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Results:
1-19
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Results: 19
Authors:
HELLOUIN Y
VIKTOROVITCH P
Citation: Y. Hellouin et P. Viktorovitch, IMPROVEMENT OF THE PHOTOLUMINESCENCE DEAD LAYER MODEL IN III-V SEMICONDUCTORS, JPN J A P 1, 37(2), 1998, pp. 466-470
Authors:
SPISSER A
LEDANTEC R
SEASSAL C
LECLERCQ JL
BENYATTOU T
RONDI D
BLONDEAU R
GUILLOT G
VIKTOROVITCH P
Citation: A. Spisser et al., HIGHLY SELECTIVE AND WIDELY TUNABLE 1.55-MU-M INP AIR-GAP MICROMACHINED FABRY-PEROT FILTER FOR OPTICAL COMMUNICATIONS/, IEEE photonics technology letters, 10(9), 1998, pp. 1259-1261
Authors:
RIBAS RP
LECLERCQ JL
KARAM JM
COURTOIS B
VIKTOROVITCH P
Citation: Rp. Ribas et al., BULK MICROMACHINING CHARACTERIZATION OF 0.2 MU-M HEMT MMIC TECHNOLOGYFOR GAAS MEMS DESIGN, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 267-273
Authors:
LECLERCQ JL
RIBAS RP
KARAM JM
VIKTOROVITCH P
Citation: Jl. Leclercq et al., III-V MICROMACHINED DEVICES FOR MICROSYSTEMS, Microelectronics, 29(9), 1998, pp. 613-619
Authors:
SPISSER A
LEDANTEC R
SEASSAL C
LECLERCQ JL
BENYATTOU T
RONDI D
BLONDEAU R
GUILLOT G
VIKTOROVITCH P
Citation: A. Spisser et al., HIGHLY SELECTIVE 1.55-MU-M INP AIR GAP MICROMACHINED FABRY-PEROT FILTER FOR OPTICAL COMMUNICATIONS/, Electronics Letters, 34(5), 1998, pp. 453-455
Authors:
SEASSAL C
LECLERCQ JL
FIERLING G
LETARTRE X
GENDRY M
VIKTOROVITCH P
BERTIC Y
TROUILLET A
CACHARD A
BENECH P
LAINE JP
SIDOROFF F
Citation: C. Seassal et al., INP-BASED MICROMACHINED MACH-ZEHNDER INTERFEROMETER STRESS SENSORS, Microsystem technologies, 3(3), 1997, pp. 139-144
Authors:
MEVAA C
LETARTRE X
ROJOROMEO P
VIKTOROVITCH P
Citation: C. Mevaa et al., LOW-TEMPERATURE MBE GROWN ALINAS - INVESTIGATION OF CURRENT-VOLTAGE AND LOW-FREQUENCY NOISE BEHAVIOR OF SCHOTTKY DIODES, Solid-state electronics, 41(6), 1997, pp. 857-864
Authors:
RINCON R
PRIESTER C
FIERLING G
LETARTRE X
VIKTOROVITCH P
Citation: R. Rincon et al., PIEZOELECTRIC EFFECT IN MICROMACHINED [001] QUANTUM-WELLS - THEORETICAL ASPECTS, Microelectronics, 28(8-10), 1997, pp. 1031-1035
Authors:
FIERLING G
BUCHHEIT M
LETARTRE X
GENDRY M
VIKTOROVITCH P
SIDOROFF F
LAINE JP
Citation: G. Fierling et al., MECHANICAL RELAXATION OF STRAINED SEMICONDUCTING STRIPES - INFLUENCE ON OPTOELECTRONIC PROPERTIES, Applied physics letters, 71(11), 1997, pp. 1516-1518
Authors:
SEASSAL C
LECLERCQ JL
VIKTOROVITCH P
Citation: C. Seassal et al., FABRICATION OF INP-BASED FREESTANDING MICROSTRUCTURES BY SELECTIVE SURFACE MICROMACHINING, Journal of micromechanics and microengineering, 6(2), 1996, pp. 261-265
Authors:
TARDY J
ROJOROMEO P
VIKTOROVITCH P
CREMILLIEU P
LETARTRE X
Citation: J. Tardy et al., STABILITY AND NOISE OF PD-GE-AG-AU OHMIC CONTACTS TO INGAAS-INALAS HIGH-ELECTRON-MOBILITY TRANSISTORS, Solid-state electronics, 39(2), 1996, pp. 225-229
Authors:
BESLAND MP
JOURBA S
LAMBRINOS M
LOUIS P
VIKTOROVITCH P
HOLLINGER G
Citation: Mp. Besland et al., OPTIMIZED SIO2 INP STRUCTURES PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA/, Journal of applied physics, 80(5), 1996, pp. 3100-3109
Authors:
DROUOT V
GENDRY M
SANTINELLI C
LETARTE X
TARDY J
VIKTOROVITCH P
HOLLINGER G
AMBRI M
PITAVAL M
Citation: V. Drouot et al., DESIGN AND GROWTH INVESTIGATIONS OF STRAINED INXGA1-XAS INALAS/INP HETEROSTRUCTURES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATION/, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1326-1335
Authors:
VIKTOROVITCH P
ROJOROMEO P
LECLERCQ JL
LETARTRE X
TARDY J
OUSTRIC M
GENDRY M
Citation: P. Viktorovitch et al., LOW-FREQUENCY NOISE SOURCES IN INALAS INGAAS MODFETS/, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2085-2100
Authors:
VIKTOROVITCH P
TARDY J
Citation: P. Viktorovitch et J. Tardy, MICROELECTRONICS AND OPTOELECTRONICS III-V (5) - FOREWORD, Journal de physique. III, 5(5), 1995, pp. 2-2
Authors:
VIKTOROVITCH P
LOUIS P
BESLAND MP
CHOVET A
Citation: P. Viktorovitch et al., ELECTRICAL CHARACTERIZATION OF METAL-OXIDE INP TUNNEL-DIODES BASED ONCURRENT-VOLTAGE, ADMITTANCE AND LOW-FREQUENCY NOISE MEASUREMENTS, Solid-state electronics, 38(5), 1995, pp. 1035-1043
Authors:
DROUOT V
GENDRY M
SANTINELLI C
VIKTOROVITCH P
HOLLINGER G
ELLEUCH S
PELOUARD JL
Citation: V. Drouot et al., HIGH-ELECTRON-MOBILITY IN PSEUDOMORPHIC MODULATION-DOPED IN0.75GA0.25AS INALAS HETEROSTRUCTURES ACHIEVED WITH GROWTH INTERRUPTIONS/, Journal of applied physics, 77(4), 1995, pp. 1810-1812
Authors:
LECLERCQ JL
VIKTOROVITCH P
LETARTRE X
NUBAN MF
GENDRY M
BENYATTOU T
GUILLOT G
FIERLING G
PRIESTER C
Citation: Jl. Leclercq et al., LATERAL BAND-GAP MODULATION BY CONTROLLED ELASTIC RELAXATION OF STRAINED MULTIQUANTUM-WELL STRUCTURES ON INP, Applied physics letters, 67(9), 1995, pp. 1301-1303
Authors:
TABATA A
BENYATTOU T
GUILLOT G
GENDRY M
HOLLINGER G
VIKTOROVITCH P
Citation: A. Tabata et al., OPTICAL-PROPERTIES OF INAS INP SURFACE-LAYERS FORMED DURING THE ARSENIC STABILIZATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2299-2304
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