Citation: Sk. Si et al., OPTICAL-PROPERTIES OF CD-DIFFUSED AND ZN-DIFFUSED LAYERS IN INP, Journal of the Korean Physical Society, 32(2), 1998, pp. 162-165
Citation: Ch. Lee et E. Yoon, MICROSTRUCTURE AND PROPERTIES OF LASER REMELTED CHROMIUM CARBIDE LAYER, Surface & coatings technology, 99(1-2), 1998, pp. 203-212
Authors:
JOO SJ
YOON E
HWANG SH
WHANG KW
CHUN SK
KIM YD
Citation: Sj. Joo et al., GROWTH OF SIGE SI MULTIPLE-QUANTUM WELLS BY ULTRA-HIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION/, Thin solid films, 321, 1998, pp. 111-115
Citation: C. Sone et al., EFFECTS OF HYDROGEN ON CARBON INCORPORATION IN GAN GROWN BY REMOTE PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 190, 1998, pp. 321-324
Citation: Y. Moon et al., LOW-TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF ZN-DOPED INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(4), 1998, pp. 2261-2265
Authors:
NAKAMURA F
KIM YD
YOON E
FORBES DV
COLEMAN JJ
Citation: F. Nakamura et al., THICKNESS MONITORING OF GAAS GROWTH BY SURFACE PHOTOABSORPTION IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(2), 1998, pp. 775-778
Citation: L. Lichtenbergova et al., MOLECULAR-BASIS FOR SN-2 ARACHIDONYL SPECIFICITY OF CYTOSOLIC PHOSPHOLIPASE A(2), The FASEB journal, 11(9), 1997, pp. 2857-2857
Authors:
KIM YD
HWANG SH
WHANG KW
YOON E
KLEIN MV
BARIBEAU JM
Citation: Yd. Kim et al., OBSERVATION OF E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICE, Journal of the Korean Physical Society, 30, 1997, pp. 284-287
Authors:
KIM YD
NAKAMURA F
YOON E
FORBES DV
LI X
COLEMAN JJ
Citation: Yd. Kim et al., SURFACE PHOTOABSORPTION MONITORING OF THE GROWTH OF GAAS AND INGAAS AT 650-DEGREES-C BY MOCVD, Journal of electronic materials, 26(10), 1997, pp. 1164-1168
Citation: Tw. Lee et al., ASYMMETRIC GROWTH-BEHAVIOR OF SELECTIVELY GROWN INP ON VICINAL (100)SURFACES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 182(3-4), 1997, pp. 299-308
Authors:
KIM YD
KLEIN MV
BARIBEAU JM
HWANG SH
WHANG KW
YOON E
Citation: Yd. Kim et al., SPECTROSCOPIC ELLIPSOMETRY STUDY ON E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICES, Journal of applied physics, 81(12), 1997, pp. 7952-7955
Citation: Kh. Hwang et al., AMORPHOUS (100) PLATELET FORMATION IN (100)SI INDUCED BY HYDROGEN PLASMA TREATMENT, Journal of applied physics, 81(1), 1997, pp. 74-77
Citation: Mh. Kim et al., CHANGES IN THE GROWTH MODE OF LOW-TEMPERATURE GAN BUFFER LAYERS WITH NITROGEN PLASMA NITRIDATION OF SAPPHIRE SUBSTRATES, Applied physics letters, 71(9), 1997, pp. 1228-1230
Authors:
HWANG SH
EO YP
SEO JH
WHANG KW
YOON E
TAE HS
Citation: Sh. Hwang et al., NONCONTACT MINORITY-CARRIER LIFETIME MEASUREMENT OF SI AND SIGE EPILAYERS PREPARED BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1033-1036
Authors:
PARK JW
HWANG KH
JOO SJ
YOON E
HWANG SH
WHANG KW
Citation: Jw. Park et al., IN-SITU BORON DOPING OF SI AND SI1-XGEX EPITAXIAL LAYERS BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1072-1075
Authors:
KIM YD
NAKAMURA F
YOON E
FORBES DV
COLEMAN JJ
Citation: Yd. Kim et al., MONOLAYER EPITAXY OF GAAS AT 650-DEGREES-C BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION WITH SURFACE PHOTOABSORPTION MONITORING, Applied physics letters, 69(27), 1996, pp. 4209-4211
Authors:
TAE HS
PARK SJ
HWANG SH
HWANG KH
YOON E
WHANG KW
SONG SA
Citation: Hs. Tae et al., LOW-TEMPERATURE IN-SITU CLEANING OF SILICON(100) SURFACE BY ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 908-913
Authors:
PEREZPINZON MA
MAIER CM
SUN GH
YOON E
BELL TE
POWELL M
KOTAKE A
GIFFARD RG
STEINBERG GK
Citation: Ma. Perezpinzon et al., CGS-19755 - CORRELATION OF IN-VITRO NEUROPROTECTION, PROTECTION AGAINST EXPERIMENTAL-ISCHEMIA AND CSF LEVELS IN CEREBROVASCULAR SURGERY PATIENTS, Stroke, 26(1), 1995, pp. 182-182
Citation: Hs. Tae et al., EFFECTS OF PROCESS PARAMETERS ON LOW-TEMPERATURE SILICON HOMOEPITAXY BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(6), 1995, pp. 4112-4117
Citation: Kh. Hwang et al., SURFACE-ROUGHNESS AND DEFECT MORPHOLOGY IN ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA CLEANED (100)SILICON AT LOW-TEMPERATURES, Applied physics letters, 67(24), 1995, pp. 3590-3592
Authors:
PEREZPINZON MA
SUN GH
YOON E
STEINBERG GK
LUTZ P
Citation: Ma. Perezpinzon et al., NEURONAL PROTECTION TO FOCAL CEREBRAL-ISCHEMIA BY THE COMPETITIVE NMDA RECEPTOR ANTAGONIST CGS-19755 IN RABBITS, The FASEB journal, 8(5), 1994, pp. 10000654-10000654
Citation: E. Yoon et Kd. Wise, A WIDE-BAND MONOLITHIC RMS-DC CONVERTER USING MICROMACHINED DIAPHRAGMSTRUCTURSE, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1666-1668
Authors:
GREGUS JA
GREEN CA
YOON E
OSTERMAYER FW
HAYES TR
PAWELEK R
GOTTSCHO RA
SOHAIL S
NAQVI H
Citation: Ja. Gregus et al., REAL-TIME LATENT IMAGE MONITORING DURING HOLOGRAPHIC FABRICATION OF SUBMICRON DIFFRACTION GRATINGS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2468-2472
Authors:
AYDIL ES
GIAPIS KP
GOTTSCHO RA
DONNELLY VM
YOON E
Citation: Es. Aydil et al., AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 195-205