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Results: 1-18 |
Results: 18
Epitaxial growth of praseodymium oxide on silicon
Authors: Osten, HJ Liu, JP Bugiel, E Mussig, HJ Zaumseil, P
Citation: Hj. Osten et al., Epitaxial growth of praseodymium oxide on silicon, MAT SCI E B, 87(3), 2001, pp. 297-302
Application of the phase-retrieval x-ray diffractometry to an ultra-high spatial resolution mapping of SiGe films near the absorption edge of Ge
Authors: Nikulin, AY Siu, K Davis, JR Zaumseil, P Souvorov, AY Freund, A
Citation: Ay. Nikulin et al., Application of the phase-retrieval x-ray diffractometry to an ultra-high spatial resolution mapping of SiGe films near the absorption edge of Ge, PHYS ST S-A, 184(1), 2001, pp. 145-155
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide
Authors: Osten, HJ Liu, JP Mussig, HJ Zaumseil, P
Citation: Hj. Osten et al., Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide, MICROEL REL, 41(7), 2001, pp. 991-994
Inline characterization of SiGe structures on 8 inch Si wafers using the Bede QC200 x-ray diffractometer
Authors: Zaumseil, P Lafford, TA Taylor, M
Citation: P. Zaumseil et al., Inline characterization of SiGe structures on 8 inch Si wafers using the Bede QC200 x-ray diffractometer, J PHYS D, 34(10A), 2001, pp. A52-A56
Low trap density nonleaky SiGe quantum well MOS structures - Fabrication and characteristics
Authors: Kar, S Zaumseil, P
Citation: S. Kar et P. Zaumseil, Low trap density nonleaky SiGe quantum well MOS structures - Fabrication and characteristics, J ELCHEM SO, 148(10), 2001, pp. G535-G542
Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal tocubic phase transition during postgrowth N-2 annealing
Authors: Liu, JP Zaumseil, P Bugiel, E Osten, HJ
Citation: Jp. Liu et al., Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal tocubic phase transition during postgrowth N-2 annealing, APPL PHYS L, 79(5), 2001, pp. 671-673
X-ray photoelectron spectroscopic studies of electrodeposited mercury cadmium telluride semiconductor thin films
Authors: Kumaresan, R Gopalakrishnan, R Babu, SM Ramasamy, P Kruger, D Zaumseil, P
Citation: R. Kumaresan et al., X-ray photoelectron spectroscopic studies of electrodeposited mercury cadmium telluride semiconductor thin films, J PHYS CH S, 61(5), 2000, pp. 765-771
Quality assessment of Bridgman-grown CdTe single crystals using double-crystal X-ray diffractometry (DCD) and synchrotron radiation
Authors: Kumaresan, R Gopalakrishnan, R Babu, SM Ramasamy, P Zaumseil, P Ichimura, M
Citation: R. Kumaresan et al., Quality assessment of Bridgman-grown CdTe single crystals using double-crystal X-ray diffractometry (DCD) and synchrotron radiation, J CRYST GR, 210(1-3), 2000, pp. 193-197
Optical constants and ellipsometric thickness determination of strained Si1-xGex : C layers on Si (100) and related heterostructures
Authors: Zollner, S Hildreth, J Liu, R Zaumseil, P Weidner, M Tillack, B
Citation: S. Zollner et al., Optical constants and ellipsometric thickness determination of strained Si1-xGex : C layers on Si (100) and related heterostructures, J APPL PHYS, 88(7), 2000, pp. 4102-4108
Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy
Authors: Edelman, F Raz, T Komem, Y Zaumseil, P Osten, HJ Capitan, M
Citation: F. Edelman et al., Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy, PHIL MAG A, 79(11), 1999, pp. 2617-2628
Characteristics of ultrathin [4-7 nm] gate oxides for SiGe quantum well MOS structures
Authors: Kar, S Zaumseil, P
Citation: S. Kar et P. Zaumseil, Characteristics of ultrathin [4-7 nm] gate oxides for SiGe quantum well MOS structures, MICROEL ENG, 48(1-4), 1999, pp. 83-86
Experimental verification of different slip generation models for 300 mm wafers processed in a fast ramp vertical furnace
Authors: Ritter, C McHugh, P Wilson, G Funk, L Zaumseil, P
Citation: C. Ritter et al., Experimental verification of different slip generation models for 300 mm wafers processed in a fast ramp vertical furnace, MICROEL ENG, 45(2-3), 1999, pp. 225-236
Stability and transport properties of microcrystalline Si1-xGex films
Authors: Edelman, F Raz, T Komem, Y Stolzer, M Werner, P Zaumseil, P Osten, HJ Griesche, J Capitan, M
Citation: F. Edelman et al., Stability and transport properties of microcrystalline Si1-xGex films, THIN SOL FI, 337(1-2), 1999, pp. 152-157
Phase-retrieval X-ray diffractometry in the case of high- or low-flux radiation source
Authors: Nikulin, AY Zaumseil, P
Citation: Ay. Nikulin et P. Zaumseil, Phase-retrieval X-ray diffractometry in the case of high- or low-flux radiation source, PHYS ST S-A, 172(2), 1999, pp. 291-301
Determination of germanium content and relaxation in Si1-xGex/Si layers byRaman spectroscopy and X-ray diffractometry
Authors: Bhagavannarayana, G Dietrich, B Zaumseil, P Dombrowski, KF
Citation: G. Bhagavannarayana et al., Determination of germanium content and relaxation in Si1-xGex/Si layers byRaman spectroscopy and X-ray diffractometry, PHYS ST S-A, 172(2), 1999, pp. 425-432
The influence of substitutional carbon on the Si Ge interdiffusion studiedby x-ray diffractometry at superlattice structures
Authors: Zaumseil, P
Citation: P. Zaumseil, The influence of substitutional carbon on the Si Ge interdiffusion studiedby x-ray diffractometry at superlattice structures, J PHYS D, 32(10A), 1999, pp. A75-A80
Behavior of strained Si1-yCy (0 <= y <= 0.02) layers grown on silicon during wet oxidation
Authors: Garrido, B Morante, JR Franz, M Pressel, K Kruger, D Zaumseil, P Osten, HJ
Citation: B. Garrido et al., Behavior of strained Si1-yCy (0 <= y <= 0.02) layers grown on silicon during wet oxidation, J APPL PHYS, 85(2), 1999, pp. 833-840
X-ray phase-amplitude contrast mapping of single-crystal alloys near the absorption edge of the alloy impurity
Authors: Nikulin, AY Davis, JR Jones, NT Zaumseil, P
Citation: Ay. Nikulin et al., X-ray phase-amplitude contrast mapping of single-crystal alloys near the absorption edge of the alloy impurity, J APPL PHYS, 84(9), 1998, pp. 4815-4821
Risultati: 1-18 |