIAL-GROWTH OF ALGAN, Applied physics letters, 72(1), 1998, pp. 85-87
Authors:
THEISBROHL K
RITLEY KA
FLYNN CP
VANNOSTRAND JE
CAHILL DG
HAMACHER K
KAISER H
RHYNE JJ
Citation: K. Theisbrohl et al., COEXISTENCE OF DIFFERENT MAGNETIC PHASES IN DY Y SUPERLATTICES CAUSEDBY GROWTH INDUCED NANOSTRUCTURES/, Journal of magnetism and magnetic materials, 166(1-2), 1997, pp. 27-37
Authors:
VANNOSTRAND JE
CHEY SJ
CAHILL DG
BOTCHKAREV AE
MORKOC H
Citation: Je. Vannostrand et al., SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY SOLID-SOURCE AND GAS-SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 346(1-3), 1996, pp. 136-144
Authors:
CHEY SJ
VANNOSTRAND JE
CAHILL DG
Citation: Sj. Chey et al., DYNAMICS OF ROUGH GE(001) SURFACES AT LOW-TEMPERATURES, Physical review letters, 76(21), 1996, pp. 3995-3998
Authors:
VANNOSTRAND JE
CHEY SJ
CAHILL DG
Citation: Je. Vannostrand et al., SURFACE-ROUGHNESS AND PATTERN-FORMATION DURING HOMOEPITAXIAL GROWTH OF GE(001) AT LOW-TEMPERATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1816-1819
Authors:
CHEY SJ
VANNOSTRAND JE
CAHILL DG
Citation: Sj. Chey et al., SURFACE-MORPHOLOGY OF GE(001) DURING ETCHING BY LOW-ENERGY IONS, Physical review. B, Condensed matter, 52(23), 1995, pp. 16696-16701
Authors:
BELLON P
CHEY SJ
VANNOSTRAND JE
GHALY M
CAHILL DG
AVERBACK RS
Citation: P. Bellon et al., SURFACE DAMAGE PRODUCED BY 20 KEV GA BOMBARDMENT OF GE(001), Surface science, 339(1-2), 1995, pp. 135-141
Authors:
REED J
TAO M
PARK DG
BOTCHKAREV A
FAN Z
SUZUE SK
LI D
GAO GB
MOHAMMAD SN
CHEY SJ
VANNOSTRAND JE
CAHILL DG
MORKOC H
Citation: J. Reed et al., CHARACTERISTICS OF IN-SITU DEPOSITED GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Solid-state electronics, 38(7), 1995, pp. 1351-1357
Authors:
VANNOSTRAND JE
CHEY SJ
HASAN MA
CAHILL DG
GREENE JE
Citation: Je. Vannostrand et al., SURFACE-MORPHOLOGY DURING MULTILAYER EPITAXIAL-GROWTH OF GE(001), Physical review letters, 74(7), 1995, pp. 1127-1130
Authors:
TAO M
BOTCHKAREV AE
PARK D
REED J
CHEY SJ
VANNOSTRAND JE
CAHILL DG
MORKOC H
Citation: M. Tao et al., IMPROVED SI3N4 SI/GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES BY IN-SITU ANNEAL OF THE AS-DEPOSITED SI/, Journal of applied physics, 77(8), 1995, pp. 4113-4115
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