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Results: 1-10 |
Results: 10
PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE
Authors: SOBOLEV NA GUSEV OB SHEK EI VDOVIN VI YUGOVA TG EMELYANOV AM
Citation: Na. Sobolev et al., PHOTOLUMINESCENCE AND STRUCTURAL DEFECTS IN ERBIUM-IMPLANTED SILICON ANNEALED AT HIGH-TEMPERATURE, Applied physics letters, 72(25), 1998, pp. 3326-3328
HIGH-TEMPERATURE MICROHARDNESS OF EPITAXIAL LAYERS OF QUATERNARY A(III)B(V)-BASED SOLID-SOLUTIONS
Authors: MEZHENNYI MV MILVIDSKII MG YUGOVA TG MALKOVA NV TUNITSKAYA IV
Citation: Mv. Mezhennyi et al., HIGH-TEMPERATURE MICROHARDNESS OF EPITAXIAL LAYERS OF QUATERNARY A(III)B(V)-BASED SOLID-SOLUTIONS, Crystallography reports, 42(3), 1997, pp. 477-484
ANISOTROPY EFFECTS IN THE FORMATION OF A REGULAR STEPPED STRUCTURE ONTHE SURFACE OF HOMOEPITAXIAL GALLIUM-ARSENIDE
Authors: VORONKOV VV ZHUKOVA LA MILVIDSKII MG SIMONOVA TV YUGOVA TG ANOKHINA EN
Citation: Vv. Voronkov et al., ANISOTROPY EFFECTS IN THE FORMATION OF A REGULAR STEPPED STRUCTURE ONTHE SURFACE OF HOMOEPITAXIAL GALLIUM-ARSENIDE, Kristallografia, 42(1), 1997, pp. 154-156
HIGH-TEMPERATURE MICROHARDNESS OF A(III)B (IV) SEMICONDUCTOR COMPOUNDS
Authors: MEZHENNYI MV YUGOVA TG
Citation: Mv. Mezhennyi et Tg. Yugova, HIGH-TEMPERATURE MICROHARDNESS OF A(III)B (IV) SEMICONDUCTOR COMPOUNDS, Kristallografia, 41(3), 1996, pp. 534-542
SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES
Authors: ABRAMOV AV DERYAGIN NG MILVIDSKII MG TRETYAKOV DN YUGOVA TG
Citation: Av. Abramov et al., SPECIFIC STRUCTURAL FEATURES OF GAAS EPIT AXIAL LAYERS GROWN BY THE LIQUID-PHASE EPITAXY ON SI(111) SUBSTRATES, Kristallografia, 40(5), 1995, pp. 906-912
EFFECT OF VARIOUS FACTORS UPON THE STOICHIOMETRY OF GAAS HOMOEPITAXIAL LAYERS GROWN BY LPE
Authors: GOVORKOV AV NOVIKOV AG MILVIDSKII MG SHLENSKII AA FOMIN VG YUGOVA TG
Citation: Av. Govorkov et al., EFFECT OF VARIOUS FACTORS UPON THE STOICHIOMETRY OF GAAS HOMOEPITAXIAL LAYERS GROWN BY LPE, Physica status solidi. a, Applied research, 144(1), 1994, pp. 121-130
EFFECT OF ALLOY COMPOSITION ON DEFECT FORMATION IN GEXSI1-X SI HETEROSTRUCTURES OBTAINED BY MOLECULAR-BEAM EPITAXY
Authors: VDOVIN VI MILVIDSKII MG YUGOVA TG LYUTOVICH KL SAIDOV SM
Citation: Vi. Vdovin et al., EFFECT OF ALLOY COMPOSITION ON DEFECT FORMATION IN GEXSI1-X SI HETEROSTRUCTURES OBTAINED BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 141(1-2), 1994, pp. 109-118
INVESTIGATION OF THE FORMATION OF TRANSITION LAYERS DURING LPE GROWTHOF GAAS
Authors: BRUK AS GOVORKOV AV MILVIDSKII MG POPOVA EV SHLENSKII AA YUGOVA TG
Citation: As. Bruk et al., INVESTIGATION OF THE FORMATION OF TRANSITION LAYERS DURING LPE GROWTHOF GAAS, Scanning, 15(6), 1993, pp. 333-337
DEFECT-FORMING IN SIXGE1-X GE(111) HETERO STRUCTURES PREPARED BY THE HYDRIDE EPITAXY TECHNIQUE/
Authors: VDOVIN VI KUZNETSOV OA MILVIDSKII MG ORLOV LK YUGOVA TG
Citation: Vi. Vdovin et al., DEFECT-FORMING IN SIXGE1-X GE(111) HETERO STRUCTURES PREPARED BY THE HYDRIDE EPITAXY TECHNIQUE/, Kristallografia, 38(4), 1993, pp. 269-271
ANTIPHASE BOUNDARIES IN GAAS-LAYERS ON SI AND GE
Authors: VDOVIN VI MILVIDSKII MG YUGOVA TG
Citation: Vi. Vdovin et al., ANTIPHASE BOUNDARIES IN GAAS-LAYERS ON SI AND GE, Journal of crystal growth, 132(3-4), 1993, pp. 477-482
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