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Results: 1-17 |
Results: 17
SHALLOW DONORS IN EPITAXIAL GAN
Authors: FISCHER S VOLM D KOVALEV D AVERBOUKH B GRABER A ALT HC MEYER BK
Citation: S. Fischer et al., SHALLOW DONORS IN EPITAXIAL GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 192-195
RELAXATION OF INTERFACIAL STRESS AND IMPROVED QUALITY OF HETEROEPITAXIAL 3C-SIC FILMS ON (100)SI DEPOSITED BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION AT 1200-DEGREES-C
Authors: VEPREK S KUNSTMANN T VOLM D MEYER BK
Citation: S. Veprek et al., RELAXATION OF INTERFACIAL STRESS AND IMPROVED QUALITY OF HETEROEPITAXIAL 3C-SIC FILMS ON (100)SI DEPOSITED BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION AT 1200-DEGREES-C, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 10-17
STRUCTURAL AND OPTICAL ANALYSIS OF EPITAXIAL GAN ON SAPPHIRE
Authors: STRAUB U TEWS H RIECHERT H AVERBECK R SCHIENLE M JOBST B VOLM D STREIBL T MEYER BK RUHLE WW
Citation: U. Straub et al., STRUCTURAL AND OPTICAL ANALYSIS OF EPITAXIAL GAN ON SAPPHIRE, Semiconductor science and technology, 12(5), 1997, pp. 637-644
DYNAMICAL STUDY OF THE YELLOW LUMINESCENCE BAND IN GAN
Authors: HOFFMANN A ECKEY L MAXIM P HOLST JC HEITZ R HOFMANN DM KOVALEV D STEVDE G VOLM D MEYER BK DETCHPROHM T HIRAMATSU K AMANO H AKASAKI I
Citation: A. Hoffmann et al., DYNAMICAL STUDY OF THE YELLOW LUMINESCENCE BAND IN GAN, Solid-state electronics, 41(2), 1997, pp. 275-278
EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC
Authors: SON NT SORMAN E CHEN WM BERGMAN JP HALLIN C KORDINA O KONSTANTINOV AO MONEMAR B JANZEN E HOFMANN DM VOLM D MEYER BK
Citation: Nt. Son et al., EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC, Journal of applied physics, 81(4), 1997, pp. 1929-1932
OPTICAL INVESTIGATION OF DEEP DEFECTS IN GAN EPITAXIAL LAYERS GROWN ON 6H-SIC
Authors: PRESSEL K NILSSON S WETZEL C VOLM D MEYER BK LOA I THURIAN P HEITZ R HOFFMANN A MOKHOV EN BARANOV PG
Citation: K. Pressel et al., OPTICAL INVESTIGATION OF DEEP DEFECTS IN GAN EPITAXIAL LAYERS GROWN ON 6H-SIC, Materials science and technology, 12(1), 1996, pp. 90-93
FREE-EXCITON EMISSION IN GAN
Authors: KOVALEV D AVERBOUKH B VOLM D MEYER BK AMANO H AKASAKI I
Citation: D. Kovalev et al., FREE-EXCITON EMISSION IN GAN, Physical review. B, Condensed matter, 54(4), 1996, pp. 2518-2522
EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS
Authors: VOLM D OETTINGER K STREIBL T KOVALEV D BENCHORIN M DIENER J MEYER BK MAJEWSKI J ECKEY L HOFFMANN A AMANO H AKASAKI I HIRAMATSU K DETCHPROHM T
Citation: D. Volm et al., EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16543-16550
DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC
Authors: VOLM D MEYER BK HOFMANN DM CHEN WM SON NT PERSSON C LINDEFELT U KORDINA O SORMAN E KONSTANTINOV AO MONEMAR B JANZEN E
Citation: D. Volm et al., DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC, Physical review. B, Condensed matter, 53(23), 1996, pp. 15409-15412
ELECTRON MOBILITIES IN MOVPE-GROWN ZNSE QUANTUM-WELLS
Authors: DRECHSLER M HOFMANN DM VOLM D STADLER W STEUDE G MEYER BK TAUDT W SOLLNER J HEUKEN M
Citation: M. Drechsler et al., ELECTRON MOBILITIES IN MOVPE-GROWN ZNSE QUANTUM-WELLS, Journal of crystal growth, 159(1-4), 1996, pp. 410-413
ELECTRON-PARAMAGNETIC-RESONANCE IDENTIFICATION OF AN FE-AG PAIR IN CDTE
Authors: CHRISTMANN P VOLM D MEYER BK SCHNEIDER J SINERIUS D BENZ KW
Citation: P. Christmann et al., ELECTRON-PARAMAGNETIC-RESONANCE IDENTIFICATION OF AN FE-AG PAIR IN CDTE, Semiconductor science and technology, 10(3), 1995, pp. 290-294
MAGNETOOPTICAL, INVESTIGATION OF THE NEUTRAL DONOR BOUND EXCITON IN GAN
Authors: VOLM D STREIBL T MEYER BK DETCHPROHM T AMANO H AKASAKI I
Citation: D. Volm et al., MAGNETOOPTICAL, INVESTIGATION OF THE NEUTRAL DONOR BOUND EXCITON IN GAN, Solid state communications, 96(2), 1995, pp. 53-56
SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS
Authors: MEYER BK VOLM D GRABER A ALT HC DETCHPROHM T AMANO A AKASAKI I
Citation: Bk. Meyer et al., SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS, Solid state communications, 95(9), 1995, pp. 597-600
ELECTRON EFFECTIVE MASSES IN 4H SIC
Authors: SON NT CHEN WM KORDINA O KONSTANTINOV AO MONEMAR B JANZEN E HOFMAN DM VOLM D DRECHSLER M MEYER BK
Citation: Nt. Son et al., ELECTRON EFFECTIVE MASSES IN 4H SIC, Applied physics letters, 66(9), 1995, pp. 1074-1076
ACCEPTOR LEVEL OF SUBSTITUTIONAL NI IN DIAMOND
Authors: HOFMANN DM LUDWIG M CHRISTMANN P VOLM D MEYER BK PEREIRA L SANTOS L PEREIRA E
Citation: Dm. Hofmann et al., ACCEPTOR LEVEL OF SUBSTITUTIONAL NI IN DIAMOND, Physical review. B, Condensed matter, 50(23), 1994, pp. 17618-17620
GAN EPITAXIAL LAYERS GROWN ON 6H-SIC BY THE SUBLIMATION SANDWICH TECHNIQUE
Authors: WETZEL C VOLM D MEYER BK PRESSEL K NILSSON S MOKHOV EN BARANOV PG
Citation: C. Wetzel et al., GAN EPITAXIAL LAYERS GROWN ON 6H-SIC BY THE SUBLIMATION SANDWICH TECHNIQUE, Applied physics letters, 65(8), 1994, pp. 1033-1035
EVIDENCE FOR A VACANCY-RELATED GROUND-STATE OF THE DX CENTER IN ALXGA1-XSB - A POSITRON-ANNIHILATION STUDY
Authors: KRAUSEREHBERG R DROST T POLITY A ROOS G PENSL G VOLM D MEYER BK BISCHOPINK G BENZ KW
Citation: R. Krauserehberg et al., EVIDENCE FOR A VACANCY-RELATED GROUND-STATE OF THE DX CENTER IN ALXGA1-XSB - A POSITRON-ANNIHILATION STUDY, Physical review. B, Condensed matter, 48(16), 1993, pp. 11723-11725
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