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Results: 1-17 |
Results: 17
KINETICS OF ION DEPOLARIZATION OF SI-MOS STRUCTURES IN THE LINEAR VOLTAGE SWEEP REGIME
Authors: ZHDAN AG GOLDMAN EI CHUCHEVA GV
Citation: Ag. Zhdan et al., KINETICS OF ION DEPOLARIZATION OF SI-MOS STRUCTURES IN THE LINEAR VOLTAGE SWEEP REGIME, Semiconductors, 31(12), 1997, pp. 1268-1272
DETERMINATION OF THE COEFFICIENTS OF ION TRANSFER IN INSULATING LAYERS ON THE SURFACE OF SEMICONDUCTORS USING DYNAMIC CURRENT-VOLTAGE DEPOLARIZATION CHARACTERISTICS
Authors: GOLDMAN EI ZHDAN AG CHUCHEVA GV
Citation: Ei. Goldman et al., DETERMINATION OF THE COEFFICIENTS OF ION TRANSFER IN INSULATING LAYERS ON THE SURFACE OF SEMICONDUCTORS USING DYNAMIC CURRENT-VOLTAGE DEPOLARIZATION CHARACTERISTICS, Instruments and experimental techniques, 40(6), 1997, pp. 841-846
GENERATION OF ELECTRON-HOLE PAIRS AT THE SURFACE OF A SEMICONDUCTOR IN THE FRINGING FIELDS OF MACROSCOPIC CHARGED CLUSTERS - EFFECTS OF ELECTRICAL INHOMOGENEITIES OF VARIOUS LENGTH SCALES
Authors: GOLDMAN EI ZHDAN AG
Citation: Ei. Goldman et Ag. Zhdan, GENERATION OF ELECTRON-HOLE PAIRS AT THE SURFACE OF A SEMICONDUCTOR IN THE FRINGING FIELDS OF MACROSCOPIC CHARGED CLUSTERS - EFFECTS OF ELECTRICAL INHOMOGENEITIES OF VARIOUS LENGTH SCALES, Semiconductors, 29(3), 1995, pp. 219-224
DYNAMICS OF THE THERMAL GENERATION OF FREE CHARGE-CARRIERS AT A SEMICONDUCTOR-INSULATOR INTERFACE UNDER THE CONDITIONS OF RELAXATION OF THEPOPULATION OF VOLUME GENERATION CENTERS
Authors: DMITRIEV SG ZHDAN AG KUKHARSKAYA NF MARKIN YV
Citation: Sg. Dmitriev et al., DYNAMICS OF THE THERMAL GENERATION OF FREE CHARGE-CARRIERS AT A SEMICONDUCTOR-INSULATOR INTERFACE UNDER THE CONDITIONS OF RELAXATION OF THEPOPULATION OF VOLUME GENERATION CENTERS, Semiconductors, 29(10), 1995, pp. 996-1000
EFFECTS STEMMING FROM RELAXATION OF THE SPACE-CHARGE REGION IN THE SEMICONDUCTOR DURING THERMALLY STIMULATED DEPOLARIZATION OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE
Authors: ZHDAN AG MARKIN YV
Citation: Ag. Zhdan et Yv. Markin, EFFECTS STEMMING FROM RELAXATION OF THE SPACE-CHARGE REGION IN THE SEMICONDUCTOR DURING THERMALLY STIMULATED DEPOLARIZATION OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE, Semiconductors, 28(5), 1994, pp. 444-449
RESERVOIR EFFECT IN THE THERMAL DELOCALIZATION OF CARRIERS NEAR A SILICON-OXIDE INTERFACE
Authors: GOLDMAN EI ZHDAN AG PONOMAREV AN
Citation: Ei. Goldman et al., RESERVOIR EFFECT IN THE THERMAL DELOCALIZATION OF CARRIERS NEAR A SILICON-OXIDE INTERFACE, Semiconductors, 28(11), 1994, pp. 1073-1079
EVOLUTION OF AN IMPURITY BAND DURING LOW-TEMPERATURE APPLICATION OF AFIELD TO WEAKLY COMPENSATED SILICON WITH A HIGH DOPING LEVEL
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A
Citation: As. Vedeneev et al., EVOLUTION OF AN IMPURITY BAND DURING LOW-TEMPERATURE APPLICATION OF AFIELD TO WEAKLY COMPENSATED SILICON WITH A HIGH DOPING LEVEL, JETP letters, 60(6), 1994, pp. 475-480
VERY SENSITIVE FACILITY FOR PRECISION-MEASUREMENTS OF MAGNETORESISTANCE AND THE HALL-EFFECT IN SEMICONDUCTOR STRUCTURES
Authors: VEDENEEV AS ZHDAN AG PONOMAREV AN SIZOV VE
