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Results: 1-25/29
Authors:
ZUO SL
BI WG
TU CW
YU ET
Citation: Sl. Zuo et al., ATOMIC-SCALE COMPOSITIONAL STRUCTURE OF INASP INP AND INNASP/INP HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2395-2398
Authors:
STEIN BL
YU ET
CROKE ET
HUNTER AT
LAURSEN T
MAYER JW
AHN CC
Citation: Bl. Stein et al., ELECTRONIC-PROPERTIES OF SI SI1-X-YGEXCY HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1639-1643
Authors:
LEW AY
ZUO SL
YU ET
MILES RH
Citation: Ay. Lew et al., CORRELATION BETWEEN ATOMIC-SCALE STRUCTURE AND MOBILITY ANISOTROPY ININAS GA1-XINXSB SUPERLATTICES/, Physical review. B, Condensed matter, 57(11), 1998, pp. 6534-6539
Authors:
STEIN BL
YU ET
CROKE ET
HUNTER AT
LAURSEN T
MAYER JW
AHN CC
Citation: Bl. Stein et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SI SI1-X-YGEXCY HETEROSTRUCTURES/, Applied physics letters, 73(5), 1998, pp. 647-649
Authors:
YUN CH
WENGROW AB
CHEUNG NW
ZHENG Y
WELTY RJ
GUAN ZF
SMITH KV
ASBECK PM
YU ET
LAU SS
Citation: Ch. Yun et al., TRANSFER OF PATTERNED ION-CUT SILICON LAYERS, Applied physics letters, 73(19), 1998, pp. 2772-2774
Authors:
YU ET
DANG XZ
YU LS
QIAO D
ASBECK PM
LAU SS
SULLIVAN GJ
BOUTROS KS
REDWING JM
Citation: Et. Yu et al., SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT, Applied physics letters, 73(13), 1998, pp. 1880-1882
Authors:
DANG XZ
WANG CD
YU ET
BOUTROS KS
REDWING JM
Citation: Xz. Dang et al., PERSISTENT PHOTOCONDUCTIVITY AND DEFECT LEVELS IN N-TYPE ALGAN GAN HETEROSTRUCTURES/, Applied physics letters, 72(21), 1998, pp. 2745-2747
Authors:
ZUO SL
BI WG
TU CW
YU ET
Citation: Sl. Zuo et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF ATOMIC-SCALE CLUSTERING IN INASP INP HETEROSTRUCTURES/, Applied physics letters, 72(17), 1998, pp. 2135-2137
Authors:
WANG CD
YU LS
LAU SS
YU ET
KIM W
BOTCHKAREV AE
MORKOC H
Citation: Cd. Wang et al., DEEP-LEVEL DEFECTS IN N-TYPE GAN GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(10), 1998, pp. 1211-1213
Authors:
STEIN BL
YU ET
CROKE ET
HUNTER AT
LAURSEN T
BAIR AE
MAYER JW
AHN CC
Citation: Bl. Stein et al., MEASUREMENT OF BAND OFFSETS IN SI SI1-XGEX AND SI/SI1-X-YGEXCY HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1108-1111
Authors:
YU ET
PENNYCOOK SJ
Citation: Et. Yu et Sj. Pennycook, NANOSCALE CHARACTERIZATION OF MATERIALS, MRS bulletin, 22(8), 1997, pp. 17-21
Authors:
YU ET
Citation: Et. Yu, CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES, MRS bulletin, 22(8), 1997, pp. 22-26
Authors:
ASBECK PM
YU ET
LAU SS
SULLIVAN GJ
VANHOVE J
REDWING J
Citation: Pm. Asbeck et al., PIEZOELECTRIC CHARGE-DENSITIES IN ALGAN GAN HFETS/, Electronics Letters, 33(14), 1997, pp. 1230-1231
Authors:
YU ET
Citation: Et. Yu, CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY, Chemical reviews, 97(4), 1997, pp. 1017-1044
Authors:
YU ET
SULLIVAN GJ
ASBECK PM
WANG CD
QIAO D
LAU SS
Citation: Et. Yu et al., MEASUREMENT OF PIEZOELECTRICALLY INDUCED CHARGE IN GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, Applied physics letters, 71(19), 1997, pp. 2794-2796
Authors:
LIU QZ
SHEN L
SMITH KV
TU CW
YU ET
LAU SS
PERKINS NR
KUECH TF
Citation: Qz. Liu et al., EPITAXY OF AL FILMS ON GAN STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-FORCE MICROSCOPY, Applied physics letters, 70(8), 1997, pp. 990-992
Authors:
STEIN BL
YU ET
CROKE ET
HUNTER AT
LAURSEN T
BAIR AE
MAYER JW
AHN CC
Citation: Bl. Stein et al., BAND OFFSETS IN SI SI1-X-YGEXCY HETEROJUNCTIONS MEASURED BY ADMITTANCE SPECTROSCOPY/, Applied physics letters, 70(25), 1997, pp. 3413-3415
Authors:
LEW AY
ZUO SL
YU ET
MILES RH
Citation: Ay. Lew et al., ANISOTROPY AND GROWTH-SEQUENCE DEPENDENCE OF ATOMIC-SCALE INTERFACE STRUCTURE IN INAS GA1-XINXSB SUPERLATTICES/, Applied physics letters, 70(1), 1997, pp. 75-77
Authors:
LEW AY
YU ET
ZHANG YH
Citation: Ay. Lew et al., ATOMIC-SCALE STRUCTURE OF INAS INAS1-XSBX SUPERLATTICES GROWN BY MODULATED MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2940-2943
Authors:
YU ET
Citation: Et. Yu, NANOSCALE CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS AND DEVICES USING SCANNING PROBE TECHNIQUES, Materials science & engineering. R, Reports, 17(4-5), 1996, pp. 147-206
Authors:
LEW AY
YAN CH
TU CW
YU ET
Citation: Ay. Lew et al., CHARACTERIZATION OF ARSENIDE PHOSPHIDE HETEROSTRUCTURE INTERFACES BY SCANNING-TUNNELING-MICROSCOPY/, Applied surface science, 104, 1996, pp. 522-528
Authors:
YAN CH
LEW AY
YU ET
TU CW
Citation: Ch. Yan et al., P-2-INDUCED P AS EXCHANGE ON GAAS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH INTERRUPTIONS/, Journal of crystal growth, 164(1-4), 1996, pp. 77-83
Authors:
YU ET
BARMAK K
RONSHEIM P
JOHNSON MB
MCFARLAND P
HALBOUT JM
Citation: Et. Yu et al., 2-DIMENSIONAL PROFILING OF SHALLOW JUNCTIONS IN SI METAL-OXIDE-SEMICONDUCTOR STRUCTURES USING SCANNING TUNNELING SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of applied physics, 79(4), 1996, pp. 2115-2121
Authors:
LEW AY
YAN CH
TU CW
YU ET
Citation: Ay. Lew et al., CHARACTERIZATION OF ARSENIDE PHOSPHIDE HETEROSTRUCTURE INTERFACES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(7), 1995, pp. 932-934
Authors:
WANG MW
SWENBERG JF
MILES RJ
PHILLIPS MC
YU ET
MCCALDIN JO
GRANT RW
MCGILL TC
Citation: Mw. Wang et al., MEASUREMENT OF THE MGSE CD0.54ZN0.46SE VALENCE-BAND OFFSET BY X-RAY PHOTOELECTRON-SPECTROSCOPY/, Journal of crystal growth, 138(1-4), 1994, pp. 508-512