AAAAAA
Results: 1-25/34
Authors:
Heimbrodt, W
Hartmann, T
Klar, PJ
Lampalzer, M
Stolz, W
Volz, K
Schaper, A
Treutmann, W
von Nidda, HAK
Loidl, A
Ruf, T
Sapega, VF
Citation: W. Heimbrodt et al., Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As, PHYSICA E, 10(1-3), 2001, pp. 175-180
Authors:
Volz, K
Hasse, A
Ensinger, W
Citation: K. Volz et al., Studies on treatment homogeneity of plasma immersion ion implantation by an optical method, SURF COAT, 136(1-3), 2001, pp. 80-84
Authors:
Volz, K
Baba, K
Hatada, R
Ensinger, W
Citation: K. Volz et al., Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases, SURF COAT, 136(1-3), 2001, pp. 197-201
Authors:
Ensinger, W
Volz, K
Enders, B
Citation: W. Ensinger et al., Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection, SURF COAT, 136(1-3), 2001, pp. 202-206
Authors:
Volz, K
Klatt, C
Ensinger, W
Citation: K. Volz et al., Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation, NUCL INST B, 175, 2001, pp. 569-574
Authors:
Lensch, O
Volz, K
Kiuchi, M
Ensinger, W
Citation: O. Lensch et al., Pitting corrosion of aluminium coated with amorphous carbon films by argonion beam assisted deposition at low process temperature, NUCL INST B, 175, 2001, pp. 575-579
Authors:
Galonska, M
Gabor, C
Thomae, RW
Klein, H
Volz, K
Ensinger, W
Citation: M. Galonska et al., Determination of ion incidence angles in plasma immersion ion implantationby means of a hollow multi-aperture target, NUCL INST B, 175, 2001, pp. 658-662
Authors:
Klar, PJ
Gruning, H
Koch, J
Schafer, S
Volz, K
Stolz, W
Heimbrodt, W
Saadi, AMK
Lindsay, A
O'Reilly, EP
Citation: Pj. Klar et al., (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen - art. no. 121203, PHYS REV B, 6412(12), 2001, pp. 1203
Authors:
Simonovic, M
Gettins, PGW
Volz, K
Citation: M. Simonovic et al., Crystal structure of human PEDF, a potent antiangiogenic and neurite growth-promoting factor, P NAS US, 98(20), 2001, pp. 11131-11135
Authors:
Simonovic, M
Volz, K
Citation: M. Simonovic et K. Volz, A distinct meta-active conformation in the 1.1-angstrom resolution structure of wild-type apoCheY, J BIOL CHEM, 276(31), 2001, pp. 28637-28640
Authors:
Simonovic, M
Gettins, PGW
Volz, K
Citation: M. Simonovic et al., Crystal structure of viral serpin crmA provides insights into its mechanism of cysteine proteinase inhibition, PROTEIN SCI, 9(8), 2000, pp. 1423-1427
Authors:
Volz, K
Schreiber, S
Gerlach, JW
Reiber, W
Rauschenbach, B
Stritzker, B
Assmann, W
Ensinger, W
Citation: K. Volz et al., Heteroepitaxial growth of 3C-SiC on (100) silicon by C-60 and Si molecularbeam epitaxy, MAT SCI E A, 289(1-2), 2000, pp. 255-264
Authors:
Simonovic, M
Gettins, PGW
Volz, K
Citation: M. Simonovic et al., Crystallization and preliminary X-ray diffraction analysis of a recombinant cysteine-free mutant of crmA, ACT CRYST D, 56, 2000, pp. 1440-1442
Authors:
Ensinger, W
Volz, K
Kiuchi, M
Citation: W. Ensinger et al., Ion beam-assisted deposition of nitrides of the 4th group of transition metals, SURF COAT, 128, 2000, pp. 81-84
Authors:
Ensinger, W
Volz, K
Hochbauer, T
Citation: W. Ensinger et al., Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity, SURF COAT, 128, 2000, pp. 265-269
Authors:
Ensinger, W
Volz, K
Citation: W. Ensinger et K. Volz, Ion-beam assisted coating of tube inner walls by plasma immersion ion implantation, SURF COAT, 128, 2000, pp. 270-273
Authors:
Volz, K
Kiuchi, M
Okumura, M
Ensinger, W
Citation: K. Volz et al., C-SiC-Si gradient films formed on silicon by ion beam assisted deposition at room temperature, SURF COAT, 128, 2000, pp. 274-279
Authors:
Volz, K
Kiuchi, M
Ensinger, W
Citation: K. Volz et al., Tantalum nitride films formed by ion beam assisted deposition: analysis ofthe structure in dependence on the ion irradiation intensity, SURF COAT, 128, 2000, pp. 298-302
Authors:
Volz, K
Enders, B
Ensinger, W
Citation: K. Volz et al., Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels, SURF COAT, 128, 2000, pp. 479-483
Authors:
Hasse, A
Volz, K
Schaper, AK
Koch, J
Hohnsdorf, F
Stolz, W
Citation: A. Hasse et al., TEM investigations of (GaIn)(NAs)/GaAs multi-quantum wells grown by MOVPE, CRYST RES T, 35(6-7), 2000, pp. 787-792
Authors:
Volz, K
Rauschenbach, B
Klatt, C
Ensinger, W
Citation: K. Volz et al., Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon-nitrogen-hydrogen system, NUCL INST B, 166, 2000, pp. 75-81
Authors:
Ensinger, W
Volz, K
Citation: W. Ensinger et K. Volz, Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation, NUCL INST B, 166, 2000, pp. 154-158
Authors:
Halkides, CJ
McEvoy, MM
Casper, E
Matsumura, P
Volz, K
Dahlquist, FW
Citation: Cj. Halkides et al., The 1.9 angstrom resolution crystal structure of phosphono-CheY, an analogue of the active form of the response regulator, CheY, BIOCHEM, 39(18), 2000, pp. 5280-5286
Authors:
Volz, K
Citation: K. Volz, A test case for structure-based functional assignment: The 1.2 angstrom crystal structure of the yjgF gene product from Escherichia coli, PROTEIN SCI, 8(11), 1999, pp. 2428-2437
Authors:
Volz, K
Schreiber, S
Zeitler, M
Rauschenbach, B
Stritzker, B
Ensinger, W
Citation: K. Volz et al., Structural investigations of silicon carbide films formed by fullerene carbonization of silicon, SURF COAT, 122(2-3), 1999, pp. 101-107