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Results: 1-10 |
Results: 10
FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM LI Z SCHMIDT B
Citation: Em. Verbitskaya et al., FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING, Semiconductors, 31(2), 1997, pp. 189-193
RAPID ANALYSIS OF A MIXTURE OF TRANSURANIC ELEMENTS
Authors: VERBITSKAYA EM EREMIN VK ILYASHENKO IN MALYARENKO AM RODIONOV YF STROKAN NB YASHIN YA
Citation: Em. Verbitskaya et al., RAPID ANALYSIS OF A MIXTURE OF TRANSURANIC ELEMENTS, Instruments and experimental techniques, 40(3), 1997, pp. 338-340
EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON
Authors: VERBITSKAYA EM EREMIN VE IVANOV AM STROKAN NB
Citation: Em. Verbitskaya et al., EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON, Semiconductors, 27(7), 1993, pp. 612-616
CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON()
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB
Citation: Em. Verbitskaya et al., CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON(), Semiconductors, 27(2), 1993, pp. 115-119
PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS
Authors: VERBITSKAYA EM EREMIN VK MALYARENKO AM STROKAN NB SUKHANOV VL SCHMIDT B VONBORANY J
Citation: Em. Verbitskaya et al., PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS, Semiconductors, 27(11-12), 1993, pp. 1127-1136
ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB LI Z SCHMIDT B
Citation: Em. Verbitskaya et al., ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON, Semiconductors, 27(11-12), 1993, pp. 1136-1140
DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS (VOL 19, PG 42, 1993)
Authors: VERBITSKAYA EM
Citation: Em. Verbitskaya, DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS (VOL 19, PG 42, 1993), Pis'ma v Zurnal tehniceskoj fiziki, 19(22), 1993, pp. 94-94
DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS
Authors: VERBITSKAYA EM EREMIN VK MALYARENKO AM RODIONOV YF STROKAN NB YASHIN YA
Citation: Em. Verbitskaya et al., DETERMINATION OF THE MIXTURE COMPOSITION OF TRANSURANIUM NUCLIDES BY SPECTRA OF ALPHA-DECAY USING PRECISION SI DETECTORS, Pis'ma v Zurnal tehniceskoj fiziki, 19(12), 1993, pp. 42-46
ANALYSIS OF DEFECT DISTRIBUTION IN YBA2CU 307 EPITAXIAL-FILMS BY THE ION CHANNELING METHOD
Authors: VERBITSKAYA EM EREMIN VK KOBZEV AP KONNIKOV SG STROKAN NB SHIROKOV DM
Citation: Em. Verbitskaya et al., ANALYSIS OF DEFECT DISTRIBUTION IN YBA2CU 307 EPITAXIAL-FILMS BY THE ION CHANNELING METHOD, Zurnal tehniceskoj fiziki, 63(5), 1993, pp. 111-116
HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING METHOD FOR ASSESSING HIGH-T(C) STRUCTURES
Authors: VERBITSKAYA EM EREMIN VK KONNIKOV SG STROKAN NB BORTNYANSKII AL KLOPENKOV ML PAVLOVETS MV AFONIN OF VIKTOROV BV
Citation: Em. Verbitskaya et al., HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING METHOD FOR ASSESSING HIGH-T(C) STRUCTURES, Instruments and experimental techniques, 36(6), 1993, pp. 922-926
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