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Results: 1-25 | 26-31
Results: 1-25/31
BEHAVIOR OF EPITAXIAL GAAS-LAYERS AS ALPHA-PARTICLE DETECTORS
Authors: BOTNARYUK VM ZHILYAEV YV IVANOV AM STROKAN NB FEDOROV LM
Citation: Vm. Botnaryuk et al., BEHAVIOR OF EPITAXIAL GAAS-LAYERS AS ALPHA-PARTICLE DETECTORS, Technical physics letters, 24(4), 1998, pp. 250-253
SULFIDE PASSIVATION OF III-V SEMICONDUCTOR SURFACES - ROLE OF THE SULFUR IONIC CHARGE AND OF THE REACTION POTENTIAL OF THE SOLUTION
Authors: BESSOLOV VN ZHILYAEV YV KONENKOVA EV LEBEDEV MV
Citation: Vn. Bessolov et al., SULFIDE PASSIVATION OF III-V SEMICONDUCTOR SURFACES - ROLE OF THE SULFUR IONIC CHARGE AND OF THE REACTION POTENTIAL OF THE SOLUTION, Technical physics, 43(8), 1998, pp. 983-985
PHOTOELECTRIC PROPERTIES OF GAN GAP HETEROSTRUCTURES/
Authors: BOTNARYUK VM RAEVSKII SD BELKOV VV ZHILYAEV YV RUD YV FEDOROV LM RUD VY
Citation: Vm. Botnaryuk et al., PHOTOELECTRIC PROPERTIES OF GAN GAP HETEROSTRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1077-1079
PHONON-SPECTRUM OF WURTZITE GAN AND ALN EXPERIMENT AND THEORY
Authors: DAVYDOV VY KITAEV YE GONCHARUK IN TSAREGORODTSEV AM SMIRNOV AN LEBEDEV AO BOTNARYK VM ZHILYAEV YV SMIRNOV MB MIRGORODSKY AP SEMCHINOVA OK
Citation: Vy. Davydov et al., PHONON-SPECTRUM OF WURTZITE GAN AND ALN EXPERIMENT AND THEORY, Journal of crystal growth, 190, 1998, pp. 656-660
HYDRIDE VAPOR-PHASE EPITAXY OF GAN ON MOLECULAR-BEAM EPITAXIAL GAN SUBSTRATES
Authors: BELKOV VV BOTNARYUK VM FEDOROV LM GONCHARUK IN NOVIKOV SV ULIN VP ZHILYAEV YV CHENG TS JEFFS NJ FOXON CT KATSAVETS NI HARRISON I
Citation: Vv. Belkov et al., HYDRIDE VAPOR-PHASE EPITAXY OF GAN ON MOLECULAR-BEAM EPITAXIAL GAN SUBSTRATES, Journal of crystal growth, 187(1), 1998, pp. 29-34
TUNNEL EXCESS CURRENT IN NONDEGENERATE BARRIER (P-N AND M-S) SILICON-CONTAINING III-V STRUCTURES
Authors: EVSTROPOV VV ZHILYAEV YV DZHUMAEVA M NAZAROV N
Citation: Vv. Evstropov et al., TUNNEL EXCESS CURRENT IN NONDEGENERATE BARRIER (P-N AND M-S) SILICON-CONTAINING III-V STRUCTURES, Semiconductors, 31(2), 1997, pp. 115-120
EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SADOFEV YG TOPCHII AN FALEEV NN FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES, Semiconductors, 29(3), 1995, pp. 195-198
USE OF GAAS-INGAAS SELECTIVE HETEROSTRUCT URES FOR THE CREATION OF IR-PHOTODETECTORS
Authors: ZHILYAEV YV KANSKAYA LM KRIVOLAPCHUK VV KULIKOV AY MYNBAEVA MG
Citation: Yv. Zhilyaev et al., USE OF GAAS-INGAAS SELECTIVE HETEROSTRUCT URES FOR THE CREATION OF IR-PHOTODETECTORS, Pis'ma v Zurnal tehniceskoj fiziki, 21(21), 1995, pp. 23-28
