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Results: 1-10 |
Results: 10
Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress
Authors: Wang, B Suehle, JS Vogel, EM Bernstein, JB
Citation: B. Wang et al., Time-dependent breakdown of ultra-thin SiO2 gate dielectrics under pulsed biased stress, IEEE ELEC D, 22(5), 2001, pp. 224-226
A comparison of quantum-mechanical capacitance-voltage simulators
Authors: Richter, CA Hefner, AR Vogel, EM
Citation: Ca. Richter et al., A comparison of quantum-mechanical capacitance-voltage simulators, IEEE ELEC D, 22(1), 2001, pp. 35-37
Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress
Authors: Vogel, EM Edelstein, MD Suehle, JS
Citation: Em. Vogel et al., Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress, MICROEL ENG, 59(1-4), 2001, pp. 73-83
Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection
Authors: Vogel, EM Edelstein, MD Suehle, JS
Citation: Em. Vogel et al., Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection, J APPL PHYS, 90(5), 2001, pp. 2338-2346
Low-temperature aging of zirconia ferrules for optical connectors
Authors: Lance, MJ Vogel, EM Reith, LA Cannon, WR
Citation: Mj. Lance et al., Low-temperature aging of zirconia ferrules for optical connectors, J AM CERAM, 84(11), 2001, pp. 2731-2733
Analysis of leakage currents and impact on off-state power consumption forCMOS technology in the 100-nm regime
Authors: Henson, WK Yang, N Kubicek, S Vogel, EM Wortman, JJ De Meyer, K Naem, A
Citation: Wk. Henson et al., Analysis of leakage currents and impact on off-state power consumption forCMOS technology in the 100-nm regime, IEEE DEVICE, 47(7), 2000, pp. 1393-1400
Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress
Authors: Vogel, EM Suehle, JS Edelstein, MD Wang, B Chen, Y Bernstein, JB
Citation: Em. Vogel et al., Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress, IEEE DEVICE, 47(6), 2000, pp. 1183-1191
Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics
Authors: Vogel, EM Henson, WK Richter, CA Suehle, JS
Citation: Em. Vogel et al., Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics, IEEE DEVICE, 47(3), 2000, pp. 601-608
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
Authors: Henson, WK Ahmed, KZ Vogel, EM Hauser, JR Wortman, JJ Venables, RD Xu, M Venables, D
Citation: Wk. Henson et al., Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors, IEEE ELEC D, 20(4), 1999, pp. 179-181
Electrical properties of oxynitride thin films using noise and charge pumping measurements
Authors: Masson, P Morfouli, P Autran, JL Brini, J Balland, B Vogel, EM Wortman, JJ
Citation: P. Masson et al., Electrical properties of oxynitride thin films using noise and charge pumping measurements, J NON-CRYST, 245, 1999, pp. 54-58
Risultati: 1-10 |