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Results: 26-50/69
Authors:
Janssen, PL
Williams, JS
Fregosi, RF
Citation: Pl. Janssen et al., Consequences of periodic augmented breaths on tongue muscle activities in hypoxic rats, J APP PHYSL, 88(5), 2000, pp. 1915-1923
Authors:
Kuball, M
Hayes, JM
Suski, T
Jun, J
Tan, HH
Williams, JS
Jagadish, C
Citation: M. Kuball et al., The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films, MRS I J N S, 5, 2000, pp. NIL_635-NIL_640
Authors:
Williams, JS
Kalita, JK
Citation: Js. Williams et Jk. Kalita, Parsing and interpretation in the minimalist paradigm, COMPUT INTE, 16(3), 2000, pp. 378-407
Authors:
Williams, JS
Young, IM
Conway, MJ
Citation: Js. Williams et al., Ion beam induced epitaxy experiments in silicon under channeling and random alignments, NUCL INST B, 161, 2000, pp. 505-509
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Zou, J
Li, G
Citation: So. Kucheyev et al., Damage buildup in GaN under ion bombardment, PHYS REV B, 62(11), 2000, pp. 7510-7522
Authors:
Williams, JS
Citation: Js. Williams, Barthes: Mythologies, J EUR STUD, 30(118), 2000, pp. 234-235
Authors:
Williams, JS
Citation: Js. Williams, Articulations of difference: Gender studies and writing in French, MOD LANG R, 95, 2000, pp. 223-224
Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Zou, J
Li, G
Citation: So. Kucheyev et al., Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment, J APPL PHYS, 88(9), 2000, pp. 5493-5495
Authors:
Kuball, M
Hayes, JM
Suski, T
Jun, J
Leszczynski, M
Domagala, J
Tan, HH
Williams, JS
Jagadish, C
Citation: M. Kuball et al., High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering, J APPL PHYS, 87(6), 2000, pp. 2736-2741
Authors:
Toth, M
Kucheyev, SO
Williams, JS
Jagadish, C
Phillips, MR
Li, G
Citation: M. Toth et al., Imaging charge trap distributions in GaN using environmental scanning electron microscopy, APPL PHYS L, 77(9), 2000, pp. 1342-1344
Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation
Authors:
Williams, JS
Zhu, XF
Ridgway, MC
Conway, MJ
Williams, BC
Fortuna, F
Ruault, MO
Bernas, H
Citation: Js. Williams et al., Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation, APPL PHYS L, 77(26), 2000, pp. 4280-4282
Authors:
Bradby, JE
Williams, JS
Wong-Leung, J
Swain, MV
Munroe, P
Citation: Je. Bradby et al., Transmission electron microscopy observation of deformation microstructureunder spherical indentation in silicon, APPL PHYS L, 77(23), 2000, pp. 3749-3751
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Jagadish, C
Li, G
Citation: So. Kucheyev et al., Ion-beam-induced dissociation and bubble formation in GaN, APPL PHYS L, 77(22), 2000, pp. 3577-3579
Authors:
Kucheyev, SO
Bradby, JE
Williams, JS
Jagadish, C
Toth, M
Phillips, MR
Swain, MV
Citation: So. Kucheyev et al., Nanoindentation of epitaxial GaN films, APPL PHYS L, 77(21), 2000, pp. 3373-3375
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Zou, J
Craig, VSJ
Li, G
Citation: So. Kucheyev et al., Ion-beam-induced porosity of GaN, APPL PHYS L, 77(10), 2000, pp. 1455-1457
Authors:
Venezia, VC
Brown, RA
Kalyanaraman, R
Haynes, TE
Holland, OW
Williams, JS
Citation: Vc. Venezia et al., Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)], APPL PHYS L, 77(1), 2000, pp. 151-152
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Li, G
Pearton, SJ
Citation: So. Kucheyev et al., Strong surface disorder and loss of N produced by ion bombardment of GaN, APPL PHYS L, 76(26), 2000, pp. 3899-3901
Authors:
Day, RG
Horschke, WA
Hallahan, MT
Jackson, T
Williams, JS
Citation: Rg. Day et al., System design solutions for high volume immunoassay analysis, J CLIN LIG, 22(2), 1999, pp. 184-193
Authors:
Welham, NJ
Williams, JS
Citation: Nj. Welham et Js. Williams, Carbothermic reduction of ilmenite (FeTiO3) and rutile (TiO2), MET MAT T B, 30(6), 1999, pp. 1075-1081
Authors:
Chen, Y
Williams, JS
Campbell, SJ
Wang, GM
Citation: Y. Chen et al., Increased dissolution of ilmenite induced by high-energy ball milling, MAT SCI E A, 271(1-2), 1999, pp. 485-490
Authors:
Williams, JS
Chen, Y
Wong-Leung, J
Kerr, A
Swain, MV
Citation: Js. Williams et al., Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters, J MATER RES, 14(6), 1999, pp. 2338-2343
Authors:
Zhu, XF
Williams, JS
McCallum, JC
Citation: Xf. Zhu et al., Structural changes in ultra-high-dose self-implanted crystalline and amorphous silicon, NUCL INST B, 148(1-4), 1999, pp. 268-272
Authors:
Kinomura, A
Chayahara, A
Tsubouchi, N
Horino, Y
Williams, JS
Citation: A. Kinomura et al., Activation energies for light ions in ion beam induced epitaxial crystallization, NUCL INST B, 148(1-4), 1999, pp. 370-374
Authors:
Li, ZL
Wong-Leung, J
Deenapanray, PNK
Conway, M
Chivers, DJ
FitzGerald, JD
Williams, JS
Citation: Zl. Li et al., The role of Fe on the crystallisation of alpha-Si3N4 from amorphous Si-N formed by ion implantation, NUCL INST B, 148(1-4), 1999, pp. 534-539
Authors:
Gurarie, VN
Jamieson, DN
Orlov, AV
Williams, JS
Conway, M
Citation: Vn. Gurarie et al., Thermal fatigue of ion implanted magnesium oxide crystals, NUCL INST B, 148(1-4), 1999, pp. 773-777