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Results: 1-25 | 26-47
Results: 1-25/47
Tunable 3.3 mu m InAsSb/InAsSbP diode lasers: a new concept of fast lasingdue to nonlinear optical effects
Authors: Yakovlev, YP Danilova, AP Imenkov, AN Kolchanova, NM Sherstnev, VV
Citation: Yp. Yakovlev et al., Tunable 3.3 mu m InAsSb/InAsSbP diode lasers: a new concept of fast lasingdue to nonlinear optical effects, PHI T ROY A, 359(1780), 2001, pp. 523-531
Ultimate InAsSbP solid solutions for 2.6-2.8-mu m LEDs
Authors: Romanov, VV Ivanov, EV Imenkov, AN Kolchanova, NM Moiseev, KD Stoyanov, ND Yakovlev, YP
Citation: Vv. Romanov et al., Ultimate InAsSbP solid solutions for 2.6-2.8-mu m LEDs, TECH PHYS L, 27(7), 2001, pp. 611-614
High-efficiency 3.4-4.4 mu m light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature
Authors: Zhurtanov, B Ivanov, EV Imenkov, AN Kolchanova, NM Rozov, AE Stoyanov, N Yakovlev, YP
Citation: B. Zhurtanov et al., High-efficiency 3.4-4.4 mu m light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature, TECH PHYS L, 27(3), 2001, pp. 173-175
Broken-gap heterojunction in the p-GaSb-n-InAs1-xSbx (0 <= x <= 0.18) system
Authors: Kizhaev, SS Molchanov, SS Zotova, NV Grebenshchikova, EA Yakovlev, YP Hulicius, E Simecek, T Melichar, K Pangrac, J
Citation: Ss. Kizhaev et al., Broken-gap heterojunction in the p-GaSb-n-InAs1-xSbx (0 <= x <= 0.18) system, TECH PHYS L, 27(11), 2001, pp. 964-966
InAs/InAsSbP light-emitting structures grown by gas-phase epitaxy
Authors: Grebenshchikova, EA Zotova, NV Kizhaev, SS Molchanov, SS Yakovlev, YP
Citation: Ea. Grebenshchikova et al., InAs/InAsSbP light-emitting structures grown by gas-phase epitaxy, TECH PHYS, 46(9), 2001, pp. 1125-1127
The role of lead in growing Ga1-xInxAsySb1-y solid solutions by liquid-phase epitaxy
Authors: Voronina, TI Lagunova, TS Kunitsyna, EV Parkhomenko, YA Vasyukov, DA Yakovlev, YP
Citation: Ti. Voronina et al., The role of lead in growing Ga1-xInxAsySb1-y solid solutions by liquid-phase epitaxy, SEMICONDUCT, 35(8), 2001, pp. 904-911
Physical properties of Si20Te80 glasses with various structures and their use in acoustooptic devices
Authors: Kulakova, LA Melekh, BT Yakhkind, EZ Kartenko, NF Bakharev, VI Yakovlev, YP
Citation: La. Kulakova et al., Physical properties of Si20Te80 glasses with various structures and their use in acoustooptic devices, SEMICONDUCT, 35(6), 2001, pp. 630-636
Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures
Authors: Stoyanov, ND Mikhailova, MP Andreichuk, OV Moiseev, KD Andreev, IA Afrailov, MA Yakovlev, YP
Citation: Nd. Stoyanov et al., Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures, SEMICONDUCT, 35(4), 2001, pp. 453-458
Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties
Authors: Voronina, TI Zhurtanov, BE Lagunova, TS Mikhailova, MP Moiseev, KD Rozov, AE Yakovlev, YP
Citation: Ti. Voronina et al., Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties, SEMICONDUCT, 35(3), 2001, pp. 331-337
Current-tunable lasers with a narrow emission line operating at 3.3 mu m
Authors: Imenkov, AN Kolchanova, NM Kubat, P Moiseev, KD Civis, C Yakovlev, YP
Citation: An. Imenkov et al., Current-tunable lasers with a narrow emission line operating at 3.3 mu m, SEMICONDUCT, 35(3), 2001, pp. 360-364
InAsSb/InAsSbP double-heterostructure lasers emitting in the 3-4 mu m spectral range
Authors: Danilova, TN Imenkov, AN Kolchanova, NM Yakovlev, YP
Citation: Tn. Danilova et al., InAsSb/InAsSbP double-heterostructure lasers emitting in the 3-4 mu m spectral range, SEMICONDUCT, 35(12), 2001, pp. 1404-1417
Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAsheterojunction and size-quantization levels at the interface
Authors: Bazhenov, NL Zegrya, GG Mikhailova, MP Mynbaev, KD Smirnov, VA Yakovlev, YP
Citation: Nl. Bazhenov et al., Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAsheterojunction and size-quantization levels at the interface, SEMIC SCI T, 16(9), 2001, pp. 812-815
Quantum magnetotransport at a type II broken-gap single heterointerface
