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Results: 1-12 |
Results: 12

Authors: Kalitzova, M Zollo, G Yankov, R Angelov, C Simov, S Pizzuto, C Faure, J Kilian, L Bonhomme, P Manno, D Voelskow, M Vitali, G
Citation: M. Kalitzova et al., Ion-beam-assisted nanocrystal formation in silicon implanted with high doses of Pb+ and Bi+ ions, JPN J A P 1, 40(10), 2001, pp. 5841-5849

Authors: Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Voelskow, M Scharmann, F Pezoldt, J
Citation: Pv. Rybin et al., Theoretical and experimental investigations of defect evolution in siliconcarbide during N+ and Al+ ion implantation taking into account internal stress fields, NUCL INST B, 178, 2001, pp. 269-274

Authors: Kachurin, GA Rebohle, L Tyschenko, IE Volodin, VA Voelskow, M Skorupa, W Froeb, H
Citation: Ga. Kachurin et al., Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions, SEMICONDUCT, 34(1), 2000, pp. 21-26

Authors: Teichert, J Bischoff, L Hausmann, S Voelskow, M Hobert, H
Citation: J. Teichert et al., Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation, APPL PHYS A, 71(2), 2000, pp. 175-180

Authors: Pezoldt, J Rybin, PV Kulikov, DV Trushin, YV Yankov, RA Voelskow, M Kreissig, U
Citation: J. Pezoldt et al., The influence of the implantation sequence on the (SiC)(1-x)(AlN)(x) formation, NUCL INST B, 166, 2000, pp. 758-763

Authors: Hausmann, S Bischoff, L Teichert, J Voelskow, M Moller, W
Citation: S. Hausmann et al., Dwell-time related effects in focused ion beam synthesis of cobalt disilicide, J APPL PHYS, 87(1), 2000, pp. 57-62

Authors: Hausmann, S Bischoff, L Teichert, J Voelskow, M Moller, W
Citation: S. Hausmann et al., Single-crystalline CoSi2 layer formation by focused ion beam synthesis, JPN J A P 1, 38(12B), 1999, pp. 7148-7150

Authors: Anwand, W Brauer, G Coleman, PG Voelskow, M Skorupa, W
Citation: W. Anwand et al., Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering, APPL SURF S, 149(1-4), 1999, pp. 148-150

Authors: Hausmann, S Bischoff, L Voelskow, M Teichert, J Moller, W Fuhrmann, H
Citation: S. Hausmann et al., Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements, NUCL INST B, 148(1-4), 1999, pp. 610-614

Authors: Pezoldt, J Yankov, RA Mucklich, A Fukarek, W Voelskow, M Reuther, H Skorupa, W
Citation: J. Pezoldt et al., A novel (SiC)(1-x)(AlN)(x) compound synthesized using ion beams, NUCL INST B, 147(1-4), 1999, pp. 273-278

Authors: Bischoff, L Hausmann, S Voelskow, M Teichert, J
Citation: L. Bischoff et al., Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi2, NUCL INST B, 147(1-4), 1999, pp. 327-331

Authors: Heera, V Stoemenos, J Kogler, R Voelskow, M Skorupa, W
Citation: V. Heera et al., Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures, J APPL PHYS, 85(3), 1999, pp. 1378-1386
Risultati: 1-12 |