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Results: 1-9 |
Results: 9

Authors: Wieteska, K Wierzchowski, W Graeff, W Turos, A Grotzschel, R
Citation: K. Wieteska et al., Synchrotron studies of implanted InxGa1-xAs, J ALLOY COM, 328(1-2), 2001, pp. 193-198

Authors: Wierzchowski, W Wieteska, K Turos, A Graeff, W Gawlik, G
Citation: W. Wierzchowski et al., Synchrotron investigation of strain profiles in the implanted semiconductors, VACUUM, 63(4), 2001, pp. 767-773

Authors: Wieteska, K Wierzchowski, W Graeff, W Turos, A
Citation: K. Wieteska et al., Application of Bragg-case section topography for strain profile determination in A(III)B(V) implanted semiconductors, J PHYS D, 34(10A), 2001, pp. A122-A127

Authors: Wieteska, K Wierzchowski, W Graeff, W Turos, A Grotzschel, R
Citation: K. Wieteska et al., Characterization of implanted semiconductors by means of white-beam and plane-wave synchrotron topography, J SYNCHROTR, 7, 2000, pp. 318-325

Authors: Wierzchowski, W Wieteska, K Graeff, W
Citation: W. Wierzchowski et al., Numerical simulation of Bragg-case section topographic images of dislocations in silicon, J PHYS D, 33(10), 2000, pp. 1230-1238

Authors: Wierzchowski, W Wieteska, K Graeff, W Turos, A
Citation: W. Wierzchowski et al., Interference fringes in plane-wave topography of AlxCa1-xAs epitaxial layers implanted with Se ions, J ALLOY COM, 286(1-2), 1999, pp. 343-348

Authors: Wieteska, K Wierzchowski, W Graeff, W
Citation: K. Wieteska et al., White beam pin-hole patterns of implanted layers, J ALLOY COM, 286(1-2), 1999, pp. 349-353

Authors: Wierzchowski, W Wieteska, K Graeff, W Gawlik, G Pawlowska, M
Citation: W. Wierzchowski et al., White beam synchrotron topographic characterisation of silicon wafers directly bonded by oxide layer, ACT PHY P A, 96(2), 1999, pp. 283-288

Authors: Wieteska, K Wierzchowski, W Graeff, W Turos, A Grotzschel, R
Citation: K. Wieteska et al., Lattice deformation in AlxGa1-xAs epitaxial layers caused by implantation with high doses of 1 MeV Si ions, ACT PHY P A, 96(2), 1999, pp. 289-293
Risultati: 1-9 |