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Results:
1-16
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Results: 16
Authors:
AQARIDEN F
WIJEWARNASURIYA PS
SIVANANTHAN S
Citation: F. Aqariden et al., ARSENIC INCORPORATION IN HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1309-1311
Authors:
VYDYANATH HR
AQARIDEN F
WIJEWARNASURIYA PS
SIVANATHAN S
CHAMBERS G
BECKER L
Citation: Hr. Vydyanath et al., ANALYSIS OF THE VARIATION IN THE COMPOSITION AS A FUNCTION OF GROWTH-PARAMETERS IN THE MBE GROWTH OF INDIUM-DOPED HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 504-506
Authors:
VYDYANATH HR
AQARIDEN F
WIJEWARNASURIYA PS
SIVANANTHAN S
NATHAN V
Citation: Hr. Vydyanath et al., OBSERVATION OF PREVALENCE OF QUASI-EQUILIBRIUM IN THE MBE GROWTH OF HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 507-509
Authors:
WIJEWARNASURIYA PS
ZANDIAN M
EDWALL DD
MCLEVIGE WV
CHEN CA
PASKO JG
HILDEBRANDT G
CHEN AC
ARIAS JM
DSOUZA AI
RUJIRAWAT S
SIVANATHAN S
Citation: Ps. Wijewarnasuriya et al., MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES, Journal of electronic materials, 27(6), 1998, pp. 546-549
Authors:
CHEN AC
ZANDIAN M
EDWALL DD
DEWAMES RE
WIJEWARNASURIYA PS
ARIAS JM
SIVANANTHAN S
BERDING M
SHER A
Citation: Ac. Chen et al., MBE GROWTH AND CHARACTERIZATION OF IN-SITU ARSENIC DOPED HGCDTE, Journal of electronic materials, 27(6), 1998, pp. 595-599
Authors:
DSOUZA AI
BAJAJ J
DEWAMES RE
EDWALL DD
WIJEWARNASURIYA PS
NAYAR N
Citation: Ai. Dsouza et al., MWIR DLPH HGCDTE PHOTODIODE PERFORMANCE DEPENDENCE ON SUBSTRATE MATERIAL, Journal of electronic materials, 27(6), 1998, pp. 727-732
Authors:
WIJEWARNASURIYA PS
SIVANANTHAN S
Citation: Ps. Wijewarnasuriya et S. Sivananthan, ARSENIC INCORPORATION IN HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(14), 1998, pp. 1694-1696
Authors:
SIVANANTHAN S
WIJEWARNASURIYA PS
AQARIDEN F
VYDYANATH HR
ZANDIAN M
EDWALL DD
ARIAS JM
Citation: S. Sivananthan et al., MODE OF ARSENIC INCORPORATION IN HGCDTE GROWN BY MBE, Journal of electronic materials, 26(6), 1997, pp. 621-624
Authors:
WIJEWARNASURIYA PS
AQARIDEN F
GREIN CH
FAURIE JP
SIVANANTHAN S
Citation: Ps. Wijewarnasuriya et al., P-TYPE DOPING WITH ARSENIC IN (211)B HGCDTE GROWN BY MBE, Journal of crystal growth, 175, 1997, pp. 647-652
Authors:
WIJEWARNASURIYA PS
YOO SS
FAURIE JP
SIVANANTHAN S
Citation: Ps. Wijewarnasuriya et al., P-TYPE DOPING WITH ARSENIC IN (211)B HGCDTE GROWN BY MBE, Journal of electronic materials, 25(8), 1996, pp. 1300-1305
Authors:
WIJEWARNASURIYA PS
FAURIE JP
SIVANANTHAN S
Citation: Ps. Wijewarnasuriya et al., DOPING OF (211)B MERCURY CADMIUM TELLURIDE, Journal of crystal growth, 159(1-4), 1996, pp. 1136-1140
Authors:
WIJEWARNASURIYA PS
LANGE MD
SIVANANTHAN S
FAURIE JP
Citation: Ps. Wijewarnasuriya et al., ANALYSIS OF LOW DOPING LIMITATION IN MOLECULAR-BEAM EPITAXIALLY GROWNHGCDTE(211)B EPITAXIAL LAYERS, Journal of electronic materials, 24(9), 1995, pp. 1211-1218
Authors:
WIJEWARNASURIYA PS
LANGE MD
SIVANANTHAN S
FAURIE JP
Citation: Ps. Wijewarnasuriya et al., MINORITY-CARRIER LIFETIME IN INDIUM-DOPED HGCDTE(211)B EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(5), 1995, pp. 545-549
Authors:
VYDYANATH HR
LICHTMANN LS
SIVANANTHAN S
WIJEWARNASURIYA PS
FAURIE JP
Citation: Hr. Vydyanath et al., ANNEALING EXPERIMENTS IN HEAVILY ARSENIC-DOPED (HG,CD)TE, Journal of electronic materials, 24(5), 1995, pp. 625-634
Authors:
WIJEWARNASURIYA PS
LANGE MD
SIVANANTHAN S
FAURIE JP
Citation: Ps. Wijewarnasuriya et al., CARRIER RECOMBINATION IN INDIUM-DOPED HGCDTE(211)B EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(2), 1994, pp. 1005-1009
Authors:
RAFOL SB
WIJEWARNASURIYA PS
SIVANANTHAN S
FAURIE JP
Citation: Sb. Rafol et al., HALL ELECTRON-DENSITY AND MOBILITY IN HGCDTE ALLOYS WITH ANOMALOUS BEHAVIOR OF THE HALL-COEFFICIENT IN WEAK MAGNETIC-FIELD, Journal of applied physics, 74(2), 1993, pp. 1096-1099
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1-16
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