Authors: Moiseev, KD Berezovets, VA Mikhailova, MP Nizhankovskii, VI Parfeniev, RV Yakovlev, YP
Citation: Kd. Moiseev et al., Quantum magnetotransport at a type II broken-gap single heterointerface, SURF SCI, 482, 2001, pp. 1083-1089
The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 mu m (2800-3100 cm(-1))
Authors: Imenkov, AN Kolchanova, NM Yakovlev, YP Kubat, P Civis, S
Citation: An. Imenkov et al., The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 mu m (2800-3100 cm(-1)), REV SCI INS, 72(4), 2001, pp. 1988-1992
Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures
Authors: Moiseev, KD Krier, A Yakovlev, YP
Citation: Kd. Moiseev et al., Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures, J APPL PHYS, 90(8), 2001, pp. 3988-3992
Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
Authors: Moiseev, KD Mikhailova, MP Yakovlev, YP Simecek, T Hulicius, E Oswald, J
Citation: Kd. Moiseev et al., Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs, J APPL PHYS, 90(6), 2001, pp. 2813-2817
Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
Authors: Ivanov, SV Solov'ev, VA Moiseev, KD Sedova, IV Terent'ev, YV Toropov, AA Meltzer, BY Mikhailova, MP Yakovlev, YP Kop'ev, PS
Citation: Sv. Ivanov et al., Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy, APPL PHYS L, 78(12), 2001, pp. 1655-1657
A tunable single-mode 3.2 mu m laser based on an InAsSb/InAsSbP double heterostructure with drive-current tuning range of 10 cm(-1)
Authors: Civis, S Imenkov, AN Danilova, AP Kolchanova, NM Sherstnev, VV Yakovlev, YP Walters, AD
Citation: S. Civis et al., A tunable single-mode 3.2 mu m laser based on an InAsSb/InAsSbP double heterostructure with drive-current tuning range of 10 cm(-1), SPECT ACT A, 56(11), 2000, pp. 2125-2130
Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane
Authors: Astakhova, AP Danilova, TN Imenkov, AN Kolchanova, NM Sherstnev, VV Yakovlev, YP
Citation: Ap. Astakhova et al., Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane, SEMICONDUCT, 34(9), 2000, pp. 1100-1102
Magnetotransport in a semimetal channel in p-Ga1-xInxAsySb1-y/p-InAs heterostructures with various compositions of the solid solution
Authors: Voronina, TI Lagunova, TS Mikhailova, MP Moiseev, KD Rozov, AE Yakovlev, YP
Citation: Ti. Voronina et al., Magnetotransport in a semimetal channel in p-Ga1-xInxAsySb1-y/p-InAs heterostructures with various compositions of the solid solution, SEMICONDUCT, 34(2), 2000, pp. 189-194
Single-mode InAsSb/InAsSbP laser (lambda approximate to 3.2 mu m) tunable over 100 angstrom
Authors: Danilova, AP Imenkov, AN Kolchanova, NM Civis, S Sherstnev, VV Yakovlev, YP
Citation: Ap. Danilova et al., Single-mode InAsSb/InAsSbP laser (lambda approximate to 3.2 mu m) tunable over 100 angstrom, SEMICONDUCT, 34(2), 2000, pp. 237-242
Photoluminescence of Ga1-xInxAsySb1-y solid solutions lattice-matched to InAs
Authors: Moiseev, KD Toropov, AA Terent'ev, YV Mikhailova, MP Yakovlev, YP
Citation: Kd. Moiseev et al., Photoluminescence of Ga1-xInxAsySb1-y solid solutions lattice-matched to InAs, SEMICONDUCT, 34(12), 2000, pp. 1376-1380
Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface
Authors: Moiseev, KD Sitnikova, AA Faleev, NN Yakovlev, YP
Citation: Kd. Moiseev et al., Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface, SEMICONDUCT, 34(12), 2000, pp. 1381-1385
Long-wavelength light-emitting diodes (lambda=3.4-3.9 mu m) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy
Authors: Zotova, NV Kizhaev, SS Molchanov, SS Popova, TB Yakovlev, YP
Citation: Nv. Zotova et al., Long-wavelength light-emitting diodes (lambda=3.4-3.9 mu m) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy, SEMICONDUCT, 34(12), 2000, pp. 1402-1405
Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers
Authors: Imenkov, AN Kolchanova, NM Kubat, P Civish, S Yakovlev, YP
Citation: An. Imenkov et al., Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers, SEMICONDUCT, 34(12), 2000, pp. 1406-1409
Risultati: 1-25 | 26-47