PHOTOSENSITIVITY OF P-NGAAS-N-GAP N-SI HE TEROSTRUCTURES IN LINEARLY-POLARIZED EMISSION/
Authors: ZHILYAEV YV NAZAROV N RUD VY RUD YV TOPCHII AN
Citation: Yv. Zhilyaev et al., PHOTOSENSITIVITY OF P-NGAAS-N-GAP N-SI HE TEROSTRUCTURES IN LINEARLY-POLARIZED EMISSION/, Zurnal tehniceskoj fiziki, 65(1), 1995, pp. 91-98
PHOTOSENSITIVITY AND INDUCED PHOTOPLEOCHROISM OF AU-N-GAP P-SI 2-BARRIER STRUCTURES/
Authors: ZHILYAEV YV MELEBAEV D NAZAROV N RUD VY RUD YV
Citation: Yv. Zhilyaev et al., PHOTOSENSITIVITY AND INDUCED PHOTOPLEOCHROISM OF AU-N-GAP P-SI 2-BARRIER STRUCTURES/, Semiconductors, 28(2), 1994, pp. 126-128
PHOTOELECTRIC PROPERTIES OF SURFACE-BARRIER AU-N-GAP STRUCTURES ON SISUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV LIPKO AL MYNBAEVA MG NAZAROV N FEDOROV LM
Citation: Vv. Evstropov et al., PHOTOELECTRIC PROPERTIES OF SURFACE-BARRIER AU-N-GAP STRUCTURES ON SISUBSTRATES, Semiconductors, 28(2), 1994, pp. 213-214
PHOTOELECTRIC PROPERTIES OF P-GAAS N-GE STRUCTURES IN LINEARLY POLARIZED-LIGHT/
Authors: ZHILYAEV YV NAZAROV N RUD VY RUD YV FEDOROV LM
Citation: Yv. Zhilyaev et al., PHOTOELECTRIC PROPERTIES OF P-GAAS N-GE STRUCTURES IN LINEARLY POLARIZED-LIGHT/, Semiconductors, 28(10), 1994, pp. 1006-1008
INDUCED POLARIZATION PHOTOSENSITIVITY IN N-GAP P-SI HETEROJUNCTIONS/
Authors: BERKELIEV A ZHILYAEV YV NAZAROV N RUD VY RUD YV
Citation: A. Berkeliev et al., INDUCED POLARIZATION PHOTOSENSITIVITY IN N-GAP P-SI HETEROJUNCTIONS/, Semiconductors, 28(1), 1994, pp. 8-11
GAP FIELD TRANSISTORS WITH SCHOTTKY-BARRI ER FOR HIGH-TEMPERATURE INTEGRAL CIRCUITS
Authors: ZHILYAEV YV KECHEK AG LIFSHITS YA MARAKHONOV VM SIMIN GS FEDOROV LM CHEBUNINA IE
Citation: Yv. Zhilyaev et al., GAP FIELD TRANSISTORS WITH SCHOTTKY-BARRI ER FOR HIGH-TEMPERATURE INTEGRAL CIRCUITS, Pis'ma v Zurnal tehniceskoj fiziki, 20(14), 1994, pp. 8-12
HIGH-TEMPERATURE FIELD TRANSISTORS BASED ON GALLIUM-PHOSPHIDE
Authors: ZHILYAEV YV PANYUTIN EA FEDOROV LM
Citation: Yv. Zhilyaev et al., HIGH-TEMPERATURE FIELD TRANSISTORS BASED ON GALLIUM-PHOSPHIDE, Pis'ma v Zurnal tehniceskoj fiziki, 20(11), 1994, pp. 26-31
APPROACHES TO PROGNOSTICATION OF ANTIANGI NAL ACTIVITY OF CALCIUM-ANTAGONISTS IN MALES AND FEMALES AGED OVER 60
Authors: DZHANASHIYA PK ZHILYAEV YV GLAZUNOV AV NESTERENKO VI
Citation: Pk. Dzhanashiya et al., APPROACHES TO PROGNOSTICATION OF ANTIANGI NAL ACTIVITY OF CALCIUM-ANTAGONISTS IN MALES AND FEMALES AGED OVER 60, Terapevticeskij arhiv, 66(10), 1994, pp. 75-79
TEMPORAL ARTERITIS - ETIOLOGY AND TREATME NT
Authors: GEMBITSKY YV GLAZUNOV AV ZHILYAEV YV PROKHOROVA YG
