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Results:
1-20
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Results: 20
Authors:
Bradby, JE
Williams, JS
Wong-Leung, J
Swain, MV
Munroe, P
Citation: Je. Bradby et al., Mechanical deformation in silicon by micro-indentation, J MATER RES, 16(5), 2001, pp. 1500-1507
Authors:
Liu, ACY
McCallum, JC
Wong-Leung, J
Citation: Acy. Liu et al., Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation, J MATER RES, 16(11), 2001, pp. 3229-3237
Authors:
Williams, JS
Ridgway, MC
Conway, MJ
Wong-Leung, J
Zhu, XF
Petravic, M
Fortuna, F
Ruault, MO
Bernas, H
Kinomura, A
Nakano, Y
Hayashi, Y
Citation: Js. Williams et al., Interaction of defects and metals with nanocavities in silicon, NUCL INST B, 178, 2001, pp. 33-43
Authors:
Stritzker, B
Petravic, M
Wong-Leung, J
Williams, JS
Citation: B. Stritzker et al., Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon, NUCL INST B, 175, 2001, pp. 154-158
Authors:
Liu, ACY
McCallum, JC
Wong-Leung, J
Citation: Acy. Liu et al., The crystallisation of deep amorphous wells in silicon produced by ion implantation, NUCL INST B, 175, 2001, pp. 164-168
Authors:
Wong-Leung, J
Jagadish, C
Conway, MJ
Fitz Gerald, JD
Citation: J. Wong-leung et al., Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon, J APPL PHYS, 89(5), 2001, pp. 2556-2559
Authors:
Macdonald, D
Cuevas, A
Wong-Leung, J
Citation: D. Macdonald et al., Capture cross sections of the acceptor level of iron-boron pairs in p-typesilicon by injection-level dependent lifetime measurements, J APPL PHYS, 89(12), 2001, pp. 7932-7939
Authors:
Linnarsson, MK
Janson, MS
Zimmermann, U
Svensson, BG
Persson, POA
Hultman, L
Wong-Leung, J
Karlsson, S
Schoner, A
Bleichner, H
Olsson, E
Citation: Mk. Linnarsson et al., Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material, APPL PHYS L, 79(13), 2001, pp. 2016-2018
Authors:
Pellegrino, P
Leveque, P
Wong-Leung, J
Jagadish, C
Svensson, BG
Citation: P. Pellegrino et al., Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation, APPL PHYS L, 78(22), 2001, pp. 3442-3444
Authors:
Bradby, JE
Williams, JS
Wong-Leung, J
Swain, MV
Munroe, P
Citation: Je. Bradby et al., Mechanical deformation of InP and GaAs by spherical indentation, APPL PHYS L, 78(21), 2001, pp. 3235-3237
Authors:
Williams, JS
Conway, MJ
Williams, BC
Wong-Leung, J
Citation: Js. Williams et al., Direct observation of voids in the vacancy excess region of ion bombarded silicon, APPL PHYS L, 78(19), 2001, pp. 2867-2869
Authors:
Stritzker, B
Petravic, M
Wong-Leung, J
Williams, JS
Citation: B. Stritzker et al., Selectivity of nanocavities and dislocations for gettering of Cu and Fe insilicon, APPL PHYS L, 78(18), 2001, pp. 2682-2684
Authors:
Wong-Leung, J
Fatima, S
Jagadish, C
FitzGerald, JD
Citation: J. Wong-leung et al., Effect of implant temperature on extended defects created by ion implantation in silicon, DEFECT DIFF, 183-1, 2000, pp. 163-169
Authors:
Wong-Leung, J
Fatima, S
Jagadish, C
Fitz Gerald, JD
Chou, CT
Zou, J
Cockayne, DJH
Citation: J. Wong-leung et al., Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon, J APPL PHYS, 88(3), 2000, pp. 1312-1318
Authors:
Bradby, JE
Williams, JS
Wong-Leung, J
Swain, MV
Munroe, P
Citation: Je. Bradby et al., Transmission electron microscopy observation of deformation microstructureunder spherical indentation in silicon, APPL PHYS L, 77(23), 2000, pp. 3749-3751
Authors:
Williams, JS
Chen, Y
Wong-Leung, J
Kerr, A
Swain, MV
Citation: Js. Williams et al., Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters, J MATER RES, 14(6), 1999, pp. 2338-2343
Authors:
Li, ZL
Wong-Leung, J
Deenapanray, PNK
Conway, M
Chivers, DJ
FitzGerald, JD
Williams, JS
Citation: Zl. Li et al., The role of Fe on the crystallisation of alpha-Si3N4 from amorphous Si-N formed by ion implantation, NUCL INST B, 148(1-4), 1999, pp. 534-539
Authors:
Wong-Leung, J
Williams, JS
Kinomura, A
Nakano, Y
Hayashi, Y
Eaglesham, DJ
Citation: J. Wong-leung et al., Diffusion and transient trapping of metals in silicon, PHYS REV B, 59(12), 1999, pp. 7990-7998
Authors:
Williams, JS
Conway, MJ
Wong-Leung, J
Deenapanray, PNK
Petravic, M
Brown, RA
Eaglesham, DJ
Jacobson, DC
Citation: Js. Williams et al., The role of oxygen on the stability of gettering of metals to cavities in silicon, APPL PHYS L, 75(16), 1999, pp. 2424-2426
Authors:
Fatima, S
Wong-Leung, J
Gerald, JF
Jagadish, C
Citation: S. Fatima et al., Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si, APPL PHYS L, 74(8), 1999, pp. 1141-1143
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