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Results:
1-22
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Results: 22
Authors:
ZEGRYA GG
GUNKO NA
Citation: Gg. Zegrya et Na. Gunko, THEORETICAL-STUDY OF THE THRESHOLD CHARACTERISTICS OF INGAN MULTIQUANTUM-WELL LASERS, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 749-753
Authors:
ZEGRYA GG
PERLIN VE
Citation: Gg. Zegrya et Ve. Perlin, INTRABAND ABSORPTION OF LIGHT IN QUANTUM-WELLS INDUCED BY ELECTRON-ELECTRON COLLISIONS, Semiconductors, 32(4), 1998, pp. 417-422
Authors:
ZEGRYA GG
POLKOVNIKOV AS
Citation: Gg. Zegrya et As. Polkovnikov, MECHANISMS OF AUGER RECOMBINATION IN QUANTUM-WELLS, Journal of experimental and theoretical physics, 86(4), 1998, pp. 815-832
Authors:
POLKOVNIKOV AS
ZEGRYA GG
Citation: As. Polkovnikov et Gg. Zegrya, AUGER RECOMBINATION IN SEMICONDUCTOR QUANTUM-WELLS, Physical review. B, Condensed matter, 58(7), 1998, pp. 4039-4056
Authors:
GUNKO NA
KHALFIN VB
SOKOLOVA ZN
ZEGRYA GG
Citation: Na. Gunko et al., OPTICAL LOSS IN INAS-BASED LONG-WAVELENGTH LASERS, Journal of applied physics, 84(1), 1998, pp. 547-554
Authors:
VOROBEV LE
DONETSKII DV
FIRSOV DA
BONDARENKO EB
ZEGRYA GG
TOWE E
Citation: Le. Vorobev et al., TERAHERTZ EMISSION FROM SQUARE WELLS IN A LONGITUDINAL ELECTRIC-FIELD, JETP letters, 67(7), 1998, pp. 533-538
Authors:
ANDREEV AD
ZEGRYA GG
Citation: Ad. Andreev et Gg. Zegrya, AUGER RECOMBINATION IN STRAINED-QUANTUM-WELL INALASSB GASB STRUCTURESFOR 3-4-MU-M LASERS/, IEE proceedings. Optoelectronics, 144(5), 1997, pp. 336-342
Authors:
BAZHENOV NL
ZEGRYA GG
MIKHAILOVA MP
MOISEEV KD
SMIRNOV VA
SOLOVEVA OY
YAKOVLEV YP
Citation: Nl. Bazhenov et al., RADIATIVE RECOMBINATION ON THE INTERFACE IN A P-GAINASSB P-INAS TYPE-II (BROKEN-GAP) HETEROSTRUCTURE UPON PULSED EXCITATION/, Semiconductors, 31(6), 1997, pp. 560-562
Authors:
ANDREEV AD
ZEGRYA GG
Citation: Ad. Andreev et Gg. Zegrya, AUGER RECOMBINATION IN STRAINED QUANTUM-WELLS, Semiconductors, 31(3), 1997, pp. 297-303
Authors:
GUNKO NA
ZEGRYA GG
ZOTOVA NV
SOKOLOVA ZN
STUS NM
KHALFIN VB
Citation: Na. Gunko et al., INFLUENCE OF VALENCE-BAND ABSORPTION ON THE THRESHOLD CHARACTERISTICSOF LONG-WAVELENGTH INAS LASERS, Semiconductors, 31(11), 1997, pp. 1204-1211
Authors:
BAZHENOV NL
ZEGRYA GG
IVANOVOMSKII VI
MIKHAILOVA MP
MIKHAILOV MY
MOISEEV KD
SMIRNOV VA
YAKOVLEV YP
Citation: Nl. Bazhenov et al., ELECTROLUMINESCENCE OF THE UNCONFINED HETEROSTRUCTURE P-GAINASSB P-INAS AT LIQUID-HELIUM TEMPERATURES/, Semiconductors, 31(10), 1997, pp. 1046-1048
Authors:
ANDREEV AD
ZEGRYA GG
