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Results: 1-12 |
Results: 12
SI CORE-LEVEL XANES OF ORGANOMETALLIC COMPOUNDS CONTAINING SI-GE BONDS - EXPERIMENTAL AND THEORETICAL OBSERVATIONS
Authors: XIONG JZ SHAM TK
Citation: Jz. Xiong et Tk. Sham, SI CORE-LEVEL XANES OF ORGANOMETALLIC COMPOUNDS CONTAINING SI-GE BONDS - EXPERIMENTAL AND THEORETICAL OBSERVATIONS, Journal de physique. IV, 7(C2), 1997, pp. 493-494
SI CORE-LEVEL EXCITATION OF HEXAMETHYLDISILANE STUDIED BY SYNCHROTRON-RADIATION AND MULTIPLE-SCATTERING X-ALPHA CALCULATION
Authors: XIONG JZ JIANG DT LIU ZF BAINES KM SHAM TK URQUHART SG WEN AT TYLISZCZAK T HITCHCOCK AP
Citation: Jz. Xiong et al., SI CORE-LEVEL EXCITATION OF HEXAMETHYLDISILANE STUDIED BY SYNCHROTRON-RADIATION AND MULTIPLE-SCATTERING X-ALPHA CALCULATION, Chemical physics, 203(1), 1996, pp. 81-92
CARDENOLIDES FROM ERYSIMUM CHEIRANTHOIDES
Authors: LEI ZH YAHARA S NOHARA T SHAN TB XIONG JZ
Citation: Zh. Lei et al., CARDENOLIDES FROM ERYSIMUM CHEIRANTHOIDES, Phytochemistry, 41(4), 1996, pp. 1187-1189
COMPUTATIONALLY EFFICIENT SPECTRUM-RECOVERY METHODS WHICH COMPENSATE FOR STATIC AND DYNAMIC NONIDEALITIES IN ELECTROOPTIC MASKS USED IN HADAMARD-TRANSFORM SPECTROMETRY
Authors: XIONG JZ DYER RA DYER SA
Citation: Jz. Xiong et al., COMPUTATIONALLY EFFICIENT SPECTRUM-RECOVERY METHODS WHICH COMPENSATE FOR STATIC AND DYNAMIC NONIDEALITIES IN ELECTROOPTIC MASKS USED IN HADAMARD-TRANSFORM SPECTROMETRY, IEEE transactions on instrumentation and measurement, 45(5), 1996, pp. 854-859
STRUCTURE AND BONDING OF ORGANOSILICON COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY
Authors: XIONG JZ JIANG DT DIXON CE BAINES KM SHAM TK
Citation: Jz. Xiong et al., STRUCTURE AND BONDING OF ORGANOSILICON COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY, Canadian journal of chemistry, 74(11), 1996, pp. 2229-2239
XANES OF ORGANOSILICON CLUSTERS AT THE SI K-EDGE AND L-EDGE
Authors: XIONG JZ JIANG DT LIU ZF BAINES KM SHAM TK TAN KH FENG XH
Citation: Jz. Xiong et al., XANES OF ORGANOSILICON CLUSTERS AT THE SI K-EDGE AND L-EDGE, Physica. B, Condensed matter, 209(1-4), 1995, pp. 451-452
INNER-SHELL SPECTROSCOPY OF COMPOUNDS CONTAINING SI-SI BONDS - IS THERE A LOCALIZED, LOW-ENERGY SI-SI RESONANCE
Authors: URQUHART SG XIONG JZ WEN AT SHAM TK BAINES KM DESOUZA GGB HITCHCOCK AP
Citation: Sg. Urquhart et al., INNER-SHELL SPECTROSCOPY OF COMPOUNDS CONTAINING SI-SI BONDS - IS THERE A LOCALIZED, LOW-ENERGY SI-SI RESONANCE, Chemical physics, 189(3), 1994, pp. 757-768
PHOTOELECTRON-SPECTRA OF ORGANOMETALLIC COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - VALENCE-BAND STUDIES
Authors: SUTHERLAND DGJ XIONG JZ LIU ZF SHAM TK BANCROFT GM BAINES KM TAN KH
Citation: Dgj. Sutherland et al., PHOTOELECTRON-SPECTRA OF ORGANOMETALLIC COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - VALENCE-BAND STUDIES, Organometallics, 13(9), 1994, pp. 3671-3678
PHOTOCONDUCTIVITY MEASUREMENTS OF X-RAY-ABSORPTION FINE-STRUCTURES INLIQUIDS IN THE SOFT-X-RAY REGION - SI AND CL K-EDGE
Authors: SHAM TK HOLROYD RA XIONG JZ FENG XH YANG BX
Citation: Tk. Sham et al., PHOTOCONDUCTIVITY MEASUREMENTS OF X-RAY-ABSORPTION FINE-STRUCTURES INLIQUIDS IN THE SOFT-X-RAY REGION - SI AND CL K-EDGE, JPN J A P 1, 32, 1993, pp. 209-213
THE RULES OF CHANGES OF BOND STRENGTHS IN 3 MEMBER HETEROCYCLIC-COMPOUNDS WITH HETEROATOMS BE, B, N, O AND S
Authors: ZHOU YX XIONG JZ PAN DK
Citation: Yx. Zhou et al., THE RULES OF CHANGES OF BOND STRENGTHS IN 3 MEMBER HETEROCYCLIC-COMPOUNDS WITH HETEROATOMS BE, B, N, O AND S, Huaxue xuebao, 51(5), 1993, pp. 444-450
SI K-EDGE AND GE K-EDGE X-RAY-ABSORPTION SPECTROSCOPY OF THE SI-GE INTERFACE IN [(SI)M(GE)N]P ATOMIC LAYER SUPERLATTICES
Authors: HITCHCOCK AP TYLISZCZAK T AEBI P XIONG JZ SHAM TK BAINES KM MUELLER KA FENG XH CHEN JM YANG BX LU ZH BARIBEAU JM JACKMAN TE
Citation: Ap. Hitchcock et al., SI K-EDGE AND GE K-EDGE X-RAY-ABSORPTION SPECTROSCOPY OF THE SI-GE INTERFACE IN [(SI)M(GE)N]P ATOMIC LAYER SUPERLATTICES, Surface science, 291(3), 1993, pp. 349-369
SI K-EDGE X-RAY-ABSORPTION FINE-STRUCTURE STUDIES OF POROUS SILICON
Authors: SHAM TK FENG XH JIANG DT YANG BX XIONG JZ BZOWSKI A HOUGHTON DC BRYSKIEWICZ B WANG E
Citation: Tk. Sham et al., SI K-EDGE X-RAY-ABSORPTION FINE-STRUCTURE STUDIES OF POROUS SILICON, Canadian journal of physics, 70(10-11), 1992, pp. 813-818
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