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Results: 1-25 |
Results: 25
The origin of the 2.8 eV blue emission in p-type GaN : Mg : A time-resolved photoluminescence investigation
Authors: Shahedipour, F Wessels, BW
Citation: F. Shahedipour et Bw. Wessels, The origin of the 2.8 eV blue emission in p-type GaN : Mg : A time-resolved photoluminescence investigation, MRS I J N S, 6(12), 2001, pp. 1-5
Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor
Authors: Blattner, AJ Lensch, J Wessels, BW
Citation: Aj. Blattner et al., Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor, J ELEC MAT, 30(11), 2001, pp. 1408-1411
Electrical properties of p-type GaN : Mg codoped with oxygen
Authors: Korotkov, RY Gregie, JM Wessels, BW
Citation: Ry. Korotkov et al., Electrical properties of p-type GaN : Mg codoped with oxygen, APPL PHYS L, 78(2), 2001, pp. 222-224
Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing
Authors: Guha, S Keller, RC Yang, V Shahedipour, F Wessels, BW
Citation: S. Guha et al., Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing, APPL PHYS L, 78(1), 2001, pp. 58-60
Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy
Authors: Korotkov, RY Wessels, BW
Citation: Ry. Korotkov et Bw. Wessels, Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy, MRS I J N S, 5, 2000, pp. NIL_258-NIL_263
I-131-Lym-1 in mice implanted with human Burkitt's lymphoma (Raji) tumors:Loss of tumor specificity due to radiolysis
Authors: DeNardo, GL DeNardo, SJ Wessels, BW Kukis, DL Miyao, N Yuan, AN
Citation: Gl. Denardo et al., I-131-Lym-1 in mice implanted with human Burkitt's lymphoma (Raji) tumors:Loss of tumor specificity due to radiolysis, CANC BIO R, 15(6), 2000, pp. 547-560
Epitaxial thin films of MgO an Si using metalorganic molecular beam epitaxy
Authors: Niu, F Hoerman, BH Wessels, BW
Citation: F. Niu et al., Epitaxial thin films of MgO an Si using metalorganic molecular beam epitaxy, J VAC SCI B, 18(4), 2000, pp. 2146-2152
Physical and chemical properties of radionuclide therapy
Authors: Wessels, BW Meares, CF
Citation: Bw. Wessels et Cf. Meares, Physical and chemical properties of radionuclide therapy, SEM RAD ONC, 10(2), 2000, pp. 115-122
MOCVD of epitaxial BaTiO3 films using a liquid barium precursor
Authors: Teren, AR Belot, JA Edleman, NL Marks, TJ Wessels, BW
Citation: Ar. Teren et al., MOCVD of epitaxial BaTiO3 films using a liquid barium precursor, CHEM VAPOR, 6(4), 2000, pp. 175-177
Combinatorial generation and analysis of nanometer- and micrometer-scale silicon features via "dip-pen" nanolithography and wet chemical etching
Authors: Weinberger, DA Hong, SG Mirkin, CA Wessels, BW Higgins, TB
Citation: Da. Weinberger et al., Combinatorial generation and analysis of nanometer- and micrometer-scale silicon features via "dip-pen" nanolithography and wet chemical etching, ADVAN MATER, 12(21), 2000, pp. 1600
Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy
Authors: Niu, F Hoerman, BH Wessels, BW
Citation: F. Niu et al., Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy, APPL SURF S, 161(1-2), 2000, pp. 74-77
Guided wave absorption and fluorescence in epitaxial Er : BaTiO3 on MgO
Authors: Gill, DM Ford, GM Block, BA Kim, SS Wessels, BW Ho, ST
Citation: Dm. Gill et al., Guided wave absorption and fluorescence in epitaxial Er : BaTiO3 on MgO, THIN SOL FI, 365(1), 2000, pp. 126-128
Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(111) multi-quantum wells
Authors: Pillai, MR Theiring, SC Barnett, SA Wessels, BW Desikan, A Kvam, EP
Citation: Mr. Pillai et al., Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(111) multi-quantum wells, J CRYST GR, 208(1-4), 2000, pp. 79-84
