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Results: 1-15 |
Results: 15
GaN grown by molecular beam epitaxy with antimony as surfactant
Authors: Pei, CW Turk, B Heroux, JB Wang, WI
Citation: Cw. Pei et al., GaN grown by molecular beam epitaxy with antimony as surfactant, J VAC SCI B, 19(4), 2001, pp. 1426-1428
Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates
Authors: Pei, CW Turk, B Wang, WI Kuan, TS
Citation: Cw. Pei et al., Mechanism of the reduction of dislocation density in epilayers grown on compliant substrates, J APPL PHYS, 90(12), 2001, pp. 5959-5962
InGaAsNSb/GaAs quantum wells for 1.55 mu m lasers grown by molecular-beam epitaxy
Authors: Yang, X Heroux, JB Mei, LF Wang, WI
Citation: X. Yang et al., InGaAsNSb/GaAs quantum wells for 1.55 mu m lasers grown by molecular-beam epitaxy, APPL PHYS L, 78(26), 2001, pp. 4068-4070
High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer
Authors: Jurkovic, MJ Li, LK Turk, B Wang, WI Syed, S Simonian, D Stormer, HL
Citation: Mj. Jurkovic et al., High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer, MRS I J N S, 5, 2000, pp. NIL_394-NIL_400
Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures
Authors: Li, LK Turk, B Wang, WI Syed, S Simonian, D Stormer, HL Lang, DV
Citation: Lk. Li et al., Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures, J VAC SCI B, 18(3), 2000, pp. 1472-1475
High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1484-1487
Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy, IEEE PHOTON, 12(2), 2000, pp. 128-130
Comparison of GaAs grown on standard Si (511) and compliant SOI (511)
Authors: Seaford, ML Tomich, DH Eyink, KG Grazulis, L Mahalingham, K Yang, Z Wang, WI
Citation: Ml. Seaford et al., Comparison of GaAs grown on standard Si (511) and compliant SOI (511), J ELEC MAT, 29(7), 2000, pp. 906-908
High-temperature characteristics of 1.3 mu m InGaAsN : Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., High-temperature characteristics of 1.3 mu m InGaAsN : Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy, APPL PHYS L, 76(7), 2000, pp. 795-797
High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy
Authors: Li, LK Turk, B Wang, WI Syed, S Simonian, D Stormer, HL
Citation: Lk. Li et al., High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 742-744
Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
Authors: Li, LK Jurkovic, MJ Wang, WI Van Hove, JM Chow, PP
Citation: Lk. Li et al., Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy, APPL PHYS L, 76(13), 2000, pp. 1740-1742
Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1144-1146
Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well
Authors: Hang, DR Chen, YF Fang, FF Wang, WI
Citation: Dr. Hang et al., Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well, PHYS REV B, 60(19), 1999, pp. 13318-13321
Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant
Authors: Yang, X Jurkovic, MJ Heroux, JB Wang, WI
Citation: X. Yang et al., Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant, ELECTR LETT, 35(13), 1999, pp. 1082-1083
Molecular beam epitaxial growth of InGaAsN : Sb/GaAs quantum wells for long-wavelength semiconductor lasers
Authors: Yang, X Jurkovic, MJ Heroux, JB Wang, WI
Citation: X. Yang et al., Molecular beam epitaxial growth of InGaAsN : Sb/GaAs quantum wells for long-wavelength semiconductor lasers, APPL PHYS L, 75(2), 1999, pp. 178-180
Risultati: 1-15 |