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Results: 1-25 | 26-27
Results: 1-25/27
UNCERTAINTIES ON LEAD-ISOTOPE ANALYSES - DECONVOLUTION IN THE DOUBLE-SPIKE METHOD
Authors: POWELL R WOODHEAD J HERGT J
Citation: R. Powell et al., UNCERTAINTIES ON LEAD-ISOTOPE ANALYSES - DECONVOLUTION IN THE DOUBLE-SPIKE METHOD, Chemical geology, 148(1-2), 1998, pp. 95-104
MODAL AND THRESHOLD ANALYSIS OF DIELECTRIC-APERTURED VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: CHANG KY WOODHEAD J ROBSON PN
Citation: Ky. Chang et al., MODAL AND THRESHOLD ANALYSIS OF DIELECTRIC-APERTURED VERTICAL-CAVITY SURFACE-EMITTING LASERS, Applied physics letters, 72(3), 1998, pp. 335-337
INFLUENCE OF ORDERING ON THE POLARIZATION CHARACTERISTICS OF GAINP VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: CHEN YH WILKINSON CI WOODHEAD J DAVID JPR BUTTON CC ROBSON PN
Citation: Yh. Chen et al., INFLUENCE OF ORDERING ON THE POLARIZATION CHARACTERISTICS OF GAINP VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 9(2), 1997, pp. 143-145
MEMORY EFFECTS ON PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/
Authors: VALTUENA JF IZPURA I SANCHEZROJAS JL MUNOZ E KHOO EA DAVID JPR WOODHEAD J GREY R REES GJ
Citation: Jf. Valtuena et al., MEMORY EFFECTS ON PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/, Microelectronics, 28(8-10), 1997, pp. 757-765
HIGH-POWER, HIGH-SPEED SURFACE-EMITTING LEDS WITH AN INGAAS QUANTUM-WELL
Authors: HIROTANI M SALE TE WOODHEAD J ROBERTS JS ROBSON PN SAKA T KATO T
Citation: M. Hirotani et al., HIGH-POWER, HIGH-SPEED SURFACE-EMITTING LEDS WITH AN INGAAS QUANTUM-WELL, Journal of crystal growth, 170(1-4), 1997, pp. 390-393
POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS
Authors: CHEN YH WILKINSON CI WOODHEAD J DAVID JPR BUTTON CC ROBSON PN
Citation: Yh. Chen et al., POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS, Journal of crystal growth, 170(1-4), 1997, pp. 394-398
VISIBLE (683 TO 713 NM) ROOM-TEMPERATURE ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL)
Authors: SALE TE ROBERTS JS WOODHEAD J DAVID JPR ROBSON PN
Citation: Te. Sale et al., VISIBLE (683 TO 713 NM) ROOM-TEMPERATURE ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL), Journal of crystal growth, 170(1-4), 1997, pp. 399-403
LOW-THRESHOLD INGAAS ALGAAS LASERS GROWN ON (111)B GAAS SUBSTRATE/
Authors: KHOO EA PABLA AS WOODHEAD J DAVID JPR GREY R REES GJ
Citation: Ea. Khoo et al., LOW-THRESHOLD INGAAS ALGAAS LASERS GROWN ON (111)B GAAS SUBSTRATE/, Electronics Letters, 33(11), 1997, pp. 957-958
ROOM-TEMPERATURE VISIBLE (683-713 NM) ALL-ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS)
Authors: SALE TE ROBERTS JS WOODHEAD J ROBSON PN
Citation: Te. Sale et al., ROOM-TEMPERATURE VISIBLE (683-713 NM) ALL-ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS), IEEE photonics technology letters, 8(4), 1996, pp. 473-475
