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Authors:
LAMBRECHT WRL
RASHKEEV SN
SEGALL B
LAWNICZAKJABLONSKA K
SUSKI T
GULLIKSON EM
UNDERWOOD JH
PERERA RCC
RIFE JC
GRZEGORY I
POROWSKI S
WICKENDEN DK
Citation: Wrl. Lambrecht et al., X-RAY-ABSORPTION, GLANCING-ANGLE REFLECTIVITY, AND THEORETICAL-STUDY OF THE N K-EDGE AND GA M(2,3)-EDGE SPECTRA IN GAN, Physical review. B, Condensed matter, 55(4), 1997, pp. 2612-2622
Citation: Lh. Robins et Dk. Wickenden, SPATIALLY-RESOLVED LUMINESCENCE STUDIES OF DEFECTS AND STRESS IN ALUMINUM GALLIUM NITRIDE FILMS, Applied physics letters, 71(26), 1997, pp. 3841-3843
Citation: Tj. Kistenmacher et Dk. Wickenden, SELF-NUCLEATED THIN-FILMS OF GAN AND ALXGA1-XN FOR OPTOELECTRONIC DEVICES - STRUCTURE AND MORPHOLOGY, Comments on modern chemistry. Part A, Comments on inorganic chemistry, 18(5-6), 1996, pp. 325-341
Citation: J. Miragliotta et Dk. Wickenden, NONLINEAR ELECTROREFLECTANCE FROM GALLIUM NITRIDE USING OPTICAL 2ND-HARMONIC GENERATION, Physical review. B, Condensed matter, 53(3), 1996, pp. 1388-1397
Citation: Rb. Givens et al., A HIGH-SENSITIVITY, WIDE DYNAMIC-RANGE MAGNETOMETER DESIGNED ON A XYLOPHONE RESONATOR, Applied physics letters, 69(18), 1996, pp. 2755-2757
Citation: J. Miragliotta et Dk. Wickenden, TRANSIENT PHOTOCURRENT INDUCED IN GALLIUM NITRIDE BY 2-PHOTON ABSORPTION, Applied physics letters, 69(14), 1996, pp. 2095-2097
Authors:
KENNEDY TA
GLASER ER
FREITAS JA
CARLOS WE
KHAN MA
WICKENDEN DK
Citation: Ta. Kennedy et al., NATIVE DEFECTS AND DOPANTS IN GAN STUDIED THROUGH PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE, Journal of electronic materials, 24(4), 1995, pp. 219-223
Authors:
WICKENDEN DK
BRYDEN WA
KISTENMACHER TJ
BYTHROW PF
STROHBEHN K
Citation: Dk. Wickenden et al., DEVELOPMENT OF ALXGA1-XN ALLOY SEMICONDUCTORS FOR SOLAR-BLIND ULTRAVIOLET SEEKER APPLICATIONS, Johns Hopkins APL technical digest, 16(3), 1995, pp. 246-257
Authors:
GLASER ER
KENNEDY TA
DOVERSPIKE K
ROWLAND LB
GASKILL DK
FREITAS JA
KHAN MA
OLSON DT
KUZNIA JN
WICKENDEN DK
Citation: Er. Glaser et al., OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 51(19), 1995, pp. 13326-13336
Citation: Jvd. Veliadis et al., INVESTIGATION OF THE TEMPERATURE-DEPENDENT RECOMBINATION PROCESSES INPERIODIC 4-NARROW-ASYMMETRIC-COUPLED-QUANTUM-WELL STRUCTURES, Journal of luminescence, 63(1-2), 1995, pp. 55-61
Authors:
KISTENMACHER TJ
WICKENDEN DK
HAWLEY ME
LEAVITT RP
Citation: Tj. Kistenmacher et al., REAL AND RECIPROCAL SPACE MAPPING OF THE MOSAIC DISPERSION IN SELF-NUCLEATED ALXGA1-XN THIN-FILMS ON (00.1)SAPPHIRE, Applied physics letters, 67(25), 1995, pp. 3771-3773
Authors:
GIORDANA A
GASKILL DK
WICKENDEN DK
WICKENDEN AE
Citation: A. Giordana et al., MODULATED REFLECTANCE AND ADSORPTION CHARACTERIZATION OF SINGLE-CRYSTAL GAN FILMS, Journal of electronic materials, 23(6), 1994, pp. 509-512
Citation: Dk. Wickenden et al., OPTICAL 3RD-HARMONIC INVESTIGATIONS OF GALLIUM NITRIDE NUCLEATION LAYERS ON SAPPHIRE, Journal of electronic materials, 23(11), 1994, pp. 1209-1214
Citation: J. Miragliotta et Dk. Wickenden, OPTICAL 3RD-HARMONIC STUDIES OF THE DISPERSION IN (X)OVER-BAR((3)) FOR GALLIUM NITRIDE THIN-FILMS ON SAPPHIRE, Physical review. B, Condensed matter, 50(20), 1994, pp. 14960-14964
Authors:
WICKENDEN DK
MIRAGLIOTTA JA
BRYDEN WA
KISTENMACHER TJ
Citation: Dk. Wickenden et al., THERMALLY ANNEALED GAN NUCLEATION LAYERS AND THE DEVICE-QUALITY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF SI-DOPED GAN FILMS ON (00.1) SAPPHIRE, Journal of applied physics, 75(11), 1994, pp. 7585-7587
Citation: Ae. Wickenden et al., THE EFFECT OF THERMAL ANNEALING ON GAN NUCLEATION LAYERS DEPOSITED ON(0001) SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 75(10), 1994, pp. 5367-5371