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Results: 1-25/35
Authors:
BOVOLON N
SCHULTHEIS R
MULLER JE
ZWICKNAGL P
ZANONI E
Citation: N. Bovolon et al., A SHORT-TERM HIGH-CURRENT-DENSITY RELIABILITY INVESTIGATION OF ALGAASGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 19(12), 1998, pp. 469-471
Authors:
DICARLO A
LUGLI P
CANALI C
MALIK R
MANFREDI M
NEVIANI A
ZANONI E
ZANDLER G
Citation: A. Dicarlo et al., A COMBINED MONTE-CARLO AND EXPERIMENTAL-ANALYSIS OF LIGHT-EMISSION PHENOMENA IN ALGAAS GAAS HBTS/, Semiconductor science and technology, 13(8), 1998, pp. 858-863
Authors:
MENEGNESSO G
CROSATO C
GARAT F
MARTINES G
PACCAGNELLA A
ZANONI E
Citation: G. Menegnesso et al., FAILURE MECHANISMS OF SCHOTTKY GATE CONTACT DEGRADATION AND DEEP TRAPS CREATION IN ALGAAS INGAAS PM-HEMTS SUBMITTED TO ACCELERATED LIFE TESTS/, Microelectronics and reliability, 38(6-8), 1998, pp. 1227-1232
Authors:
MENEGHESSO G
MAGISTRALI F
SALA D
VANZI M
CANALI C
ZANONI E
Citation: G. Meneghesso et al., FAILURE MECHANISMS DUE TO METALLURGICAL INTERACTIONS IN COMMERCIALLY AVAILABLE ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/, Microelectronics and reliability, 38(4), 1998, pp. 497-506
Authors:
PACCAGNELLA A
ZANONI E
Citation: A. Paccagnella et E. Zanoni, UNTITLED, Microelectronics and reliability, 38(2), 1998, pp. 3-4
Authors:
HURT MJ
MENEGHESSO G
ZANONI E
PEATMAN WCB
TSAI R
SHUR MS
Citation: Mj. Hurt et al., BREAKDOWN BEHAVIOR OF LOW-POWER PSEUDOMORPHIC ALGAAS INGAAS 2-D MESFETS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1843-1845
Authors:
BOVOLON N
BAUREIS P
MULLER JE
ZWICKNAGL P
SCHULTHEIS R
ZANONI E
Citation: N. Bovolon et al., A SIMPLE METHOD FOR THE THERMAL-RESISTANCE MEASUREMENT OF ALGAAS GAASHETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1846-1848
Authors:
NEVIANI A
MENEGHESSO G
ZANONI E
HAFIZI M
CANALI C
Citation: A. Neviani et al., POSITIVE TEMPERATURE-DEPENDENCE OF THE ELECTRON-IMPACT IONIZATION COEFFICIENT IN IN0.53GA0.47AS INP HBTS/, IEEE electron device letters, 18(12), 1997, pp. 619-621
Authors:
SCARPA A
PACCAGNELLA A
GHIDINI G
VIANELLO A
ZANONI E
Citation: A. Scarpa et al., INSTABILITY OF POST-FOWLER-NORDHEIM STRESS MEASUREMENTS OF MOS DEVICES, Solid-state electronics, 41(7), 1997, pp. 935-938
Authors:
MENEGHESSO G
DEBORTOLI E
SALA D
ZANONI E
Citation: G. Meneghesso et al., FAILURE MECHANISMS OF ALGAAS INGAAS PSEUDOMORPHIC HEMTS - EFFECTS DUETO HOT-ELECTRONS AND MODULATION OF TRAPPED CHARGE/, Microelectronics and reliability, 37(7), 1997, pp. 1121-1129
Authors:
PAVAN P
PELLESI A
MENEGHESSO G
ZANONI E
Citation: P. Pavan et al., EFFECTS OF ESD PROTECTIONS ON LATCH-UP SENSITIVITY OF CMOS 4-STRIPE STRUCTURES, Microelectronics and reliability, 37(10-11), 1997, pp. 1561-1564
Authors:
MENEGHESSO G
COGLIATI B
DONZELLI G
SALA D
ZANONI E
Citation: G. Meneghesso et al., DEVELOPMENT OF KINK IN THE OUTPUT I-V CHARACTERISTICS OF PSEUDOMORPHIC HEMTS AFTER HOT-ELECTRON ACCELERATED TESTING, Microelectronics and reliability, 37(10-11), 1997, pp. 1679-1682
Authors:
MENEGHESSO G
MION A
HADDAB Y
PAVESI M
MANFREDI M
CANALI C
ZANONI E