Citation: As. Vedeneev et al., VERY SENSITIVE FACILITY FOR PRECISION-MEASUREMENTS OF MAGNETORESISTANCE AND THE HALL-EFFECT IN SEMICONDUCTOR STRUCTURES, Instruments and experimental techniques, 37(4), 1994, pp. 479-484
VERSATILE RELAXATION SPECTROSCOPY TECHNIQUE FOR SOLID INTERFACES
Authors: ZHDAN AG KLOCHKOVA AM MARKIN YV
Citation: Ag. Zhdan et al., VERSATILE RELAXATION SPECTROSCOPY TECHNIQUE FOR SOLID INTERFACES, Instruments and experimental techniques, 37(4), 1994, pp. 485-488
LOW-TEMPERATURE CELL FOR STUDIES OF IMPURITY PHOTOCONDUCTIVITY IN A SEMICONDUCTOR UNDER A SUBNANOWATT RADIATION FLUX
Authors: ZHDAN AG KOZLOV AM KLEMIN SN RYLKOV VV
Citation: Ag. Zhdan et al., LOW-TEMPERATURE CELL FOR STUDIES OF IMPURITY PHOTOCONDUCTIVITY IN A SEMICONDUCTOR UNDER A SUBNANOWATT RADIATION FLUX, Instruments and experimental techniques, 37(2), 1994, pp. 252-255
FIELD-EFFECT IN WEAKLY COMPENSATED SI UNDER CONDITION OF IMPURITY CONDUCTION
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A
Citation: As. Vedeneev et al., FIELD-EFFECT IN WEAKLY COMPENSATED SI UNDER CONDITION OF IMPURITY CONDUCTION, Applied physics letters, 64(19), 1994, pp. 2566-2568
IDENTIFICATION OF MULTIPLY-CHARGED BULK LEVELS BY RELAXATION SPECTROSCOPY OF A SEMICONDUCTOR-INSULATOR INTERFACE
Authors: DMITRIEV SG ZHDAN AG MARKIN YV
Citation: Sg. Dmitriev et al., IDENTIFICATION OF MULTIPLY-CHARGED BULK LEVELS BY RELAXATION SPECTROSCOPY OF A SEMICONDUCTOR-INSULATOR INTERFACE, Semiconductors, 27(8), 1993, pp. 691-695
RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES
Authors: ZHDAN AG LIFSHITS TM RYLKOV VV SHAFRAN AG
Citation: Ag. Zhdan et al., RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES, Semiconductors, 27(5), 1993, pp. 465-467
ENERGY-DEPENDENCE OF THE CARRIER CAPTURE COEFFICIENT FOR NEUTRAL SHALLOW IMPURITIES IN SEMICONDUCTORS
Authors: DMITRIEV SG ZHDAN AG KOZLOV AM LIFSHITS TM RYLKOV VV SHAGIMURATOV OG
Citation: Sg. Dmitriev et al., ENERGY-DEPENDENCE OF THE CARRIER CAPTURE COEFFICIENT FOR NEUTRAL SHALLOW IMPURITIES IN SEMICONDUCTORS, Semiconductor science and technology, 8(4), 1993, pp. 544-548
ELECTRON LOCALIZATION DURING NONLINEAR SCREENING OF THE SMALL-SCALE FLUCTUATION POTENTIAL OF A GAAS-ALGAAS HETEROJUNCTION
Authors: VEDENEEV AS ZHDAN AG SIZOV VE GERGEL VA
Citation: As. Vedeneev et al., ELECTRON LOCALIZATION DURING NONLINEAR SCREENING OF THE SMALL-SCALE FLUCTUATION POTENTIAL OF A GAAS-ALGAAS HETEROJUNCTION, JETP letters, 58(5), 1993, pp. 375-379
FRANZ-KELDYSH EFFECT IN THE ELECTRIC-FIELDS OF MACROSCOPIC IRREGULARITIES AT A SEMICONDUCTOR SURFACE
Authors: GOLDMAN EI ZHDAN AG SUMAROKA AM
Citation: Ei. Goldman et al., FRANZ-KELDYSH EFFECT IN THE ELECTRIC-FIELDS OF MACROSCOPIC IRREGULARITIES AT A SEMICONDUCTOR SURFACE, JETP letters, 57(12), 1993, pp. 797-801
CONCENTRATION-INDUCED TRANSITION TO A CONDUCTIVITY WITH A CONSTANT HOPPING LENGTH INVOLVING STATES NEAR THE FERMI-LEVEL IN A FIELD-EFFECT IN SLIGHTLY COMPENSATED SI-B
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG MODELLI A RYLKOV VV TKACH YY
Citation: As. Vedeneev et al., CONCENTRATION-INDUCED TRANSITION TO A CONDUCTIVITY WITH A CONSTANT HOPPING LENGTH INVOLVING STATES NEAR THE FERMI-LEVEL IN A FIELD-EFFECT IN SLIGHTLY COMPENSATED SI-B, JETP letters, 57(10), 1993, pp. 662-666
Risultati: 1-17 |