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Results: 1-19 |
Results: 19
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES
Authors: NIKISHIN SA TEMKIN H ANTIPOV VG GURIEV AI ZUBRILOV AS ELYUKHIN VA FALEEV NN KYUTT RN CHIN AK
Citation: Sa. Nikishin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES, Applied physics letters, 72(19), 1998, pp. 2361-2363
LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/
Authors: NIKISHIN SA ANTIPOV VG GURIEV AI ELYUKHIN VA FALEEV NN KUDRIAVTSEV YA LEBEDEV AB SHUBINA TV ZUBRILOV AS TEMKIN H
Citation: Sa. Nikishin et al., LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1289-1292
LUMINESCENCE PROPERTIES OF GALLIUM NITRIDE LAYERS GROWN ON SILICON-CARBIDE SUBSTRATES BY GAS-PHASE EPITAXY IN A CHLORIDE SYSTEM
Authors: ZUBRILOV AS MELNIK YV TSVETKOV DV BUGROV VE NIKOLAEV AE STEPANOV SI DMITRIEV VA
Citation: As. Zubrilov et al., LUMINESCENCE PROPERTIES OF GALLIUM NITRIDE LAYERS GROWN ON SILICON-CARBIDE SUBSTRATES BY GAS-PHASE EPITAXY IN A CHLORIDE SYSTEM, Semiconductors, 31(5), 1997, pp. 523-526
WAVE-GUIDE PROPERTIES OF GALLIUM, ALUMINUM, AND INDIUM NITRIDE HETEROSTRUCTURES
Authors: BUGROV VE ZUBRILOV AS
Citation: Ve. Bugrov et As. Zubrilov, WAVE-GUIDE PROPERTIES OF GALLIUM, ALUMINUM, AND INDIUM NITRIDE HETEROSTRUCTURES, Semiconductors, 31(1), 1997, pp. 51-54
EFFECT OF ION DOPING ON THE ELECTRICAL AND LUMINESCENT PROPERTIES OF 4H-SIC EPITAXIAL P-N-JUNCTIONS
Authors: KALININA EV KHOLUJANOV GF ZUBRILOV AS TSVETKOV DV VATNIK MP SOLOVIEV VA TRETJAKOV VD KONG H DMITRIEV VA
Citation: Ev. Kalinina et al., EFFECT OF ION DOPING ON THE ELECTRICAL AND LUMINESCENT PROPERTIES OF 4H-SIC EPITAXIAL P-N-JUNCTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 259-262
CAVITATION POCKETS IN THE FORM OF ONE-DIMENSIONAL AGGREGATE CHAINS
Authors: ZUBRILOV SP ZUBRILOV AS
Citation: Sp. Zubrilov et As. Zubrilov, CAVITATION POCKETS IN THE FORM OF ONE-DIMENSIONAL AGGREGATE CHAINS, Zurnal fiziceskoj himii, 71(7), 1997, pp. 1336-1338
OPTICAL CONFINEMENT AND THRESHOLD CURRENTS IN III-V NITRIDE HETEROSTRUCTURES - SIMULATION
Authors: BOUGROV VE ZUBRILOV AS
Citation: Ve. Bougrov et As. Zubrilov, OPTICAL CONFINEMENT AND THRESHOLD CURRENTS IN III-V NITRIDE HETEROSTRUCTURES - SIMULATION, Journal of applied physics, 81(7), 1997, pp. 2952-2956
EDGE LUMINESCENCE OF ALN-GAN SOLID-SOLUTIONS
Authors: ZUBRILOV AS TSVETKOV DV NIKOLAEV VI NIKITINA IP
Citation: As. Zubrilov et al., EDGE LUMINESCENCE OF ALN-GAN SOLID-SOLUTIONS, Semiconductors, 30(11), 1996, pp. 1069-1073
LUMINESCENCE OF EPITAXIAL-FILMS OF ALN-GA N SOLID-SOLUTIONS GROWN ON GALLIUM NITRIDE LAYERS
Authors: ZUBRILOV AS TSVETKOV DV NIKOLAEV VI NIKITINA IP
