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Results:
1-22
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Results: 22
Authors:
KITABAYASHI H
WAHO T
YAMAMOTO M
Citation: H. Kitabayashi et al., RESONANT INTERBAND TUNNELING CURRENT IN INAS ALSB/GASB/ALSB/INAS DOUBLE-BARRIER DIODES/, Journal of applied physics, 84(3), 1998, pp. 1460-1466
Authors:
WAHO T
CHEN KJ
YAMAMOTO M
Citation: T. Waho et al., RESONANT-TUNNELING DIODE AND HEMT LOGIC-CIRCUITS WITH MULTIPLE THRESHOLDS AND MULTILEVEL OUTPUT, IEEE journal of solid-state circuits, 33(2), 1998, pp. 268-274
Authors:
FUKUYAMA H
WAHO T
YAMAMOTO M
Citation: H. Fukuyama et al., TUNNELING CURRENT THROUGH SI DONOR LEVEL IN GAAS ALAS SINGLE-BARRIER DIODES/, JPN J A P 1, 36(7A), 1997, pp. 4267-4271
Authors:
KITABAYASHI H
WAHO T
YAMAMOTO M
Citation: H. Kitabayashi et al., DEPENDENCE OF RESONANT INTERBAND TUNNELING CURRENT ON BARRIER AND WELL WIDTH IN INAS ALSB/GASB/ALSB/INAS DOUBLE-BARRIER STRUCTURES/, JPN J A P 1, 36(3B), 1997, pp. 1807-1810
Authors:
WAHO T
CHEN KJ
YAMAMOTO M
Citation: T. Waho et al., A NOVEL FUNCTIONAL LOGIC-CIRCUIT USING RESONANT-TUNNELING DEVICES FORMULTIPLE-VALUED LOGIC APPLICATIONS, JPN J A P 1, 36(3B), 1997, pp. 1818-1821
Authors:
SHIMIZU N
WAHO T
ISHIBASHI T
Citation: N. Shimizu et al., CAPACITANCE ANOMALY IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OFRESONANT-TUNNELING DIODES, JPN J A P 2, 36(3B), 1997, pp. 330-333
Authors:
KITABAYASHI H
WAHO T
YAMAMOTO M
Citation: H. Kitabayashi et al., RESONANT INTERBAND TUNNELING DIODE WITH HIGH PEAK CURRENT-DENSITY, Electronics Letters, 33(1), 1997, pp. 102-104
Authors:
KITABAYASHI H
WAHO T
YAMAMOTO M
Citation: H. Kitabayashi et al., RESONANT INTERBAND TUNNELING CURRENT IN INAS ALSB/GASB/ALSB/INAS DIODES WITH EXTREMELY THIN ALSB BARRIER LAYERS/, Applied physics letters, 71(4), 1997, pp. 512-514
Authors:
CHEN KJ
MAEZAWA K
WAHO T
YAMAMOTO M
Citation: Kj. Chen et al., DEVICE TECHNOLOGY FOR MONOLITHIC INTEGRATION OF INP-BASED RESONANT-TUNNELING DIODES AND HEMTS, IEICE transactions on electronics, E79C(11), 1996, pp. 1515-1524
Authors:
CHEN KJ
WAHO T
MAEZAWA K
YAMAMOTO M
Citation: Kj. Chen et al., AN EXCLUSIVE-OR LOGIC-CIRCUIT BASED ON CONTROLLED QUENCHING OF SERIES-CONNECTED NEGATIVE DIFFERENTIAL RESISTANCE DEVICES, IEEE electron device letters, 17(6), 1996, pp. 309-311
Authors:
WAHO T
CHEN KJ
YAMAMOTO M
Citation: T. Waho et al., A NOVEL MULTIPLE-VALUED LOGIC GATE USING RESONANT-TUNNELING DEVICES, IEEE electron device letters, 17(5), 1996, pp. 223-225
Authors:
SHIMIZU N
NAGATSUMA T