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
Authors: Reshchikov, MA Shahedipour, F Korotkov, RY Wessels, BW Ulmer, MP
Citation: Ma. Reshchikov et al., Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers, J APPL PHYS, 87(7), 2000, pp. 3351-3354
Pressure dependence of the blue luminescence in Mg-doped GaN
Authors: Ves, S Venkateswaran, UD Loa, I Syassen, K Shahedipour, F Wessels, BW
Citation: S. Ves et al., Pressure dependence of the blue luminescence in Mg-doped GaN, APPL PHYS L, 77(16), 2000, pp. 2536-2538
Investigation of the formation of the 2.8 eV luminescence band in p-type GaN : Mg
Authors: Shahedipour, F Wessels, BW
Citation: F. Shahedipour et Bw. Wessels, Investigation of the formation of the 2.8 eV luminescence band in p-type GaN : Mg, APPL PHYS L, 76(21), 2000, pp. 3011-3013
Validation of an analytical expression for the absorbed dose from a spherical beta source geometry and its application to micrometastatic radionuclide therapy
Authors: Sarfaraz, M Wessels, BW
Citation: M. Sarfaraz et Bw. Wessels, Validation of an analytical expression for the absorbed dose from a spherical beta source geometry and its application to micrometastatic radionuclide therapy, CLIN CANC R, 5(10), 1999, pp. 3020S-3023S
Can current models explain the lack of liver complications in Y-90 microsphere therapy?
Authors: Yorke, ED Jackson, A Fox, RA Wessels, BW Gray, BN
Citation: Ed. Yorke et al., Can current models explain the lack of liver complications in Y-90 microsphere therapy?, CLIN CANC R, 5(10), 1999, pp. 3024S-3030S
Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy
Authors: Korotkov, RY Reshchikov, MA Wessels, BW
Citation: Ry. Korotkov et al., Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy, PHYSICA B, 274, 1999, pp. 80-83
Deep acceptors in undoped GaN
Authors: Reshchikov, MA Shahedipour, F Korotkov, RY Ulmer, MP Wessels, BW
Citation: Ma. Reshchikov et al., Deep acceptors in undoped GaN, PHYSICA B, 274, 1999, pp. 105-108
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
Authors: Reshchikov, MA Yi, GC Wessels, BW
Citation: Ma. Reshchikov et al., Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities, PHYS REV B, 59(20), 1999, pp. 13176-13183
MIRD pamphlet no. 16: Techniques for quantitative radiopharmaceutical biodistribution data acquisition and analysis for use in human radiation dose estimates
Authors: Siegel, JA Thomas, SR Stubbs, JB Stabin, MG Hays, MT Koral, KF Robertson, JS Howell, RW Wessels, BW Fisher, DR Weber, DA Brill, AB
Citation: Ja. Siegel et al., MIRD pamphlet no. 16: Techniques for quantitative radiopharmaceutical biodistribution data acquisition and analysis for use in human radiation dose estimates, J NUCL MED, 40(2), 1999, pp. 37S-61S
The MIRD perspective 1999
Authors: Howell, RW Wessels, BW Loevinger, R
Citation: Rw. Howell et al., The MIRD perspective 1999, J NUCL MED, 40(1), 1999, pp. 3S-10S
MIRD pamphlet No. 17: The dosimetry of nonuniform activity distributions -Radionuclide S values at the voxel level
Authors: Bolch, WE Bouchet, LG Robertson, JS Wessels, BW Siegel, JA Howell, RW Erdi, AK Aydogan, B Costes, S Watson, EE
Citation: We. Bolch et al., MIRD pamphlet No. 17: The dosimetry of nonuniform activity distributions -Radionuclide S values at the voxel level, J NUCL MED, 40(1), 1999, pp. 11S-36S
Ferroelectric oxide epitaxial thin films: synthesis and non-linear opticalproperties
Authors: Wessels, BW
Citation: Bw. Wessels, Ferroelectric oxide epitaxial thin films: synthesis and non-linear opticalproperties, J CRYST GR, 195(1-4), 1998, pp. 706-710
Risultati: 1-25 |