Citation: Jz. Xiong et Tk. Sham, SI CORE-LEVEL XANES OF ORGANOMETALLIC COMPOUNDS CONTAINING SI-GE BONDS - EXPERIMENTAL AND THEORETICAL OBSERVATIONS, Journal de physique. IV, 7(C2), 1997, pp. 493-494
Authors:
XIONG JZ
JIANG DT
LIU ZF
BAINES KM
SHAM TK
URQUHART SG
WEN AT
TYLISZCZAK T
HITCHCOCK AP
Citation: Jz. Xiong et al., SI CORE-LEVEL EXCITATION OF HEXAMETHYLDISILANE STUDIED BY SYNCHROTRON-RADIATION AND MULTIPLE-SCATTERING X-ALPHA CALCULATION, Chemical physics, 203(1), 1996, pp. 81-92
Citation: Jz. Xiong et al., COMPUTATIONALLY EFFICIENT SPECTRUM-RECOVERY METHODS WHICH COMPENSATE FOR STATIC AND DYNAMIC NONIDEALITIES IN ELECTROOPTIC MASKS USED IN HADAMARD-TRANSFORM SPECTROMETRY, IEEE transactions on instrumentation and measurement, 45(5), 1996, pp. 854-859
Authors:
XIONG JZ
JIANG DT
DIXON CE
BAINES KM
SHAM TK
Citation: Jz. Xiong et al., STRUCTURE AND BONDING OF ORGANOSILICON COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY, Canadian journal of chemistry, 74(11), 1996, pp. 2229-2239
Authors:
URQUHART SG
XIONG JZ
WEN AT
SHAM TK
BAINES KM
DESOUZA GGB
HITCHCOCK AP
Citation: Sg. Urquhart et al., INNER-SHELL SPECTROSCOPY OF COMPOUNDS CONTAINING SI-SI BONDS - IS THERE A LOCALIZED, LOW-ENERGY SI-SI RESONANCE, Chemical physics, 189(3), 1994, pp. 757-768
Authors:
SHAM TK
HOLROYD RA
XIONG JZ
FENG XH
YANG BX
Citation: Tk. Sham et al., PHOTOCONDUCTIVITY MEASUREMENTS OF X-RAY-ABSORPTION FINE-STRUCTURES INLIQUIDS IN THE SOFT-X-RAY REGION - SI AND CL K-EDGE, JPN J A P 1, 32, 1993, pp. 209-213
Citation: Yx. Zhou et al., THE RULES OF CHANGES OF BOND STRENGTHS IN 3 MEMBER HETEROCYCLIC-COMPOUNDS WITH HETEROATOMS BE, B, N, O AND S, Huaxue xuebao, 51(5), 1993, pp. 444-450
Authors:
HITCHCOCK AP
TYLISZCZAK T
AEBI P
XIONG JZ
SHAM TK
BAINES KM
MUELLER KA
FENG XH
CHEN JM
YANG BX
LU ZH
BARIBEAU JM
JACKMAN TE
Citation: Ap. Hitchcock et al., SI K-EDGE AND GE K-EDGE X-RAY-ABSORPTION SPECTROSCOPY OF THE SI-GE INTERFACE IN [(SI)M(GE)N]P ATOMIC LAYER SUPERLATTICES, Surface science, 291(3), 1993, pp. 349-369
Authors:
SHAM TK
FENG XH
JIANG DT
YANG BX
XIONG JZ
BZOWSKI A
HOUGHTON DC
BRYSKIEWICZ B
WANG E
Citation: Tk. Sham et al., SI K-EDGE X-RAY-ABSORPTION FINE-STRUCTURE STUDIES OF POROUS SILICON, Canadian journal of physics, 70(10-11), 1992, pp. 813-818