BASALT AND SEDIMENT GEOCHEMISTRY AND MAGMA PETROGENESIS IN A TRANSECTFROM OCEANIC ISLAND-ARC TO RIFTED CONTINENTAL-MARGIN ARC - THE KERMADEC-HIKURANGI MARGIN, SW PACIFIC
Authors: GAMBLE J WOODHEAD J WRIGHT I SMITH I
Citation: J. Gamble et al., BASALT AND SEDIMENT GEOCHEMISTRY AND MAGMA PETROGENESIS IN A TRANSECTFROM OCEANIC ISLAND-ARC TO RIFTED CONTINENTAL-MARGIN ARC - THE KERMADEC-HIKURANGI MARGIN, SW PACIFIC, Journal of Petrology, 37(6), 1996, pp. 1523-1546
POLARIZATION CHARACTERISTICS OF INGAALP ALGAAS VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS/
Authors: CHEN YH WILKINSON CI WOODHEAD J BUTTON CC DAVID JPR PATE MA ROBSON PN
Citation: Yh. Chen et al., POLARIZATION CHARACTERISTICS OF INGAALP ALGAAS VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS/, Electronics Letters, 32(6), 1996, pp. 559-560
EXCITATION POWER AND BARRIER WIDTH DEPENDENCE OF PHOTOLUMINESCENCE INPIEZOELECTRIC MULTIQUANTUM-WELL P-I-N STRUCTURES
Authors: DAVID JPR SALE TE PABLA AS RODRIGUEZGIRONES PJ WOODHEAD J GREY R REES GJ ROBSON PN SKOLNICK MS HOGG RA
Citation: Jpr. David et al., EXCITATION POWER AND BARRIER WIDTH DEPENDENCE OF PHOTOLUMINESCENCE INPIEZOELECTRIC MULTIQUANTUM-WELL P-I-N STRUCTURES, Applied physics letters, 68(6), 1996, pp. 820-822
PARTIAL SCREENING OF INTERNAL ELECTRIC-FIELDS IN STRAINED PIEZOELECTRIC QUANTUM-WELL LASERS - IMPLICATIONS FOR OPTOELECTRONIC INTEGRATION
Authors: PABLA AS WOODHEAD J KHOO EA GREY R DAVID JPR REES GJ
Citation: As. Pabla et al., PARTIAL SCREENING OF INTERNAL ELECTRIC-FIELDS IN STRAINED PIEZOELECTRIC QUANTUM-WELL LASERS - IMPLICATIONS FOR OPTOELECTRONIC INTEGRATION, Applied physics letters, 68(12), 1996, pp. 1595-1597
VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS AT LAMBDA-LESS-THAN-650 NM
Authors: CHEN YH WOODHEAD J DAVID JPR BUTTON CC HOPKINSON M ROBERTS JS SALE TE ROBSON PN
Citation: Yh. Chen et al., VISIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS AT LAMBDA-LESS-THAN-650 NM, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 12-16
PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES
Authors: DAVID JPR SALE TE PABLA AS RODRIQUEZGIRONES PJ WOODHEAD J GREY R REES GJ ROBSON PN SKOLNICK MS
Citation: Jpr. David et al., PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 42-46
INXGA1-XAS INP QUANTUM-WELL STRUCTURES GROWN ON [111]B INP/
Authors: HOPKINSON M DAVID JPR KHOO EA PABLA AS WOODHEAD J REES GJ
Citation: M. Hopkinson et al., INXGA1-XAS INP QUANTUM-WELL STRUCTURES GROWN ON [111]B INP/, Microelectronics, 26(8), 1995, pp. 805-810
GROWTH OF PSEUDOMORPHIC INGAAS GAAS QUANTUM-WELLS ON [111]B GAAS FOR STRAINED-LAYER, PIEZOELECTRIC, OPTOELECTRONIC DEVICES/
Authors: GREY R DAVID JPR HILL G PABLA AS PATE MA REES GJ ROBSON PN RODRIGUEZGIRONES PJ SALE TE WOODHEAD J FISHER TA HOGG RA MOWBRAY DJ SKOLNICK MS WHITTAKER DM WILLCOX ARK
Citation: R. Grey et al., GROWTH OF PSEUDOMORPHIC INGAAS GAAS QUANTUM-WELLS ON [111]B GAAS FOR STRAINED-LAYER, PIEZOELECTRIC, OPTOELECTRONIC DEVICES/, Microelectronics, 26(8), 1995, pp. 811-820
