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Results: 1-25/31
Authors:
Goo, JS
Choi, CH
Abramo, A
Ahn, JG
Yu, ZP
Lee, TH
Dutton, RW
Citation: Js. Goo et al., Physical origin of the excess thermal noise in short channel MOSFETs, IEEE ELEC D, 22(2), 2001, pp. 101-103
Authors:
Gao, W
Zhou, AP
Wang, RF
Yu, ZP
Huang, MR
Yang, JP
Citation: W. Gao et al., Percutaneous balloon aortic valvuloplasty in the treatment of congenital valvular aortic stenosis in children, CHIN MED J, 114(5), 2001, pp. 453-455
Authors:
Li, F
Zhou, AQ
Gao, W
Wang, RF
Yu, ZP
Huang, MR
Yang, JP
Citation: F. Li et al., Percutaneous balloon angioplasty of coarctation of the aorta in children: 12-year follow-up results, CHIN MED J, 114(5), 2001, pp. 459-461
Authors:
Ma, YT
Liu, LT
Tian, LL
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects, IEEE COMP A, 20(4), 2001, pp. 495-502
Authors:
Ma, YT
Li, ZJ
Liu, LT
Yu, ZP
Citation: Yt. Ma et al., Comprehensive analytical physical model of quantized inversion layer in MOS structure, SOL ST ELEC, 45(2), 2001, pp. 267-273
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Characterization and modelling of carrier distribution and gate capacitance in MOS structure inversion layer, INT J ELECT, 88(4), 2001, pp. 395-409
Authors:
Wang, GF
Qi, XN
Yu, ZP
Dutton, RW
Citation: Gf. Wang et al., Device level modeling of metal-insulator-semiconductor interconnects, IEEE DEVICE, 48(8), 2001, pp. 1672-1682
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Scale transformation method in self-consistent solution of Schrodinger andPoisson equations, JPN J A P 1, 39(8), 2000, pp. 4759-4760
Authors:
Qi, XN
Yue, CP
Arnborg, T
Soh, HT
Sakai, H
Yu, ZP
Dutton, RW
Citation: Xn. Qi et al., A fast 3-D modeling approach to electrical parameters extraction of bonding wires for RF circuits, IEEE T AD P, 23(3), 2000, pp. 480-488
Authors:
Zhang, GW
Yu, ZP
Dong, YP
Yao, AP
Citation: Gw. Zhang et al., On Precambrian framework and evolution of the Qinling belt., ACTA PETR S, 16(1), 2000, pp. 11-21
Authors:
He, JT
Nie, AH
He, MY
He, XR
Yu, ZP
Ye, XL
Xing, QY
Citation: Jt. He et al., Mass spectrometric study of six cyclic esters, RAP C MASS, 14(9), 2000, pp. 765-771
Authors:
He, JT
Nie, AH
He, MY
He, XR
Yu, ZP
Ye, XL
Xing, QY
Citation: Jt. He et al., Electron impact fragmentation mechanisms of some cyclic esters with helical structures, RAP C MASS, 14(24), 2000, pp. 2357-2361
Authors:
Choi, CH
Yu, ZP
Dutton, RW
Citation: Ch. Choi et al., Modeling of MOS scaling with emphasis on gate tunneling and source/drain resistance, SUPERLATT M, 27(2-3), 2000, pp. 191-206
Authors:
Troyanovsky, B
Yu, ZP
Dutton, RW
Citation: B. Troyanovsky et al., Physics-based simulation of nonlinear distortion in semiconductor devices using the harmonic balance method, COMPUT METH, 181(4), 2000, pp. 467-482
Authors:
Yu, ZP
Matsuoka, M
Wispriyono, B
Iryo, Y
Igisu, H
Citation: Zp. Yu et al., Activation of mitogen-activated protein kinases by tributyltin in CCRF-CEMcells: Role of intracellular Ca2+, TOX APPL PH, 168(3), 2000, pp. 200-207
Authors:
Ma, YT
Liu, LT
Deng, W
Tian, LL
Li, ZJ
Yu, ZP
Citation: Yt. Ma et al., A new charge model including quantum mechanical effects in MOS structure inversion layer, SOL ST ELEC, 44(9), 2000, pp. 1697-1702
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET, SOL ST ELEC, 44(7), 2000, pp. 1335-1339
Authors:
Ma, YT
Li, ZJ
Liu, LT
Tian, LL
Yu, ZP
Citation: Yt. Ma et al., Effective density-of-states approach to QM correction in MOS structures, SOL ST ELEC, 44(3), 2000, pp. 401-407
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., On the degeneracy of quantized inversion layer in MOS structures, SOL ST ELEC, 44(11), 2000, pp. 1925-1929
Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region, MICROELEC J, 31(11-12), 2000, pp. 913-921
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer, IEEE DEVICE, 47(9), 2000, pp. 1764-1767
Authors:
Ma, YT
Liu, LT
Yu, ZP
Li, ZJ
Citation: Yt. Ma et al., Simplified method to investigate quantum mechanical effects in MOS structure inversion layer, IEEE DEVICE, 47(6), 2000, pp. 1303-1305
Authors:
Choi, CH
Goo, JS
Yu, ZP
Dutton, RW
Citation: Ch. Choi et al., Shallow source/drain extension effects on external resistance in sub-0.1 mu m MOSFET's, IEEE DEVICE, 47(3), 2000, pp. 655-658
Authors:
Goo, JS
Choi, CH
Danneville, F
Morifuji, E
Momose, HS
Yu, ZP
Iwai, H
Lee, TH
Dutton, RW
Citation: Js. Goo et al., An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs, IEEE DEVICE, 47(12), 2000, pp. 2410-2419
Authors:
Yu, ZP
Dutton, RW
Kiehl, RA
Citation: Zp. Yu et al., Circuit/device modeling at the quantum level, IEEE DEVICE, 47(10), 2000, pp. 1819-1825