Citation: As. Zubrilov et al., LUMINESCENCE OF EPITAXIAL-FILMS OF ALN-GA N SOLID-SOLUTIONS GROWN ON GALLIUM NITRIDE LAYERS, Fizika tverdogo tela, 38(8), 1996, pp. 2372-2375
THE DYNAMICS AND STRUCTURE OF A CAVITATIO N REGION EXPERIENCING THE ACTION OF ULTRASOUND
Authors: GRIVNIN YA ZUBRILOV AS ZUBRILOV SP AFANASEV AV
Citation: Ya. Grivnin et al., THE DYNAMICS AND STRUCTURE OF A CAVITATIO N REGION EXPERIENCING THE ACTION OF ULTRASOUND, Zurnal fiziceskoj himii, 70(5), 1996, pp. 927-930
LOW-TEMPERATURE CHARACTERISTICS OF SOLAR-CELLS
Authors: GUK EG SHUMAN VB ZUBRILOV AS
Citation: Eg. Guk et al., LOW-TEMPERATURE CHARACTERISTICS OF SOLAR-CELLS, Semiconductors, 29(8), 1995, pp. 779-780
MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE
Authors: ANTIPOV VG ZUBRILOV AS MERKULOV AV NIKISHIN SA SITNIKOVA AA STEPANOV MV TROSHKOV SI ULIN VP FALEEV NN
Citation: Vg. Antipov et al., MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE, Semiconductors, 29(10), 1995, pp. 946-951
DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION
Authors: KUZNETSOV NI ZUBRILOV AS
Citation: Ni. Kuznetsov et As. Zubrilov, DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 181-184
AN ANALYSIS OF STABILITY OF THE SURFACE O F A CLOSED CAVITATION CAVITY
Authors: GRIVNIN YA ZUBRILOV AS ZUBRILOV SP AFANASEV AV
Citation: Ya. Grivnin et al., AN ANALYSIS OF STABILITY OF THE SURFACE O F A CLOSED CAVITATION CAVITY, Zurnal fiziceskoj himii, 69(11), 1995, pp. 2102-2104
THE DISTRIBUTION OF CAVITATION NUCLEI IN LIQUIDS
Authors: GRIVNIN YA ZUBRILOV AS ZUBRILOV SP AFANASEV AV
Citation: Ya. Grivnin et al., THE DISTRIBUTION OF CAVITATION NUCLEI IN LIQUIDS, Zurnal fiziceskoj himii, 69(11), 1995, pp. 2105-2108
SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC
Authors: ZUBRILOV AS NIKOLAEV VI TSVETKOV DV DMITRIEV VA IRVINE KG EDMOND JA CARTER CH
Citation: As. Zubrilov et al., SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC, Applied physics letters, 67(4), 1995, pp. 533-535
ALGAN PN JUNCTIONS
Authors: DMITRIEV VA IRVINE K CARTER CH ZUBRILOV AS TSVETKOV DV
Citation: Va. Dmitriev et al., ALGAN PN JUNCTIONS, Applied physics letters, 67(1), 1995, pp. 115-117
ELECTRICAL-PROPERTIES OF 3C-SIC SI HETEROJUNCTIONS/
Authors: ZUBRILOV AS
Citation: As. Zubrilov, ELECTRICAL-PROPERTIES OF 3C-SIC SI HETEROJUNCTIONS/, Semiconductors, 28(10), 1994, pp. 967-970
PICOSECOND TIME-RESOLVED REFLECTIVITY OF POROUS SILICON
Authors: BUGAYEV AA KHAKHAEV IA ZUBRILOV AS
Citation: Aa. Bugayev et al., PICOSECOND TIME-RESOLVED REFLECTIVITY OF POROUS SILICON, Optics communications, 106(1-3), 1994, pp. 65-68
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