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Results: 1-25/32
Authors:
Clarysse, T
Eyben, P
Hantschel, T
Vandervorst, W
Citation: T. Clarysse et al., Towards sub-10 nm carrier profiling with spreading resistance techniques, MAT SC S PR, 4(1-3), 2001, pp. 61-66
Authors:
Hantschel, T
Slesazeck, S
Niedermann, P
Eyben, P
Vandervorst, W
Citation: T. Hantschel et al., Integrating diamond pyramids into metal cantilevers and using them as electrical AFM probes, MICROEL ENG, 57-8, 2001, pp. 749-754
Authors:
Serrano, JJ
Blanco, JM
Guzman, B
De Witte, H
Vandervorst, W
Citation: Jj. Serrano et al., Steady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 keV per atom, J APPL PHYS, 90(9), 2001, pp. 4456-4466
Authors:
Loo, R
Meunier-Beillard, P
Vanhaeren, D
Bender, H
Caymax, M
Vandervorst, W
Dentel, D
Goryll, M
Vescan, L
Citation: R. Loo et al., Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor, J APPL PHYS, 90(5), 2001, pp. 2565-2574
Authors:
Serrano, JJ
De Witte, H
Vandervorst, W
Guzman, B
Blanco, JM
Citation: Jj. Serrano et al., Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization, J APPL PHYS, 89(9), 2001, pp. 5191-5198
Authors:
De Witte, H
Vandervorst, W
Gijbels, R
Citation: H. De Witte et al., Modeling of bombardment induced oxidation of silicon, J APPL PHYS, 89(5), 2001, pp. 3001-3011
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Maex, K
Bender, H
Brijs, B
Vandervorst, W
Citation: C. Detavernier et al., Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer, J APPL PHYS, 89(4), 2001, pp. 2146-2150
Authors:
Rajendran, K
Schoenmaker, W
Decoutere, S
Loo, R
Caymax, M
Vandervorst, W
Citation: K. Rajendran et al., Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers, IEEE DEVICE, 48(9), 2001, pp. 2022-2031
Authors:
Clarysse, T
Vandervorst, W
Citation: T. Clarysse et W. Vandervorst, Qualification of spreading resistance probe operations. I, J VAC SCI B, 18(1), 2000, pp. 369-380
Authors:
Clarysse, T
Vandervorst, W
Citation: T. Clarysse et W. Vandervorst, Qualification of spreading resistance probe operations. II, J VAC SCI B, 18(1), 2000, pp. 381-388
Authors:
Clarysse, T
Vandervorst, W
Citation: T. Clarysse et W. Vandervorst, Need to incorporate the real micro-contact distribution in spreading resistance correction schemes, J VAC SCI B, 18(1), 2000, pp. 393-400
Authors:
Stephenson, R
Verhulst, A
De Wolf, P
Caymax, M
Vandervorst, W
Citation: R. Stephenson et al., Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples, J VAC SCI B, 18(1), 2000, pp. 405-408
Authors:
Trenkler, T
Hantschel, T
Stephenson, R
De Wolf, P
Vandervorst, W
Hellemans, L
Malave, A
Buchel, D
Oesterschulze, E
Kulisch, W
Niedermann, P
Sulzbach, T
Ohlsson, O
Citation: T. Trenkler et al., Evaluating probes for "electrical" atomic force microscopy, J VAC SCI B, 18(1), 2000, pp. 418-427
Authors:
De Wolf, P
Vandervorst, W
Smith, H
Khalil, N
Citation: P. De Wolf et al., Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling, J VAC SCI B, 18(1), 2000, pp. 540-544
Authors:
Stephenson, R
De Wolf, P
Trenkler, T
Hantschel, T
Clarysse, T
Jansen, P
Vandervorst, W
Citation: R. Stephenson et al., Practicalities and limitations of scanning capacitance microscopy for routine integrated circuit characterization, J VAC SCI B, 18(1), 2000, pp. 555-559
Authors:
Trenkler, T
Stephenson, R
Jansen, P
Vandervorst, W
Hellemans, L
Citation: T. Trenkler et al., New aspects of nanopotentiometry for complementary metal-oxide-semiconductor transistors, J VAC SCI B, 18(1), 2000, pp. 586-594
Authors:
Vlekken, J
D'Olieslaeger, M
Knuyt, G
Vandervorst, W
De Schepper, L
Citation: J. Vlekken et al., Investigation of the formation process of MCs+-molecular ions during sputtering, J AM SOC M, 11(7), 2000, pp. 650-658
Authors:
Brijs, B
Deleu, J
Conard, T
De Witte, H
Vandervorst, W
Nakajima, K
Kimura, K
Genchev, I
Bergmaier, A
Goergens, L
Neumaier, P
Dollinger, G
Dobeli, M
Citation: B. Brijs et al., Characterization of ultra thin oxynitrides: A general approach, NUCL INST B, 161, 2000, pp. 429-434
Authors:
De Witte, H
Conard, T
Vandervorst, W
Gijbels, R
Citation: H. De Witte et al., SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding, SURF INT AN, 29(11), 2000, pp. 761-765
Authors:
Clarysse, T
Vandervorst, W
Collart, EJH
Murrell, AJ
Citation: T. Clarysse et al., Electrical characterization of ultrashallow dopant profiles, J ELCHEM SO, 147(9), 2000, pp. 3569-3574
Authors:
De Witte, H
De Gendt, S
Douglas, M
Conard, T
Kenis, K
Mertens, PW
Vandervorst, W
Gijbels, R
Citation: H. De Witte et al., Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on Si wafer surfaces, J ELCHEM SO, 147(5), 2000, pp. 1915-1919
Authors:
Loo, R
Caymax, M
Libezny, M
Blavier, G
Brijs, B
Geenen, L
Vandervorst, W
Citation: R. Loo et al., Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques, J ELCHEM SO, 147(2), 2000, pp. 751-755
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Maex, K
Vandervorst, W
Brijs, B
Citation: C. Detavernier et al., Influence of Ti on CoSi2 nucleation, APPL PHYS L, 77(20), 2000, pp. 3170-3172
Authors:
Hantschel, T
Niedermann, P
Trenkler, T
Vandervorst, W
Citation: T. Hantschel et al., Highly conductive diamond probes for scanning spreading resistance microscopy, APPL PHYS L, 76(12), 2000, pp. 1603-1605
Authors:
Vlekken, J
Croes, K
Wu, TD
D'Olieslaeger, M
Knuyt, G
Vandervorst, W
De Schepper, L
Citation: J. Vlekken et al., Investigation of the formation of M-2(+)-molecular ions in sputtering processes, J AM SOC M, 10(3), 1999, pp. 246-253