Citation: Ad. Andreev et Gg. Zegrya, THEORETICAL-STUDY OF THRESHOLDLESS AUGER RECOMBINATION IN COMPRESSIVELY STRAINED INALASSB GASB QUANTUM-WELLS/, Applied physics letters, 70(5), 1997, pp. 601-603
Authors:
ZEGRYA GG
ANDREEV AD
Citation: Gg. Zegrya et Ad. Andreev, THEORY OF NONEQUILIBRIUM CARRIER RECOMBIN ATION IN TYPE-II HETEROSTRUCTURES, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 109(2), 1996, pp. 615-638
Authors:
MIKHAILOVA MP
ZEGRYA GG
MOISEEV KD
YAKOVLEV YP
Citation: Mp. Mikhailova et al., INTERFACE ELECTROLUMINESCENCE OF CONFINED CARRIERS IN TYPE-II BROKEN-GAP P-GAINASSB P-INAS SINGLE-HETEROJUNCTION/, Solid-state electronics, 40(1-8), 1996, pp. 673-677
Authors:
DANILOVA TN
ERSHOV OG
ZEGRYA GG
IMENKOV AN
STEPANOV MV
SHERSTNEV VV
YAKOVLEV YP
Citation: Tn. Danilova et al., POLARIZATION OF THE EMISSION FROM DOUBLE-HETEROSTRUCTURE LASERS BASEDON INASSB INASSBP/, Semiconductors, 29(9), 1995, pp. 834-837
Authors:
MIKHAILOVA MP
ZEGRYA GG
MOISEEV KD
TIMCHENKO IN
YAKOVLEV YP
Citation: Mp. Mikhailova et al., OBSERVATION OF AN ELECTROLUMINESCENCE OF CONFINED CARRIERS AT SINGLE P-GALNASSB P-INAS TYPE-II BROKEN-GAP HETEROJUNCTIONS/, Semiconductors, 29(4), 1995, pp. 357-361
Authors:
ZEGRYA GG
GUNKO NA
FROLUSHKINA EV
IMENKOV AN
YAKOVLEV YP
Citation: Gg. Zegrya et al., CHARACTERISTIC FEATURES OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF GAINASSB DOUBLE-HETEROSTRUCTURE LASERS WITH A THIN ACTIVE-REGION, Semiconductors, 29(12), 1995, pp. 1157-1161
Authors:
ZEGRYA GG
MASTEROV VF
Citation: Gg. Zegrya et Vf. Masterov, MECHANISM OF THE INTENSIFICATION OF F-F LUMINESCENCE IN SEMICONDUCTORS, Semiconductors, 29(10), 1995, pp. 989-995
Authors:
ANDREEV AD
ZEGRYA GG
Citation: Ad. Andreev et Gg. Zegrya, MECHANISM FOR A SUPPRESSION OF AUGER RECOMBINATION IN TYPE-II HETEROSTRUCTURES, JETP letters, 61(9), 1995, pp. 764-770
Authors:
ZEGRYA GG
ANDREEV AD
Citation: Gg. Zegrya et Ad. Andreev, MECHANISM OF SUPPRESSION OF AUGER RECOMBINATION PROCESSES IN TYPE-II HETEROSTRUCTURES, Applied physics letters, 67(18), 1995, pp. 2681-2683
Authors:
ANDREEV AD
ZEGRYA GG
Citation: Ad. Andreev et Gg. Zegrya, THRESHOLD-FREE MECHANISM OF AUGER-RECOMBI NATION IN SEMICONDUCTORS INQUANTIZED MAGNETIC-FIELD, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 105(4), 1994, pp. 1005-1016
Authors:
SURIS RA
ZEGRYA GG
Citation: Ra. Suris et Gg. Zegrya, RESONANT HOLE TUNNELING THROUGH A SINGLE HETEROBARRIER IN SEMICONDUCTOR HETEROSTRUCTURES, Semiconductor science and technology, 7(3), 1992, pp. 347-351
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