WAHO T
SHINAGAWA M
YAITA M
YAMAMOTO M
Citation: N. Shimizu et al., A NEW METHOD FOR CHARACTERIZING ULTRAFAST RESONANT-TUNNELING DIODES WITH ELECTROOPTIC SAMPLING, Optical and quantum electronics, 28(7), 1996, pp. 897-905
Authors:
FUKUYAMA H
WAHO T
MIZUTANI T
Citation: H. Fukuyama et al., CURRENT-VOLTAGE CHARACTERISTICS OF GAAS ALAS DOUBLE-BARRIER RESONANT-TUNNELING DIODES WITH A SI-PLANAR-DOPED BARRIER/, Journal of applied physics, 79(3), 1996, pp. 1801-1806
Authors:
FUKUYAMA H
WAHO T
Citation: H. Fukuyama et T. Waho, EXCESS CURRENT THROUGH SINGLE-BARRIER STRUCTURES WITH SI-PLANAR-DOPEDALAS LAYER, JPN J A P 2, 34(3B), 1995, pp. 342-344
Authors:
SHIMIZU N
NAGATSUMA T
SHINAGAWA M
WAHO T
Citation: N. Shimizu et al., PICOSECOND-SWITCHING TIME OF IN0.53GA0.47AS ALAS RESONANT-TUNNELING DIODES MEASURED BY ELECTROOPTIC SAMPLING TECHNIQUE/, IEEE electron device letters, 16(6), 1995, pp. 262-264
Authors:
KITABAYASHI H
WAHO T
Citation: H. Kitabayashi et T. Waho, ATOMIC-FORCE MICROSCOPE OBSERVATION OF THE INITIAL-STAGE OF INAS GROWTH ON GAAS SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 152-157
Authors:
SHIMIZU N
FURUTA T
WAHO T
TOMIZAWA M
MIZUTANI T
Citation: N. Shimizu et al., PHOTOLUMINESCENCE STUDY OF ELECTRON-TUNNELING TRANSFER IN COUPLED-QUANTUM-WELL STRUCTURES, Journal of applied physics, 78(5), 1995, pp. 3221-3229
Authors:
SHIMIZU N
NAGATSUMA T
WAHO T
SHINAGAWA M
YAITA M
YAMAMOTO M
Citation: N. Shimizu et al., IN0.53GA0.47AS ALAS RESONANT-TUNNELING DIODES WITH SWITCHING TIME OF 1.5PS/, Electronics Letters, 31(19), 1995, pp. 1695-1697
Authors:
WAHO T
KOCH S
MIZUTANI T
Citation: T. Waho et al., EXPERIMENTAL-ANALYSIS OF RESONANT-TUNNELING TRANSIT-TIME USING HIGH-FREQUENCY CHARACTERISTICS OF RESONANT-TUNNELING TRANSISTORS, Superlattices and microstructures, 16(2), 1994, pp. 205-209
Authors:
KOCH S
WAHO T
MIZUTANI T
Citation: S. Koch et al., INGAAS RESONANT-TUNNELING TRANSISTORS USING A COUPLED-QUANTUM-WELL BASE WITH STRAINED ALAS TUNNEL BARRIERS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1498-1503
Authors:
KOCH S
WAHO T
KOBAYASHI T
ISHIBASHI T
Citation: S. Koch et al., THIN-BASE INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH PARABOLICALLYGRADED INGAALAS EMITTER, JPN J A P 2, 32(7B), 1993, pp. 120000984-120000986
Authors:
SHIMIZU N
FURUTA T
WAHO T
MIZUTANI T
Citation: N. Shimizu et al., EFFECT OF FINAL-STATES ON ELECTRON-TUNNELING IN COUPLED QUANTUM-WELL STRUCTURES, Semiconductor science and technology, 7(3B), 1992, pp. 453-455
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