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Results: 1-20 |
Results: 20
A 2ND IGG-BINDING PROTEIN IN STAPHYLOCOCCUS-AUREUS
Authors: ZHANG LH JACOBSSON K VASI J LINDBERG M FRYKBERG L
Citation: Lh. Zhang et al., A 2ND IGG-BINDING PROTEIN IN STAPHYLOCOCCUS-AUREUS, Microbiology, 144, 1998, pp. 985-991
A MONTE-CARLO APPROACH FOR INCORPORATION OF MEMORY EFFECT IN SWITCHEDGATE BIAS EXPERIMENTS
Authors: SUBBARAMAN S SHARMA DK VASI J DAS A
Citation: S. Subbaraman et al., A MONTE-CARLO APPROACH FOR INCORPORATION OF MEMORY EFFECT IN SWITCHEDGATE BIAS EXPERIMENTS, Journal of applied physics, 83(6), 1998, pp. 3419-3422
HIGH-FIELD STRESSING OF LPCVD GATE OXIDES
Authors: RAO VR EISELE I PATRIKAR RM SHARMA DK VASI J GRABOLLA T
Citation: Vr. Rao et al., HIGH-FIELD STRESSING OF LPCVD GATE OXIDES, IEEE electron device letters, 18(3), 1997, pp. 84-86
CHARGE TRAPPING BEHAVIOR IN DEPOSITED AND GROWN THIN METAL-OXIDE-SEMICONDUCTOR GATE DIELECTRICS
Authors: RAO VR HANSCH W BAUMGARTNER H EISELE I SHARMA DK VASI J GRABOLLA T
Citation: Vr. Rao et al., CHARGE TRAPPING BEHAVIOR IN DEPOSITED AND GROWN THIN METAL-OXIDE-SEMICONDUCTOR GATE DIELECTRICS, Thin solid films, 296(1-2), 1997, pp. 37-40
HIGH-FIELD STRESSING EFFECTS ON THE SPLIT N2O GROWN THIN GATE DIELECTRIC BY RAPID THERMAL-PROCESSING
Authors: SUBRAHMANYAM PVS PRABHAKAR A VASI J
Citation: Pvs. Subrahmanyam et al., HIGH-FIELD STRESSING EFFECTS ON THE SPLIT N2O GROWN THIN GATE DIELECTRIC BY RAPID THERMAL-PROCESSING, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 505-508
NEUTRAL ELECTRON TRAP GENERATION UNDER IRRADIATION IN REOXIDIZED NITRIDED GATE DIELECTRICS
Authors: RAO VR SHARMA DK VASI J
Citation: Vr. Rao et al., NEUTRAL ELECTRON TRAP GENERATION UNDER IRRADIATION IN REOXIDIZED NITRIDED GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1467-1470
INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES
Authors: PATRIKAR RM LAL R VASI J
Citation: Rm. Patrikar et al., INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES, Solid-state electronics, 38(2), 1995, pp. 477-480
CAPTURE CROSS-SECTION OF HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE MEASURED BY IRRADIATION
Authors: MALLIK A CHANDORKAR AN VASI J
Citation: A. Mallik et al., CAPTURE CROSS-SECTION OF HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE MEASURED BY IRRADIATION, Solid-state electronics, 38(10), 1995, pp. 1851-1853
DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD
Authors: TALWALKAR N DAS A VASI J
Citation: N. Talwalkar et al., DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD, Journal of applied physics, 78(7), 1995, pp. 4487-4489
IF YOU WANT TO EVALUATE YOUR LIBRARY, 2ND EDITION - LANCASTER,FW
Authors: VASI J
Citation: J. Vasi, IF YOU WANT TO EVALUATE YOUR LIBRARY, 2ND EDITION - LANCASTER,FW, The Journal of academic librarianship, 20(3), 1994, pp. 174-174
THE AMERICANS-WITH-DISABILITIES-ACT - ITS IMPACT ON LIBRARIES - THE LIBRARY RESPONSES IN DOABLE STEPS - CRISPEN,JL
Authors: VASI J
Citation: J. Vasi, THE AMERICANS-WITH-DISABILITIES-ACT - ITS IMPACT ON LIBRARIES - THE LIBRARY RESPONSES IN DOABLE STEPS - CRISPEN,JL, The Journal of academic librarianship, 20(1), 1994, pp. 32-33
A 2-DIMENSIONAL NUMERICAL-SIMULATION OF OXIDE CHARGE BUILDUP IN MOS-TRANSISTORS DUE TO RADIATION
Authors: VASUDEVAN V VASI J
Citation: V. Vasudevan et J. Vasi, A 2-DIMENSIONAL NUMERICAL-SIMULATION OF OXIDE CHARGE BUILDUP IN MOS-TRANSISTORS DUE TO RADIATION, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 383-390
NET POSITIVE-CHARGE BUILDUP IN VARIOUS MOS INSULATORS DUE TO HIGH-FIELD STRESSING
Authors: PATRIKAR RM LAL R VASI J
Citation: Rm. Patrikar et al., NET POSITIVE-CHARGE BUILDUP IN VARIOUS MOS INSULATORS DUE TO HIGH-FIELD STRESSING, IEEE electron device letters, 14(11), 1993, pp. 530-532
A STUDY OF RADIATION EFFECTS ON REOXIDIZED NITRIDED-OXIDE MOSFETS, INCLUDING EFFECTS ON MOBILITY
Authors: MALLIK A VASI J CHANDORKAR AN
Citation: A. Mallik et al., A STUDY OF RADIATION EFFECTS ON REOXIDIZED NITRIDED-OXIDE MOSFETS, INCLUDING EFFECTS ON MOBILITY, Solid-state electronics, 36(9), 1993, pp. 1359-1361
DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESS
Authors: PATRIKAR RM LAL R VASI J
Citation: Rm. Patrikar et al., DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESS, Journal of applied physics, 74(7), 1993, pp. 4598-4607
A SIMULATION OF THE MULTIPLE-TRAPPING MODEL FOR CONTINUOUS-TIME RANDOM-WALK TRANSPORT
Authors: VASUDEVAN V VASI J
Citation: V. Vasudevan et J. Vasi, A SIMULATION OF THE MULTIPLE-TRAPPING MODEL FOR CONTINUOUS-TIME RANDOM-WALK TRANSPORT, Journal of applied physics, 74(5), 1993, pp. 3224-3231
THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS
Authors: MALLIK A VASI J CHANDORKAR AN
Citation: A. Mallik et al., THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS, Journal of applied physics, 74(4), 1993, pp. 2665-2668
CARRIER MOBILITY DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS DUE TO OXIDE CHARGE
Authors: PHANSE A SHARMA D MALLIK A VASI J
Citation: A. Phanse et al., CARRIER MOBILITY DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS DUE TO OXIDE CHARGE, Journal of applied physics, 74(1), 1993, pp. 757-759
HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION
Authors: PATRIKAR RM LAL R VASI J
Citation: Rm. Patrikar et al., HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION, Journal of applied physics, 73(8), 1993, pp. 3857-3859
ELECTRON TRAPPING DURING IRRADIATION IN REOXIDIZED NITRIDED-OXIDE
Authors: MALLIK A VASI J CHANDORKAR AN
Citation: A. Mallik et al., ELECTRON TRAPPING DURING IRRADIATION IN REOXIDIZED NITRIDED-OXIDE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1380-1387
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