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Results: 1-11 |
Results: 11
Fabrication of ATLAS pixel detector prototypes at IRST
Authors: Boscardin, M Dalla Betta, GF Gregori, P Zen, M Zorzi, N
Citation: M. Boscardin et al., Fabrication of ATLAS pixel detector prototypes at IRST, NUCL INST A, 465(1), 2001, pp. 83-87
Development of ALICE microstrip detectors at IRST
Authors: Boscardin, M Bosisio, L Dalla Betta, GF Gregori, P Rachevskaia, I Zorzi, N
Citation: M. Boscardin et al., Development of ALICE microstrip detectors at IRST, NUCL INST A, 461(1-3), 2001, pp. 188-191
Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors
Authors: Dalla Betta, GF Boscardin, M Bosisio, L Rachevskaia, I Zen, M Zorzi, N
Citation: Gf. Dalla Betta et al., Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors, NUCL INST A, 460(2-3), 2001, pp. 306-315
High electric field induced positive charges in thin gate oxide
Authors: Bellutti, P Zorzi, N
Citation: P. Bellutti et N. Zorzi, High electric field induced positive charges in thin gate oxide, SOL ST ELEC, 45(8), 2001, pp. 1333-1338
EEA1, a tethering protein of the early sorting endosome, shows a polarizeddistribution in hippocampal neurons, epithelial cells, and fibroblasts
Authors: Wilson, JM de Hoop, M Zorzi, N Toh, BH Dotti, CG Parton, RG
Citation: Jm. Wilson et al., EEA1, a tethering protein of the early sorting endosome, shows a polarizeddistribution in hippocampal neurons, epithelial cells, and fibroblasts, MOL BIOL CE, 11(8), 2000, pp. 2657-2671
The effect of stress polarity on positive charging in thin gate oxide
Authors: Bellutti, P Eccel, L Zorzi, N
Citation: P. Bellutti et al., The effect of stress polarity on positive charging in thin gate oxide, MICROEL REL, 40(4-5), 2000, pp. 747-750
On the better quality of wet-grown gate oxides
Authors: Bellutti, P Zorzi, N
Citation: P. Bellutti et N. Zorzi, On the better quality of wet-grown gate oxides, EL SOLID ST, 2(10), 1999, pp. 525-526
Feasibility study for double-sided silicon microstrip detector fabricationat IRST
Authors: Dalla Betta, GF Boscardin, M Bosisio, L Carmel-Barnea, N Ferrario, L Pignatel, GU Rachevskaia, I Zen, M Zorzi, N
Citation: Gf. Dalla Betta et al., Feasibility study for double-sided silicon microstrip detector fabricationat IRST, NUCL INST A, 431(1-2), 1999, pp. 83-91
Gate oxide reliability improvement related to dry local oxidation of silicon
Authors: Bellutti, P Zorzi, N Verzellesi, G
Citation: P. Bellutti et al., Gate oxide reliability improvement related to dry local oxidation of silicon, MICROEL REL, 39(2), 1999, pp. 181-185
An all-implanted p-channel Si JFET fully compatible with CMOS technology
Authors: Dalla Betta, GF Bellutti, P Boscardin, M Ferrario, L Soncini, G Zorzi, N
Citation: Gf. Dalla Betta et al., An all-implanted p-channel Si JFET fully compatible with CMOS technology, MICROELEC J, 30(3), 1999, pp. 281-285
Molecular characterization of caveolin association with the Golgi complex:Identification of a cis-Golgi targeting domain in the caveolin molecule
Authors: Luetterforst, R Stang, E Zorzi, N Carozzi, A Way, M Parton, RG
Citation: R. Luetterforst et al., Molecular characterization of caveolin association with the Golgi complex:Identification of a cis-Golgi targeting domain in the caveolin molecule, J CELL BIOL, 145(7), 1999, pp. 1443-1459
Risultati: 1-11 |