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Results: 1-11 |
Results: 11
DEFECT LEVELS IN N-SILICON AFTER HIGH-ENERGY AND HIGH-DOSE IMPLANTATION OF PROTON
Authors: BARBOT JF BLANCHARD C NTSOENZOK E VERNOIS J
Citation: Jf. Barbot et al., DEFECT LEVELS IN N-SILICON AFTER HIGH-ENERGY AND HIGH-DOSE IMPLANTATION OF PROTON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 81-84
COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES
Authors: NTSOENZOK E DESGARDIN P BARBOT JF VERNOIS J ISABELLE DB
Citation: E. Ntsoenzok et al., COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 154-157
BEAM SCANNING SYSTEM FOR THE UNIFORMITY OF IMPLANTED DOSES IN A LARGE-AREA
Authors: DESGARDIN P NTSOENZOK E BARBOT JF BRIAUD J VERNOIS J ISABELLE DB
Citation: P. Desgardin et al., BEAM SCANNING SYSTEM FOR THE UNIFORMITY OF IMPLANTED DOSES IN A LARGE-AREA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 267-269
EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON
Authors: NTSOENZOK E DESGARDIN P SAILLARD M VERNOIS J BARBOT JF
Citation: E. Ntsoenzok et al., EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON, Journal of applied physics, 79(11), 1996, pp. 8274-8277
PHARMACOKINETICS OF PROPOFOL AFTER A SINGLE-DOSE IN CHILDREN AGED 1-3YEARS WITH MINOR BURNS - COMPARISON OF 3 DATA-ANALYSIS APPROACHES
Authors: MURAT I BILLARD V VERNOIS J ZAOUTER M MARSOL P SOURON R FARINOTTI R
Citation: I. Murat et al., PHARMACOKINETICS OF PROPOFOL AFTER A SINGLE-DOSE IN CHILDREN AGED 1-3YEARS WITH MINOR BURNS - COMPARISON OF 3 DATA-ANALYSIS APPROACHES, Anesthesiology, 84(3), 1996, pp. 526-532
EFFICIENCY OF THE CHANNEL ELECTRON MULTIPLIER FOR LOW-ENERGY PB-205 IONS
Authors: KRCMAR K KRECAK Z LJUBICIC A LOGAN BA ISABELLE DB VERNOIS J
Citation: K. Krcmar et al., EFFICIENCY OF THE CHANNEL ELECTRON MULTIPLIER FOR LOW-ENERGY PB-205 IONS, Applied radiation and isotopes, 46(6-7), 1995, pp. 477-478
EXPERIMENTAL ESTIMATION OF THE POPULATION OF THE FIRST EXCITED-LEVEL IN PB-205 ACCOMPANYING ALPHA-DECAY OF PO-209
Authors: KRECAK Z KRCMAR M LJUBICIC A LOGAN BA ISABELLE DB VERNOIS J
Citation: Z. Krecak et al., EXPERIMENTAL ESTIMATION OF THE POPULATION OF THE FIRST EXCITED-LEVEL IN PB-205 ACCOMPANYING ALPHA-DECAY OF PO-209, Applied radiation and isotopes, 46(6-7), 1995, pp. 547-548
AN ORIGINAL PREPARATION METHOD OF XE-127
Authors: MOUADILIA A VERNOIS J ISABELLE DB
Citation: A. Mouadilia et al., AN ORIGINAL PREPARATION METHOD OF XE-127, Applied radiation and isotopes, 46(6-7), 1995, pp. 597-598
DEFECT LEVEL OF PROTON-IRRADIATED SILICON WITH DOSES RANGING FROM 1X10(12) CM(-2) TO 1X10(13) CM(-2)
Authors: BARBOT JF NTSOENZOK E BLANCHARD C VERNOIS J ISABELLE DB
Citation: Jf. Barbot et al., DEFECT LEVEL OF PROTON-IRRADIATED SILICON WITH DOSES RANGING FROM 1X10(12) CM(-2) TO 1X10(13) CM(-2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(2), 1995, pp. 213-218
MEASUREMENT OF THE HALF-LIFE OF THE FIRST EXCITED-STATE OF PB-205
Authors: KRECAK Z KRCMAR M LJUBICIC A LOGAN BA ISABELLE DB VERNOIS J
Citation: Z. Krecak et al., MEASUREMENT OF THE HALF-LIFE OF THE FIRST EXCITED-STATE OF PB-205, Physical review. C. Nuclear physics, 50(3), 1994, pp. 1319-1320
STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS
Authors: NTSOENZOK E BARBOT JF DESGARDIN P VERNOIS J BLANCHARD C ISABELLE DB
Citation: E. Ntsoenzok et al., STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1932-1936
Risultati: 1-11 |