Citation: Yv. Gembitsky et al., TEMPORAL ARTERITIS - ETIOLOGY AND TREATME NT, Kliniceskaa medicina, 72(6), 1994, pp. 18-21
APPROACHES TO INDIVIDUAL ANTIANGINAL THER APY - IS IT VALID TO CONSIDER NITROSORBIDE AS A DRUG OF CHOICE
Authors: ZHILYAEV YV GLAZUNOV AV KOROBA GS
Citation: Yv. Zhilyaev et al., APPROACHES TO INDIVIDUAL ANTIANGINAL THER APY - IS IT VALID TO CONSIDER NITROSORBIDE AS A DRUG OF CHOICE, Kliniceskaa medicina, 72(4), 1994, pp. 62-64
ELECTRICAL-PROPERTIES OF EPITAXIAL P-N GAP STRUCTURES DEPOSITED ON SI-SUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SERGEEV DV FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., ELECTRICAL-PROPERTIES OF EPITAXIAL P-N GAP STRUCTURES DEPOSITED ON SI-SUBSTRATES, Semiconductors, 27(8), 1993, pp. 729-732
ELECTROLUMINESCENCE OF EPITAXIAL GAP P-N STRUCTURES GROWN ON SI SUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SERGEEV DV FEDOROV LM
Citation: Vv. Evstropov et al., ELECTROLUMINESCENCE OF EPITAXIAL GAP P-N STRUCTURES GROWN ON SI SUBSTRATES, Semiconductors, 27(4), 1993, pp. 369-371
POLARIZATION PHOTOSENSITIVITY OF EPITAXIAL GAP STRUCTURES ON SI SUBSTRATES
Authors: ZHILYAEV YV NAZAROV N RUD VY RUD YV FEDOROV LM
Citation: Yv. Zhilyaev et al., POLARIZATION PHOTOSENSITIVITY OF EPITAXIAL GAP STRUCTURES ON SI SUBSTRATES, Semiconductors, 27(10), 1993, pp. 890-893
ENHANCEMENT OF THE INDUCED PHOTOPLEOCHROISM IN P-N-GAP P-SI STRUCTURES/
Authors: BERKELIEV A ZHILYAEV YV NAZAROV N RUD VY RUD YV FEDOROV LM
Citation: A. Berkeliev et al., ENHANCEMENT OF THE INDUCED PHOTOPLEOCHROISM IN P-N-GAP P-SI STRUCTURES/, Semiconductors, 27(10), 1993, pp. 897-900
HETEROEPITAXIAL GAAS P-N-STRUCTURES ON SI SUBSTRATES PREPARED BY GAS-PHASE EPITAXY IN THE OPEN CHLORIDE SYSTEM
Authors: ZHILYAEV YV LIPKO AL MYNBAEVA MG NAZAROV N FEDOROV LM
Citation: Yv. Zhilyaev et al., HETEROEPITAXIAL GAAS P-N-STRUCTURES ON SI SUBSTRATES PREPARED BY GAS-PHASE EPITAXY IN THE OPEN CHLORIDE SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 19(7), 1993, pp. 30-33
MICROPLASMAS IN EPITAXIAL GAP P-N-STRUCTU RES GROWN ON SI SUBSTRATES
Authors: ZHILYAEV YV KONDRATEV BS NAZAROV N TUTYGIN VS FEDOROV LM
Citation: Yv. Zhilyaev et al., MICROPLASMAS IN EPITAXIAL GAP P-N-STRUCTU RES GROWN ON SI SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 19(6), 1993, pp. 14-19
PHOTOSENSITIVITY OF GAP SI HETEROSTRUCTUR ES IN LINEAR-POLARIZED EMISSION/
Authors: ZHILYAEV YV NAZAROV N RUD YV
Citation: Yv. Zhilyaev et al., PHOTOSENSITIVITY OF GAP SI HETEROSTRUCTUR ES IN LINEAR-POLARIZED EMISSION/, Pis'ma v Zurnal tehniceskoj fiziki, 19(15), 1993, pp. 44-52
Risultati: 1-25 | 26-31