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Results: 1-25/108
Authors:
Fu, Y
Willander, M
Liu, J
Citation: Y. Fu et al., Statistics of electric conductance through anisotropically conductive adhesive, IEEE T COMP, 24(2), 2001, pp. 250-255
Authors:
Fu, Y
Patel, CJ
Willander, M
Citation: Y. Fu et al., Designing nanometre silicon-on-insulator MOSFET with buried Si1-xGex quantum well channel, PHYSICA E, 9(4), 2001, pp. 694-700
Authors:
Averkiev, NS
Golub, LE
Tarasenko, SA
Willander, M
Citation: Ns. Averkiev et al., Theory of magneto-oscillation effects in quasi-two-dimensional semiconductor structures, J PHYS-COND, 13(11), 2001, pp. 2517-2530
Authors:
Turan, R
Aslan, B
Nur, O
Yousif, MYA
Willander, M
Citation: R. Turan et al., Observation of strain relaxation in Si1-xGex layers by optical and electrical characterisation of a Schottky junction, APPL PHYS A, 72(5), 2001, pp. 587-593
Authors:
Mamor, M
Fu, Y
Nur, O
Willander, M
Bengtsson, S
Citation: M. Mamor et al., Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor, APPL PHYS A, 72(5), 2001, pp. 633-637
Authors:
Fu, Y
Willander, M
Lundgren, P
Citation: Y. Fu et al., Current and capacitance characteristics of a metal-insulator-semiconductorstructure with an ultrathin oxide layer, SUPERLATT M, 30(2), 2001, pp. 53-60
Authors:
Fu, Y
Bagge, S
Gustavsson, M
Haglund, A
Willander, M
Li, N
Li, N
Lu, W
Liu, XQ
Yuan, XZ
Li, ZF
Dou, HF
Shen, SC
Citation: Y. Fu et al., Infrared radiation transmission through GaAs/AlGaAs quantum well infrared photodetector, SUPERLATT M, 29(4), 2001, pp. 309-318
Authors:
Lu, W
Liu, XQ
Li, ZF
Shen, SC
Zhao, QX
Fu, Y
Willander, M
Tan, HH
Jagadish, C
Zou, J
Cockayne, DJH
Citation: W. Lu et al., Carrier transfer between V-grooved quantum wire and vertical quantum well, PHYS LETT A, 280(1-2), 2001, pp. 77-80
Authors:
Fu, Y
Willander, M
Liu, J
Citation: Y. Fu et al., Spatial distribution of metal fillers in isotropically conductive adhesives, J ELEC MAT, 30(7), 2001, pp. 866-871
Authors:
Jain, SC
Decoutere, S
Willander, M
Maes, HE
Citation: Sc. Jain et al., SiGeHBT for application in BiCMOS technology: II. Design, technology and performance, SEMIC SCI T, 16(7), 2001, pp. R67-R85
Authors:
Atkinson, A
Jain, SC
Maes, HE
Pinardi, K
Willander, M
Citation: A. Atkinson et al., Depth profiling of strain using micro-Raman measurements, SEMIC SCI T, 16(7), 2001, pp. 584-588
Authors:
Jain, SC
Decoutere, S
Willander, M
Maes, HE
Citation: Sc. Jain et al., SiGeHBTs for application in BiCMOS technology: I. Stability, reliability and material parameters, SEMIC SCI T, 16(6), 2001, pp. R51-R65
Authors:
Yousif, MYA
Willander, M
Lundgren, P
Caymax, M
Citation: Mya. Yousif et al., Behaviour of poly-Si1-xGex-gated MOS capacitors under different electricalstress conditions in the direct tunnelling regime, SEMIC SCI T, 16(6), 2001, pp. 478-482
Authors:
Ryzhii, V
Khmyrova, I
Pipa, V
Mitin, V
Willander, M
Citation: V. Ryzhii et al., Device model for quantum dot infrared photodetectors and their dark-current characteristics, SEMIC SCI T, 16(5), 2001, pp. 331-338
Authors:
Ouacha, H
Nur, O
Fu, Y
Willander, M
Ouacha, A
Turan, R
Citation: H. Ouacha et al., Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction, SEMIC SCI T, 16(4), 2001, pp. 255-259
Authors:
Sakalas, P
Garcia, M
Zirath, H
Willander, M
Citation: P. Sakalas et al., Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors, SEMIC SCI T, 16(1), 2001, pp. 14-20
Authors:
Averkiev, NS
Golub, LE
Tarasenko, SA
Willander, M
Citation: Ns. Averkiev et al., Effect of intersubband scattering on weak localization in two-dimensional systems - art. no. 045405, PHYS REV B, 6404(4), 2001, pp. 5405
Authors:
Zhao, QX
Wongmanerod, S
Willander, M
Holtz, PO
Wang, SM
Sadeghi, M
Citation: Qx. Zhao et al., Electronic structure of beryllium acceptors confined in GaAs/AlxGa1-xAs quantum wells - art. no. 195317, PHYS REV B, 6319(19), 2001, pp. 5317
Authors:
Zhao, QX
Willander, M
Bergman, JP
Holtz, PO
Lu, W
Shen, SC
Citation: Qx. Zhao et al., Dynamic properties of radiative recombination in p-type delta-doped layersin GaAs - art. no. 125337, PHYS REV B, 6312(12), 2001, pp. 5337
Authors:
Mamor, M
Willander, M
Auret, FD
Meyer, WE
Sveinbjornsson, E
Citation: M. Mamor et al., Configurationally metastable defects in irradiated epitaxially grown boron-doped p-type Si - art. no. 045201, PHYS REV B, 6304(4), 2001, pp. 5201
Authors:
Yousif, MYA
Nur, O
Willander, M
Patel, CJ
Hernandez, C
Campidelli, Y
Bensahel, D
Kyutt, RN
Citation: Mya. Yousif et al., Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers, SOL ST ELEC, 45(11), 2001, pp. 1869-1874
Authors:
Myrberg, T
Jacob, AP
Nur, O
Zhao, QX
Willander, M
DeBoer, WB
Citation: T. Myrberg et al., Relaxation and photoluminscence of different post-processed Si/Si1-xGex quantum well structures grown by CVD, SOL ST ELEC, 45(11), 2001, pp. 1915-1919
Authors:
Yousif, MYA
Nur, O
Willander, M
Citation: Mya. Yousif et al., Recent critical issues in Si/Si1-xGex/Si heterostructure FET devices, SOL ST ELEC, 45(11), 2001, pp. 1931-1937
Authors:
Jacob, AP
Zhao, QX
Willander, M
Baron, T
Magnea, N
Citation: Ap. Jacob et al., Hydrogen passivation of nitrogen acceptors confined in CdZnTe quantum wellstructures, J APPL PHYS, 90(5), 2001, pp. 2329-2332
Authors:
Liu, XQ
Sasaki, A
Ohno, N
Li, ZF
Lu, W
Shen, SC
Fu, Y
Willander, M
Tan, HH
Jagadish, C
Citation: Xq. Liu et al., Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure, J APPL PHYS, 90(10), 2001, pp. 5438-5440