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Results:
1-21
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Results: 21
Authors:
YODO T
Citation: T. Yodo, ANISOTROPIC STRAIN ESTIMATED FROM LATTICE-PARAMETERS MEASURED BY BONDMETHOD USING X-RAY-DIFFRACTION, IN MOLECULAR-BEAM EPITAXY-GROWN GAAS SI(001)/, JPN J A P 1, 37(2), 1998, pp. 450-454
Authors:
YANO M
KOIKE K
FURUSHOU T
YODO T
Citation: M. Yano et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE CDMNTE CDTE SUPERLATTICES ON (100)GAAS SUBSTRATES/, Journal of crystal growth, 175, 1997, pp. 665-669
Authors:
YODO T
KIMURA S
Citation: T. Yodo et S. Kimura, AGE AND GROWTH OF THE LARGEMOUTH BASS MICROPTERUS-SALMOIDES IN LAKE-SHORENJI AND LAKE-NISHINOKO, CENTRAL JAPAN, Fisheries science, 62(4), 1996, pp. 524-528
Authors:
YODO T
Citation: T. Yodo, CHARACTERIZATION OF GAAS FILMS GROWN ON VICINAL SI(110) SUBSTRATES BYMOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(9A), 1995, pp. 4631-4640
Authors:
YODO T
TAMURA M
Citation: T. Yodo et M. Tamura, EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE STRUCTURAL AND CRYSTALLINE QUALITIES OF GAAS HETEROEPITAXIAL LAYERS GROWN ON SI SUBSTRATES USING 2-STEP AND DIRECT-METHODS BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(7A), 1995, pp. 3457-3466
Authors:
YODO T
TAMURA M
TOMITA M
WAZAWA M
Citation: T. Yodo et al., IN-SITU OBSERVATIONS OF GAAS INITIAL GROWTH ON SI SUBSTRATES STUDIED USING AN ULTRAHIGH-VACUUM TRANSMISSION-ELECTRON MICROSCOPE MOLECULAR-BEAM EPITAXY SYSTEM, JPN J A P 2, 34(4B), 1995, pp. 491-494
Authors:
YODO T
Citation: T. Yodo, INITIAL GROWTH OF GAAS ON VICINAL SI(111) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 34(10A), 1995, pp. 1251-1253
Authors:
YODO T
TAMURA M
Citation: T. Yodo et M. Tamura, GAAS HETEROEPITAXIAL GROWTH ON SI SUBSTRATES WITH THIN SI INTERLAYERSIN-SITU ANNEALED AT HIGH-TEMPERATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1000-1005
Authors:
YODO T
TAMURA M
Citation: T. Yodo et M. Tamura, INITIAL GROWTH OF GAAS ON SI(111) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 154(1-2), 1995, pp. 85-91
Authors:
SAITOH T
TAMURA M
PALMER JE
YODO T
Citation: T. Saitoh et al., ATOM-REARRANGEMENT IN GE LAYER GROWN ON SI SUBSTRATE DURING ANNEAL OBSERVED IN REAL-TIME BY COAXIAL IMPACT COLLISION ION-SCATTERING SPECTROSCOPY, Journal of crystal growth, 150(1-4), 1995, pp. 955-959
Authors:
TAMURA M
YODO T
SAITOH T
PALMER J
Citation: M. Tamura et al., REARRANGEMENT OF MISFIT DISLOCATIONS IN GAAS ON SI BY POSTGROWTH ANNEALING, Journal of crystal growth, 150(1-4), 1995, pp. 654-660
Authors:
YODO T
TAMURA M
SAITOH T
Citation: T. Yodo et al., INITIAL GROWTH OF GAAS ON VICINAL SI(110) SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 665-670
Authors:
PALMER JE
SAITOH T
YODO T
TAMURA M
Citation: Je. Palmer et al., GAAS ON SI(111) WITH A LAYERED STRUCTURE GASE BUFFER LAYER, Journal of crystal growth, 150(1-4), 1995, pp. 685-690
Authors:
TAMURA M
YODO T
Citation: M. Tamura et T. Yodo, MISFIT AND THREADING DISLOCATIONS IN GAAS ON VICINAL (110) SI, Journal of crystal growth, 147(3-4), 1995, pp. 274-282
Authors:
PALMER JE
SAITOH T
YODO T
TAMURA M
Citation: Je. Palmer et al., GROWTH OF GASE ON AS-PASSIVATED SI(111) SUBSTRATES, Journal of crystal growth, 147(3-4), 1995, pp. 283-291
Authors:
TAMURA M
SAITOH T
PALMER JE
YODO T
Citation: M. Tamura et al., THREADING DISLOCATIONS IN GAAS ON SI GROWN WITH SIMILAR-TO-1 NM THICKSI INTERLAYERS, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 145-155
Authors:
YODO T
TAMURA M
SAITOH T
Citation: T. Yodo et al., RELATIONSHIP BETWEEN THE OPTICAL AND STRUCTURAL-PROPERTIES IN GAAS HETEROEPITAXIAL LAYERS GROWN ON SI SUBSTRATES, Journal of crystal growth, 141(3-4), 1994, pp. 331-342
Authors:
YODO T
TAMURA M
LOPEZ M
KAJIKAWA Y
Citation: T. Yodo et al., GAAS HETEROEPITAXIAL GROWTH ON VICINAL SI(110) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 76(11), 1994, pp. 7630-7632
Authors:
PALMER JE
SAITOH T
YODO T
TAMURA M
Citation: Je. Palmer et al., GROWTH AND CHARACTERIZATION OF GAAS GASE/SI HETEROSTRUCTURES/, JPN J A P 2, 32(8B), 1993, pp. 120001126-120001129
Authors:
ALTON AC
YODO T
Citation: Ac. Alton et T. Yodo, EFFECTS OF ULTRAVIOLET-IRRADIATION DURING GROWTH OF ZNSE EPILAYERS BYATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYL ZINC AND H2SE, Journal of crystal growth, 130(3-4), 1993, pp. 405-410
Authors:
PALMER JE
SAITOH T
YODO T
TAMURA M
Citation: Je. Palmer et al., GROWTH AND CHARACTERIZATION OF GASE AND GAAS GASE ON AS-PASSIVATED SI(111) SUBSTRATES/, Journal of applied physics, 74(12), 1993, pp. 7211-7222
Risultati:
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