Citation: T. Yodo, ANISOTROPIC STRAIN ESTIMATED FROM LATTICE-PARAMETERS MEASURED BY BONDMETHOD USING X-RAY-DIFFRACTION, IN MOLECULAR-BEAM EPITAXY-GROWN GAAS SI(001)/, JPN J A P 1, 37(2), 1998, pp. 450-454
Citation: M. Yano et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE CDMNTE CDTE SUPERLATTICES ON (100)GAAS SUBSTRATES/, Journal of crystal growth, 175, 1997, pp. 665-669
Citation: T. Yodo et S. Kimura, AGE AND GROWTH OF THE LARGEMOUTH BASS MICROPTERUS-SALMOIDES IN LAKE-SHORENJI AND LAKE-NISHINOKO, CENTRAL JAPAN, Fisheries science, 62(4), 1996, pp. 524-528
Citation: T. Yodo, CHARACTERIZATION OF GAAS FILMS GROWN ON VICINAL SI(110) SUBSTRATES BYMOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(9A), 1995, pp. 4631-4640
Citation: T. Yodo et M. Tamura, EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE STRUCTURAL AND CRYSTALLINE QUALITIES OF GAAS HETEROEPITAXIAL LAYERS GROWN ON SI SUBSTRATES USING 2-STEP AND DIRECT-METHODS BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(7A), 1995, pp. 3457-3466
Citation: T. Yodo et al., IN-SITU OBSERVATIONS OF GAAS INITIAL GROWTH ON SI SUBSTRATES STUDIED USING AN ULTRAHIGH-VACUUM TRANSMISSION-ELECTRON MICROSCOPE MOLECULAR-BEAM EPITAXY SYSTEM, JPN J A P 2, 34(4B), 1995, pp. 491-494
Citation: T. Yodo et M. Tamura, GAAS HETEROEPITAXIAL GROWTH ON SI SUBSTRATES WITH THIN SI INTERLAYERSIN-SITU ANNEALED AT HIGH-TEMPERATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1000-1005
Citation: T. Yodo et M. Tamura, INITIAL GROWTH OF GAAS ON SI(111) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 154(1-2), 1995, pp. 85-91
Citation: T. Saitoh et al., ATOM-REARRANGEMENT IN GE LAYER GROWN ON SI SUBSTRATE DURING ANNEAL OBSERVED IN REAL-TIME BY COAXIAL IMPACT COLLISION ION-SCATTERING SPECTROSCOPY, Journal of crystal growth, 150(1-4), 1995, pp. 955-959
Citation: M. Tamura et al., REARRANGEMENT OF MISFIT DISLOCATIONS IN GAAS ON SI BY POSTGROWTH ANNEALING, Journal of crystal growth, 150(1-4), 1995, pp. 654-660
Citation: M. Tamura et al., THREADING DISLOCATIONS IN GAAS ON SI GROWN WITH SIMILAR-TO-1 NM THICKSI INTERLAYERS, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 145-155
Citation: T. Yodo et al., RELATIONSHIP BETWEEN THE OPTICAL AND STRUCTURAL-PROPERTIES IN GAAS HETEROEPITAXIAL LAYERS GROWN ON SI SUBSTRATES, Journal of crystal growth, 141(3-4), 1994, pp. 331-342
Citation: T. Yodo et al., GAAS HETEROEPITAXIAL GROWTH ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 76(11), 1994, pp. 7630-7632
Citation: Ac. Alton et T. Yodo, EFFECTS OF ULTRAVIOLET-IRRADIATION DURING GROWTH OF ZNSE EPILAYERS BYATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYL ZINC AND H2SE, Journal of crystal growth, 130(3-4), 1993, pp. 405-410
Citation: Je. Palmer et al., GROWTH AND CHARACTERIZATION OF GASE AND GAAS GASE ON AS-PASSIVATED SI(111) SUBSTRATES/, Journal of applied physics, 74(12), 1993, pp. 7211-7222