GROWTH AND CHARACTERIZATION OF (111)B INGAAS GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES/
Authors: DAVID JPR GREY R REES GJ PABLA AS SALE TE WOODHEAD J SANCHEZROJAS JL PATE MA HILL G ROBSON PN HOGG RA FISHER TA SKOLNICK MS WHITTAKER DM WILLCOX ARK MOWBRAY DJ
Citation: Jpr. David et al., GROWTH AND CHARACTERIZATION OF (111)B INGAAS GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES/, Journal of electronic materials, 23(9), 1994, pp. 975-982
SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES/
Authors: FISHER TA HOGG RA WILLCOX ARK WHITTAKER DM SKOLNICK MS MOWBRAY DJ DAVID JPR PABLA AS REES GJ GREY R SANCHEZROJAS JL WOODHEAD J HILL G PATE MA ROBSON PN
Citation: Ta. Fisher et al., SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES/, Solid-state electronics, 37(4-6), 1994, pp. 645-648
CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS/
Authors: SALE TE WOODHEAD J REES GJ GREY R DAVID JPR PABLA AS RODRIGUEZGIRONES PJ ROBSON PN HOGG RA SKOLNICK MS
Citation: Te. Sale et al., CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS/, Journal of applied physics, 76(9), 1994, pp. 5447-5452
ALL-OPTICAL BISTABLE SWITCHING IN A STRAINED PIEZOELECTRIC SELF-ELECTRO-OPTIC EFFECT DEVICE
Authors: PABLA AS WOODHEAD J GREY R REES GJ DAVID JPR PATE MA ROBSON PN
Citation: As. Pabla et al., ALL-OPTICAL BISTABLE SWITCHING IN A STRAINED PIEZOELECTRIC SELF-ELECTRO-OPTIC EFFECT DEVICE, Electronics Letters, 30(18), 1994, pp. 1521-1522
ELECTROLUMINESCENCE FROM INGAAS INALAS HEMTS
Authors: WOODHEAD J REDDY M DAVID JPR
Citation: J. Woodhead et al., ELECTROLUMINESCENCE FROM INGAAS INALAS HEMTS, Electronics Letters, 30(14), 1994, pp. 1181-1183
STRAIN EFFECTS ON CARRIER LIFETIMES IN INGAAS (AL)GAAS MULTIPLE-QUANTUM WELLS/
Authors: MOLONEY MH HEGARTY J BUYDENS L DEMEESTER P GREY R WOODHEAD J
Citation: Mh. Moloney et al., STRAIN EFFECTS ON CARRIER LIFETIMES IN INGAAS (AL)GAAS MULTIPLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 253-256
PIEZOELECTRIC-FIELD EFFECTS ON TRANSITION ENERGIES, OSCILLATOR-STRENGTHS, AND LEVEL WIDTHS IN (111)B-GROWN (IN,GA)AS GAAS MULTIPLE-QUANTUM WELLS/
Authors: HOGG RA FISHER TA WILLCOX ARK WHITTAKER DM SKOLNICK MS MOWBRAY DJ DAVID JPR PABLA AS REES GJ GREY R WOODHEAD J SANCHEZROJAS JL HILL G PATE MA ROBSON PN
Citation: Ra. Hogg et al., PIEZOELECTRIC-FIELD EFFECTS ON TRANSITION ENERGIES, OSCILLATOR-STRENGTHS, AND LEVEL WIDTHS IN (111)B-GROWN (IN,GA)AS GAAS MULTIPLE-QUANTUM WELLS/, Physical review. B, Condensed matter, 48(11), 1993, pp. 8491-8494
TAILORING OF INTERNAL FIELDS IN INGAAS GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS/
Authors: PABLA AS SANCHEZROJAS JL WOODHEAD J GREY R DAVID JPR REES GJ HILL G PATE MA ROBSON PN HOGG RA FISHER TA WILLCOX ARK WHITTAKER DM SKOLNICK MS MOWBRAY DJ
Citation: As. Pabla et al., TAILORING OF INTERNAL FIELDS IN INGAAS GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS/, Applied physics letters, 63(6), 1993, pp. 752-754
Risultati: 1-25 | 26-27