Citation: G. Meneghesso et al., HOT-CARRIER EFFECTS IN ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS - FAILURE MECHANISMS INDUCED BY HOT-CARRIER TESTING/, Journal of applied physics, 82(11), 1997, pp. 5547-5554
Authors:
NEVIANI A
PAVAN P
NARDI A
CHANTRE A
VENDRAME L
ZANONI E
Citation: A. Neviani et al., HOT-CARRIER DEGRADATION AND OXIDE CHARGE BUILDUP IN SELF-ALIGNED ETCHED-POLYSILICON NPN BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2059-2063
Authors:
PAVAN P
BEZ R
OLIVO P
ZANONI E
Citation: P. Pavan et al., FLASH MEMORY CELLS - AN OVERVIEW, Proceedings of the IEEE, 85(8), 1997, pp. 1248-1271
Authors:
VERZELLESI G
DALFABBRO A
PAVAN P
VENDRAME L
ZABOTTO E
ZANINI A
CHANTRE A
ZANONI E
Citation: G. Verzellesi et al., SPICE MODELING OF IMPACT IONIZATION EFFECTS IN SILICON BIPOLAR-TRANSISTORS, IEE proceedings. Circuits, devices and systems, 143(1), 1996, pp. 33-40
Authors:
MENEGHESSO G
CANALI C
COVA P
DEBORTOLI E
ZANONI E
Citation: G. Meneghesso et al., TRAPPED CHARGE MODULATION - A NEW CAUSE OF INSTABILITY IN ALGAAS INGAAS PSEUDOMORPHIC HEMTS/, IEEE electron device letters, 17(5), 1996, pp. 232-234
Authors:
PACCAGNELLA A
RIZZATO A
SCARPA A
ZANONI E
CRISENZA G
GHIDINI G
Citation: A. Paccagnella et al., ELECTRICAL AND RADIATION TESTS OF THIN TUNNEL OXIDES, Microelectronics and reliability, 36(7-8), 1996, pp. 1033-1044
Authors:
MENEGHESSO G
HADDAB Y
PERRINO N
CANALI C
ZANONI E
Citation: G. Meneghesso et al., DRAIN CURRENT DLTS ANALYSIS OF RECOVERABLE AND PERMANENT DEGRADATION EFFECTS IN ALGAAS GAAS AND ALGAAS/INGAAS HEMTS/, Microelectronics and reliability, 36(11-12), 1996, pp. 1895-1898
Authors:
CANALI C
PAVAN P
DICARLO A
LUGLI P
MALIK R
MANFREDI M
NEVIANI A
VENDRAME L
ZANONI E
ZANDLER G
Citation: C. Canali et al., EXPERIMENTAL AND MONTE-CARLO ANALYSIS OF IMPACT-IONIZATION IN ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1769-1777
Authors:
MENEGHESSO G
PACCAGNELLA A
HADDAB Y
CANALI C
ZANONI E
Citation: G. Meneghesso et al., EVIDENCE OF INTERFACE-TRAP CREATION BY HOT-ELECTRONS IN ALGAAS GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(10), 1996, pp. 1411-1413
Authors:
MENEGHESSO G
DEBORTOLI E
PACCAGNELLA A
ZANONI E
CANALI C
Citation: G. Meneghesso et al., RECOVERY OF LOW-TEMPERATURE ELECTRON TRAPPING IN ALGAAS INGAAS PM-HEMTS DUE TO IMPACT-IONIZATION/, IEEE electron device letters, 16(7), 1995, pp. 336-338
Authors:
VENDRAME L
ZABOTTO E
DALFABBRO A
ZANINI A
VERZELLESI G
ZANONI E
CHANTRE A
PAVAN P
Citation: L. Vendrame et al., INFLUENCE OF IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL ON BIPOLAR-TRANSISTOR PARAMETERS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1636-1646
Authors:
BERTHOLD G
ZANONI E
CANALI C
PAVESI M
PECCHINI M
MANFREDI M
BAHL SR
DELALAMO JA
Citation: G. Berthold et al., IMPACT IONIZATION AND LIGHT-EMISSION IN INALAS INGAAS HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS/, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 752-759
Authors:
CANALI C
FORZAN C
NEVIANI A
VENDRAME L
ZANONI E
HAMM RA
MALIK RJ
CAPASSO F
CHANDRASEKHAR S
Citation: C. Canali et al., MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN INGAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 66(9), 1995, pp. 1095-1097